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    Microcombustor and combustion-based thermoelectric microgenerator
    1.
    发明授权
    Microcombustor and combustion-based thermoelectric microgenerator 失效
    微型燃烧器和燃烧型热电微发电机

    公开(公告)号：US06613972B2

    公开(公告)日：2003-09-02

    申请号：US09755985

    申请日：2001-01-05

    申请人： Adam L. Cohen ,  Paul Ronney ,  Uri Frodis ,  Lars Sitzki ,  Eckart Meiburg ,  Steffen Wussow

    发明人： Adam L. Cohen ,  Paul Ronney ,  Uri Frodis ,  Lars Sitzki ,  Eckart Meiburg ,  Steffen Wussow

    IPC分类号： H01L3528

    CPC分类号： F28D9/04 ,  F23C3/00 ,  F23C2900/03001 ,  F23M2900/13003 ,  F28F2260/02 ,  H01L35/00 ,  H01L35/30 ,  Y10T428/31504

    摘要： A generally toroidal counterflow heat exchanger is the main element of a combustor that operates at a micro scale. The combustor includes a central combustion region with openings to a reactant gas channel and an exhaust gas channel. The reactant channel and exhaust channels are coiled around each other in a spiral configuration that reduces heat loss. An electric current microgenerator is similar and also includes a thermoelectric active wall composed of n-type and p-type thermoelectric elements as part of a channel wall of the microcombustor. The thermoelectric active wall includes fins configured to increase the temperature differential across the thermoelectric elements relative to the temperature difference between the thermoelectric elements and the reactant and exhaust gases. A method of monolithically fabricating such microdevices by electrodepositing multiple layers of material is also provided.

    摘要翻译： 大致环形逆流热交换器是以微观尺度工作的燃烧器的主要元件。 燃烧器包括具有到反应气体通道和排气通道的开口的中心燃烧区域。 反应物通道和排气通道以螺旋构造彼此卷绕，从而减少热损失。 电流微型发电机是类似的，并且还包括由作为微型燃烧器的通道壁的一部分的n型和p型热电元件组成的热电活性壁。 热电活性壁包括翅片，其构造成相对于热电元件和反应物和废气之间的温差增加跨热电元件的温差。 还提供了通过电沉积多层材料来整体地制造这种微器件的方法。

    Microcombustor and combustion-based thermoelectric microgenerator
    3.
    发明授权
    Microcombustor and combustion-based thermoelectric microgenerator 失效
    微型燃烧器和燃烧型热电微发电机

    公开(公告)号：US06951456B2

    公开(公告)日：2005-10-04

    申请号：US10630513

    申请日：2003-07-29

    申请人： Adam L. Cohen ,  Paul D. Ronney ,  Uri Frodis ,  Lars Sitzki ,  Eckart H. Meiburg ,  Steffen Wussow

    发明人： Adam L. Cohen ,  Paul D. Ronney ,  Uri Frodis ,  Lars Sitzki ,  Eckart H. Meiburg ,  Steffen Wussow

    IPC分类号： F23D14/66 ,  F28D9/04 ,  H01L35/00 ,  H01L35/16 ,  H01L35/30 ,  H01L35/32 ,  H02N11/00 ,  F23D14/02

    CPC分类号： F28D9/04 ,  F23C3/00 ,  F23C2900/03001 ,  F23M2900/13003 ,  F28F2260/02 ,  H01L35/00 ,  H01L35/30 ,  Y10T428/31504

    摘要： A generally toroidal counterflow heat exchanger is the main element of a combustor that operates at a micro scale. The combustor includes a central combustion region with openings to a reactant gas channel and an exhaust gas channel. The reactant channel and exhaust channels are coiled around each other in a spiral configuration that reduces heat loss. An electric current microgenerator is similar and also includes a thermoelectric active wall composed of n-type and p-type thermoelectric elements as part of a channel wall of the microcombustor. The thermoelectric active wall includes fins configured to increase the temperature differential across the thermoelectric elements relative to the temperature difference between the thermoelectric elements and the reactant and exhaust gases. A method of monolithically fabricating such microdevices by electrodepositing multiple layers of material is also provided.

