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    CHEMISTRY AND COMPOSITIONS FOR MANUFACTURING INTEGRATED CIRCUITS
    1.
    发明申请
    CHEMISTRY AND COMPOSITIONS FOR MANUFACTURING INTEGRATED CIRCUITS 有权
    用于制造集成电路的化学和组合物

    公开(公告)号：US20090093125A1

    公开(公告)日：2009-04-09

    申请号：US11869407

    申请日：2007-10-09

    申请人： Aaron Wilson ,  Mark Kiehlbauch

    发明人： Aaron Wilson ,  Mark Kiehlbauch

    IPC分类号： H01L21/461

    CPC分类号： C09K13/00 ,  H01L21/31122

    摘要： In the manufacture of integrated circuits, reactive compositions that include a reactive etchant species and an oxygen-containing species can provide selective removal of target material and can reduce contamination of gas delivery lines.

    摘要翻译： 在集成电路的制造中，包括反应性蚀刻剂物质和含氧物质的反应性组合物可以提供目标材料的选择性去除并且可以减少气体输送管线的污染。

    Chemistry and compositions for manufacturing integrated circuits
    2.
    发明授权
    Chemistry and compositions for manufacturing integrated circuits 有权
    用于制造集成电路的化学和组成

    公开(公告)号：US08759228B2

    公开(公告)日：2014-06-24

    申请号：US11869407

    申请日：2007-10-09

    申请人： Aaron Wilson ,  Mark Kiehlbauch

    发明人： Aaron Wilson ,  Mark Kiehlbauch

    IPC分类号： H01L21/461

    CPC分类号： C09K13/00 ,  H01L21/31122

    摘要： In the manufacture of integrated circuits, reactive compositions that include a reactive etchant species and an oxygen-containing species can provide selective removal of target material and can reduce contamination of gas delivery lines.

    摘要翻译： 在集成电路的制造中，包括反应性蚀刻剂物质和含氧物质的反应性组合物可以提供目标材料的选择性去除并且可以减少气体输送管线的污染。

    Using positive DC offset of bias RF to neutralize charge build-up of etch features
    3.
    发明申请
    Using positive DC offset of bias RF to neutralize charge build-up of etch features 有权
    使用偏置RF的正直流偏移来中和蚀刻特征的电荷积聚

    公开(公告)号：US20070193975A1

    公开(公告)日：2007-08-23

    申请号：US11362409

    申请日：2006-02-23

    申请人： Aaron Wilson

    发明人： Aaron Wilson

    IPC分类号： G01L21/30 ,  C23F1/00

    CPC分类号： H01L21/3065 ,  H01J37/32706 ,  H01L21/6833 ,  H02N13/00

    摘要： Apparatus, systems and methods for plasma etching substrates are provided. The invention achieves dissipation of charge build-up on a substrate being plasma etched to avoid notching or twisting in high aspect ratio contents and similar features. Charge build-up on a substrate being etched by plasma etching can be dissipated by a method for etching a substrate, the method comprising: providing a plasma processing chamber comprising a chamber enclosure and a substrate support adapted to support a substrate within the chamber enclosure; supporting a substrate on the substrate support; forming a plasma within the chamber enclosure such that a surface of the substrate is in contact with the plasma; etching the substrate by generating a negative bias on the substrate surface relative to the plasma; and intermittently changing the bias on the substrate surface to positive relative to the plasma. The present method can be readily integrated into known plasma processing systems.

    摘要翻译： 提供了用于等离子体蚀刻基板的装置，系统和方法。 本发明实现在等离子体蚀刻的衬底上的电荷积聚的消散，以避免在高纵横比内容和类似特征中的开槽或扭曲。 通过等离子体蚀刻蚀刻的衬底上的电荷积聚可以通过用于蚀刻衬底的方法来消散，该方法包括：提供等离子体处理室，其包括适于支撑腔室外壳内的衬底的腔室封壳和衬底支撑件; 支撑衬底支撑上的衬底; 在所述室外壳内形成等离子体，使得所述基板的表面与所述等离子体接触; 通过在衬底表面上相对于等离子体产生负偏压来蚀刻衬底; 并且间歇性地将衬底表面上的偏压相对于等离子体改变为正。 本方法可以容易地集成到已知的等离子体处理系统中。

    Methods of etching features into substrates
    4.
    发明申请
    Methods of etching features into substrates 有权
    将特征蚀刻到基底中的方法

    公开(公告)号：US20070020936A1

    公开(公告)日：2007-01-25

    申请号：US11185229

    申请日：2005-07-19

    申请人： Mirzafer Abatchev ,  Gurtej Sandhu ,  Aaron Wilson ,  Tony Schrock

    发明人： Mirzafer Abatchev ,  Gurtej Sandhu ,  Aaron Wilson ,  Tony Schrock

    IPC分类号： C23F1/00 ,  H01L21/302

    CPC分类号： H01L21/3081 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/906 ,  Y10S438/945

    摘要： The invention includes methods of etching features into substrates. A plurality of hard mask layers is formed over material of a substrate to be etched. A feature pattern is formed in such layers. A feature is etched only partially into the substrate material using the hard mask layers with the feature pattern therein as a mask. After the partial etching, at least one of the hard mask layers is etched selectively relative to the substrate material and remaining of the hard mask layers. After etching at least one of the hard mask layers, the feature is further etched into the substrate material using at least an innermost of the hard mask layers as a mask. After the further etching, the innermost hard mask layer and any hard mask layers remaining thereover are removed from the substrate, and at least a portion of the feature is incorporated into an integrated circuit.

