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    UV CURING OF PECVD-DEPOSITED SACRIFICIAL POLYMER FILMS FOR AIR-GAP ILD
    1.
    发明申请
    UV CURING OF PECVD-DEPOSITED SACRIFICIAL POLYMER FILMS FOR AIR-GAP ILD 审中-公开
    PECVD沉积的空气间隙ILD聚合物薄膜的紫外线固化

    公开(公告)号：US20080182403A1

    公开(公告)日：2008-07-31

    申请号：US12017879

    申请日：2008-01-22

    申请人： ATIF NOORI ,  Francimar Schmitt ,  Annamalai Lakshmanan ,  Bok Hoen Kim ,  Reza Arghavani

    发明人： ATIF NOORI ,  Francimar Schmitt ,  Annamalai Lakshmanan ,  Bok Hoen Kim ,  Reza Arghavani

    IPC分类号： H01L21/768

    CPC分类号： H01L21/7682 ,  H01L21/76885 ,  H01L2221/1036

    摘要： Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a sacrificial material between the respective conductive elements, depositing a porous layer over the conductive elements and the sacrificial material, and then stripping the sacrificial material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The sacrificial material may be, for example, a polymerized alpha terpinene layer, the porous layer may be, for example, a porous carbon doped oxide layer, and the stripping process may utilize a UV based curing process, for example.

    摘要翻译： 本发明的实施例通常提供了在半导体器件的导电元件之间形成空气间隙的方法，其中气隙的介电常数约为1.气隙通常可以通过在相应的导电元件之间沉积牺牲材料而形成 在导电元件和牺牲材料之上沉积多孔层，然后通过多孔层将牺牲材料从相应的导电元件之间的空间中剥离，该多孔层留下各导电元件之间的气隙。 牺牲材料可以是例如聚合的α萜品烯层，多孔层可以是例如多孔碳掺杂的氧化物层，并且剥离过程可以使用例如基于UV的固化方法。

    Situ oxide cap layer development
    7.
    发明授权
    Situ oxide cap layer development 有权
    原位氧化盖层开发

    公开(公告)号：US07273823B2

    公开(公告)日：2007-09-25

    申请号：US11145432

    申请日：2005-06-03

    申请人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Hoen Kim ,  Ganesh Balasubramanian

    发明人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Hoen Kim ,  Ganesh Balasubramanian

    IPC分类号： H01L21/31 ,  H01L21/409

    CPC分类号： H01L21/31612 ,  C23C16/30 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

    摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.

    摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在低频RF功率的存在下，由包括有机硅化合物和氧化气体的气体混合物沉积低介电常数膜。 在低介电常数膜的沉积之后，低频RF功率被终止。 在不存在来自包括有机硅化合物和用于沉积低介电常数膜的氧化气体的另一气体混合物的低频RF功率的情况下，在低介电常数膜上沉积富氧帽。

    In situ oxide cap layer development
    10.
    发明申请
    In situ oxide cap layer development 有权
    原位氧化盖层开发

    公开(公告)号：US20060276054A1

    公开(公告)日：2006-12-07

    申请号：US11145432

    申请日：2005-06-03

    申请人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Kim ,  Ganesh Balasubramanian

    发明人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Kim ,  Ganesh Balasubramanian

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31612 ,  C23C16/30 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

    摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.

    摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在低频RF功率的存在下，由包括有机硅化合物和氧化气体的气体混合物沉积低介电常数膜。 在低介电常数膜的沉积之后，低频RF功率被终止。 在不存在来自包括有机硅化合物和用于沉积低介电常数膜的氧化气体的另一气体混合物的低频RF功率的情况下，在低介电常数膜上沉积富氧帽。