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1.发明公开公开(公告)号：US20240353749A1
公开(公告)日：2024-10-24
申请号：US18713143
申请日：2022-11-23
发明人： Xingyue PENG , Ningning JIA , Zhan SHI , Rafael C. HOWELL
IPC分类号： G03F1/36
CPC分类号： G03F1/36
摘要： Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern including sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization be performed with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.
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公开(公告)号：US20150378262A1
公开(公告)日：2015-12-31
申请号：US14766703
申请日：2014-02-04
发明人： Xiaofeng LIU , Rafael C. HOWELL
IPC分类号： G03F7/20
CPC分类号： G03F7/2008 , G03F7/70116 , G03F7/70125 , G03F7/705 , G03F7/70508
摘要： A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: calculating a discrete pupil profile based on a desired pupil profile; selecting a discrete change to the discrete pupil profile; and applying the selected discrete change to the discrete pupil profile. The methods according to various embodiments disclosed herein may reduce the computational cost of discrete optimization from O(an) to O(n) wherein a is constant and n is the number of knobs that can generate discrete change in the pupil profile.
摘要翻译： 一种用于改进用于使用光刻投影装置将设计布局的一部分成像到基板上的光刻处理的方法，所述方法包括：基于所需的瞳孔轮廓来计算离散瞳孔轮廓; 选择离散瞳孔轮廓的离散变化; 以及将所选择的离散变化应用于离散光瞳轮廓。 根据本文公开的各种实施例的方法可以将离散优化的计算成本从O（a）减小到O（n），其中a是常数，n是可以在瞳孔轮廓中产生离散变化的旋钮的数量。
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公开(公告)号：US20240241436A1
公开(公告)日：2024-07-18
申请号：US18289384
申请日：2022-05-10
发明人： Xingyue PENG , Rafael C. HOWELL , Yen Wen LU , Xiaorui CHEN
摘要： Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.
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4.发明申请公开(公告)号：US20200073260A1
公开(公告)日：2020-03-05
申请号：US16467124
申请日：2017-12-06
发明人： Yu CAO , Yen-Wen LU , Peng LIU , Rafael C. HOWELL
IPC分类号： G03F7/20
摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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5.发明申请公开(公告)号：US20220229374A1
公开(公告)日：2022-07-21
申请号：US17605358
申请日：2020-03-26
IPC分类号： G03F7/20
摘要： Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.
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公开(公告)号：US20210271173A1
公开(公告)日：2021-09-02
申请号：US17326481
申请日：2021-05-21
发明人： Yu CAO , Yen-Wen LU , Peng LIU , Rafael C. HOWELL , Roshni BISWAS
IPC分类号： G03F7/20
摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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公开(公告)号：US20200380362A1
公开(公告)日：2020-12-03
申请号：US16970648
申请日：2019-02-20
发明人： Yu CAO , Ya LUO , Yen-Wen LU , Been-Der CHEN , Rafael C. HOWELL , Yi ZOU , Jing SU , Dezheng SUN
摘要： Methods of training machine learning models related to a patterning process, including a method for training a machine learning model configured to predict a mask pattern. The method including obtaining (i) a process model of a patterning process configured to predict a pattern on a substrate, wherein the process model comprises one or more trained machine learning models, and (ii) a target pattern, and training the machine learning model configured to predict a mask pattern based on the process model and a cost function that determines a difference between the predicted pattern and the target pattern.
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公开(公告)号：US20210364929A1
公开(公告)日：2021-11-25
申请号：US16973377
申请日：2019-06-21
发明人： Duan-Fu Stephen HSU , Christoph Rene Konrad Cebulla HENNERKES , Rafael C. HOWELL , Zhan SHI , Xiaoyang Jason LI , Frank STAALS
IPC分类号： G03F7/20
摘要： A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
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公开(公告)号：US20180341186A1
公开(公告)日：2018-11-29
申请号：US16036732
申请日：2018-07-16
摘要： A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.
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10.发明申请公开(公告)号：US20180120709A1
公开(公告)日：2018-05-03
申请号：US15567606
申请日：2016-05-13
CPC分类号： G03F7/705 , G03F7/70125 , G06F17/5036 , G06F2217/12
摘要： A method including: determining a first simulated partial image formed, by a lithographic projection apparatus, from a first radiation portion propagating along a first group of one or more directions; determining a second simulated partial image formed, by the lithographic projection apparatus, from a second radiation portion propagating along a second group of one or more directions; and determining an image by incoherently adding the first partial image and the second partial image, wherein the first group of one or more directions and the second group of one or more directions are different.
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