    摘要翻译： 本发明包括将特征蚀刻到基底中的方法。 在待蚀刻的基板的材料上形成多个硬掩模层。 在这样的层中形成特征图案。 使用其中具有特征图案的硬掩模层作为掩模，将特征部分地蚀刻到基底材料中。 在部分蚀刻之后，相对于衬底材料选择性蚀刻至少一个硬掩模层，并保留硬掩模层。 在蚀刻至少一个硬掩模层之后，使用至少最内侧的硬掩模层作为掩模将特征进一步蚀刻到基底材料中。 在进一步蚀刻之后，从衬底去除最内层的硬掩模层和剩余的硬掩模层，并且将特征的至少一部分结合到集成电路中。

    High aspect ratio contacts
    5.
    发明申请
    High aspect ratio contacts 有权
    高宽比接触

    公开(公告)号：US20070197033A1

    公开(公告)日：2007-08-23

    申请号：US11358659

    申请日：2006-02-21

    申请人： Aaron Wilson

    发明人： Aaron Wilson

    IPC分类号： C23F1/00 ,  H01L21/302

    CPC分类号： H01L21/31116 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/31138

    摘要： A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch reactor, and exposing the insulating layer to a plasma of the first gaseous etchant. Use of the first gaseous etchant reduces the occurrence of twisting in openings in insulating layers having an aspect ratio of at least 15:1.

    摘要翻译： 通过向等离子体蚀刻反应器提供具有至少五十（50）％的He的第一气态蚀刻剂，并且将绝缘层暴露于等离子体中，蚀刻绝缘层以产生纵横比为至少15:1的开口的方法 的第一种气体蚀刻剂。 使用第一种气体蚀刻剂减少了具有至少15:1的纵横比的绝缘层中的开口扭曲的发生。

    Human methionine synthase reductase: cloning, and methods for evaluating risk of, preventing, or treating neural tube defects, cardiovascular disease, cancer, and down's syndrome
    6.
    发明授权
    Human methionine synthase reductase: cloning, and methods for evaluating risk of, preventing, or treating neural tube defects, cardiovascular disease, cancer, and down's syndrome 失效
    人甲硫氨酸合成酶还原酶：克隆和评估神经管缺陷，心血管疾病，癌症和衰老综合征的风险，预防或治疗的方法

    公开(公告)号：US07063944B1

    公开(公告)日：2006-06-20

    申请号：US09487841

    申请日：2000-01-19

    申请人： Roy A. Gravel ,  Rima Rozen ,  Daniel Leclerc ,  Aaron Wilson ,  David Rosenblatt

    发明人： Roy A. Gravel ,  Rima Rozen ,  Daniel Leclerc ,  Aaron Wilson ,  David Rosenblatt

    IPC分类号： C12Q1/68 ,  C12Q1/00 ,  C12P19/34 ,  C07H21/04

    CPC分类号： C12N9/1007

    摘要： The invention features a novel gene encoding methionine synthase reductase. The invention also features a method for detecting an increased likelihood of hyperhomocysteinemia and, in turn, an increased or decreased likelihood of neural tube defects, cardiovascular disease, Down's Syndrome or cancer. The invention also features therapeutic methods for treating and/or reducing the risk of cardiovascular disease, Down's Syndrome, cancer, or neural tube defects. Also provided are the sequences of the human methionine synthase reductase gene and protein and compounds and kits for performing the methods of the invention.

    摘要翻译： 本发明的特征在于一种编码甲硫氨酸合成酶还原酶的新基因。 本发明还特征在于一种用于检测高半胱氨酸血症的可能性增加的方法，反过来，增加或减少了神经管缺陷，心血管疾病，唐氏综合征或癌症的可能性。 本发明还具有用于治疗和/或降低心血管疾病唐氏综合征，癌症或神经管缺陷风险的治疗方法。 还提供了人甲硫氨酸合酶还原酶基因和蛋白质的序列，以及用于实施本发明方法的化合物和试剂盒。

    METHODS OF FORMING A CAPACITORS -
    8.
    发明申请
    METHODS OF FORMING A CAPACITORS - 有权
    形成电容器的方法

    公开(公告)号：US20060024904A1

    公开(公告)日：2006-02-02

    申请号：US11209082

    申请日：2005-08-22

    申请人： Aaron Wilson

    发明人： Aaron Wilson

    IPC分类号： H01L21/20 ,  H01L21/461

    CPC分类号： H01L27/1085 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10852 ,  H01L28/90

    摘要： A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0.20 micron. The container openings respectively have at least three peripheral corner areas which are each rounded. The container forming layer is plasma etched through the masking layer openings. In one implementation, such plasma etching uses conditions effective to both a) etch the masking layer to modify shape of the masking layer openings by at least reducing degree of roundness of the at least three corners in the masking layer, and b) form container openings in the container forming layer of the modified shapes. Capacitors comprising container shapes are formed using the container openings in the container forming layer. Other implementations and aspects are disclosed.

    摘要翻译： 含碳掩蔽层被图案化以包括其中具有小于或等于0.20微米的最小特征尺寸的多个容器开口。 容器开口分别具有至少三个周边角区域，每个周边角部分均为圆形。 容器形成层通过掩模层开口进行等离子体蚀刻。 在一个实施方案中，这种等离子体蚀刻使用有效的条件，a）蚀刻掩模层以通过至少减少掩模层中的至少三个角的圆度来修改掩模层开口的形状，以及b）形成容器开口 在容器形成层中形成改性的形状。 使用容器形成层中的容器开口形成包含容器形状的电容器。 公开了其他实现和方面。

    Human methionine synthase reductase: cloning, and methods for evaluating risk of neural tube deffects, cardiovascular disease, cancer and Down's Syndrome
    9.
    发明申请
    Human methionine synthase reductase: cloning, and methods for evaluating risk of neural tube deffects, cardiovascular disease, cancer and Down's Syndrome 审中-公开
    人甲硫氨酸合成酶还原酶：克隆和评估神经管的影响，心血管疾病，癌症和唐氏综合征风险的方法

    公开(公告)号：US20050191701A1

    公开(公告)日：2005-09-01

    申请号：US11119096

    申请日：2005-04-29

    申请人： Roy Gravel ,  Rima Rozen ,  Daniel Leclerc ,  Aaron Wilson ,  David Rosenblatt

    发明人： Roy Gravel ,  Rima Rozen ,  Daniel Leclerc ,  Aaron Wilson ,  David Rosenblatt

    IPC分类号： B60J7/10 ,  C12N9/10 ,  C12Q1/68

    CPC分类号： C12N9/1007

    摘要： The invention features a novel gene encoding methionine synthase reductase. The invention also features a method for detecting an increased likelihood of hyperhomocysteinemia and, in turn, an increased or decreased likelihood of neural tube defects, cardiovascular disease, Down's Syndrome or cancer. The invention also features therapeutic methods for treating and/or reducing the risk of cardiovascular disease, Down's Syndrome, cancer, or neural tube defects. Also provided are the sequences of the human methionine synthase reductase gene and protein and compounds and kits for performing the methods of the invention.

    摘要翻译： 本发明的特征在于一种编码甲硫氨酸合成酶还原酶的新基因。 本发明还特征在于一种用于检测高半胱氨酸血症的可能性增加的方法，反过来，增加或减少了神经管缺陷，心血管疾病，唐氏综合征或癌症的可能性。 本发明还具有用于治疗和/或降低心血管疾病唐氏综合征，癌症或神经管缺陷风险的治疗方法。 还提供了人甲硫氨酸合酶还原酶基因和蛋白质的序列，以及用于实施本发明方法的化合物和试剂盒。

    System for correcting transducer tangential skew in a disk drive system having two actuators
    10.
    发明授权
    System for correcting transducer tangential skew in a disk drive system having two actuators 失效
    用于校正具有两个致动器的磁盘驱动器系统中的换能器切向偏斜的系统

    公开(公告)号：US5523901A

    公开(公告)日：1996-06-04

    申请号：US287462

    申请日：1994-08-08

    申请人： Kurt Anderson ,  Aaron Wilson

    发明人： Kurt Anderson ,  Aaron Wilson

    IPC分类号： G11B5/596 ,  G11B21/08

    CPC分类号： G11B5/59616 ,  G11B5/5578

    摘要： In a disk drive system having two actuators, each said actuator having a plurality of transducers, said system employing a transducer switching procedure for switching between a first presently selected transducer and a second to be selected transducer, an apparatus, associated with the nonpackwriting actuator, for controlling the sensing of an address mark by said second transducer, said apparatus comprising an address mark means for generating an address mark search signal to start an address mark search when an address mark is expected to be read by said first transducers; and an adjusting means connected to said address mark means for altering the time when said address mark means will generate said address mark search signal such that said second transducer will read the next address mark to occur on the track being read by said second transducer after said second transducer is selected.

    摘要翻译： 在具有两个致动器的磁盘驱动器系统中，每个所述致动器具有多个换能器，所述系统采用用于在第一当前选择的换能器和第二待选换能器之间切换的换能器切换程序，与非包装式致动器相关联的装置， 用于控制所述第二换能器对地址标记的感测，所述装置包括地址标记装置，用于当希望所述第一换能器读取地址标记时，产生地址标记搜索信号以开始地址标记搜索; 以及调节装置，连接到所述地址标记装置，用于改变所述地址标记装置将产生所述地址标记搜索信号的时间，使得所述第二传感器将在所述第二传感器读出所述第二传感器之后读取在所述第二传感器所读取的轨道上发生的下一个地址标记 选择第二传感器。