    摘要翻译： 大致环形逆流热交换器是以微观尺度工作的燃烧器的主要元件。 燃烧器包括具有到反应气体通道和排气通道的开口的中心燃烧区域。 反应物通道和排气通道以螺旋构造彼此卷绕，从而减少热损失。 电流微发电机是类似的，并且还包括由作为微型燃烧器的通道壁的一部分的n型和p型热电元件组成的热电活性壁。 热电活性壁包括翅片，其构造成相对于热电元件和反应物和废气之间的温差增加跨热电元件的温差。 还提供了通过电沉积多层材料来整体地制造这种微器件的方法。

    Methods of forming three-dimensional structures having reduced stress and/or curvature
    4.
    发明授权
    Methods of forming three-dimensional structures having reduced stress and/or curvature 有权
    形成具有减小的应力和/或曲率的三维结构的方法

    公开(公告)号：US08808800B2

    公开(公告)日：2014-08-19

    申请号：US13409950

    申请日：2012-03-01

    申请人： Ananda H. Kumar ,  Jorge Sotelo Albarran ,  Adam L. Cohen ,  Kieun Kim ,  Michael S. Lockard ,  Uri Frodis ,  Dennis R. Smalley

    发明人： Ananda H. Kumar ,  Jorge Sotelo Albarran ,  Adam L. Cohen ,  Kieun Kim ,  Michael S. Lockard ,  Uri Frodis ,  Dennis R. Smalley

    IPC分类号： B05D3/00

    CPC分类号： B81C1/00666 ,  C25D5/022

    摘要： Electrochemical fabrication processes and apparatus for producing single layer or multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers includes operations for reducing stress and/or curvature distortion when the structure is released from a sacrificial material which surrounded it during formation and possibly when released from a substrate on which it was formed. Six primary groups of embodiments are presented which are divide into eleven primary embodiments. Some embodiments attempt to remove stress to minimize distortion while others attempt to balance stress to minimize distortion.

    摘要翻译： 用于生产单层或多层结构的电化学制造方法和装置，其中每个层包括至少两种材料的沉积，并且其中形成至少一些层包括当结构被释放时减少应力和/或曲率失真的操作 牺牲材料，其在形成期间包围它，并且可能当从其形成的基底释放时。 呈现了六个主要实施例的组，它们分为十一个主要实施例。 一些实施例尝试去除应力以最小化失真，而另一些实施例试图平衡应力以最小化失真。

    Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates
    6.
    发明授权
    Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 有权
    电介质材料和/或使用电介质基片的电化学制造方法

    公开(公告)号：US07517462B2

    公开(公告)日：2009-04-14

    申请号：US11029014

    申请日：2005-01-03

    申请人： Adam L. Cohen ,  Michael S. Lockard ,  Kieun Kim ,  Qui T. Le ,  Gang Zhang ,  Uri Frodis ,  Dale S. McPherson ,  Dennis R. Smalley

    发明人： Adam L. Cohen ,  Michael S. Lockard ,  Kieun Kim ,  Qui T. Le ,  Gang Zhang ,  Uri Frodis ,  Dale S. McPherson ,  Dennis R. Smalley

    IPC分类号： B81C1/00

    CPC分类号： B44C1/22 ,  B33Y10/00 ,  B81C1/00492 ,  C03C15/00 ,  C03C25/68 ,  C23C18/1605 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/405 ,  C23F1/00 ,  C25D1/003 ,  C25D5/02 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/76885

    摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

    摘要翻译： 本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。 某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。 一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。 一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。 一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。 其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。

    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material
    9.
    发明申请
    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material 审中-公开
    用于生产多层结构的电化学制造方法包括在材料沉积物平面化中使用金刚石加工

    公开(公告)号：US20090020433A1

    公开(公告)日：2009-01-22

    申请号：US12121625

    申请日：2008-05-15

    申请人： Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    发明人： Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    IPC分类号： C25D5/48

    CPC分类号： C25D1/003 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D5/02 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885

    摘要： Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

    摘要翻译： 公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。 一些实施例着重于在使用金刚石加工来平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以加工材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积 到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构 而不是结构材料的宽固体区域。

    Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates
    10.
    发明申请
    Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates 审中-公开
    电介质材料和/或使用介质基片的电化学制造方法

    公开(公告)号：US20080121343A1

    公开(公告)日：2008-05-29

    申请号：US12015374

    申请日：2008-01-16

    申请人： Adam L. Cohen ,  Michael S. Lockard ,  Kieun Kim ,  Qui T. Le ,  Gang Zhang ,  Uri Frodis ,  Dale S. McPherson ,  Dennis R. Smalley

    发明人： Adam L. Cohen ,  Michael S. Lockard ,  Kieun Kim ,  Qui T. Le ,  Gang Zhang ,  Uri Frodis ,  Dale S. McPherson ,  Dennis R. Smalley

    IPC分类号： B32B38/10

    CPC分类号： C25D5/022 ,  B81C1/00126 ,  B81C2201/0109 ,  B81C2201/019 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  Y10T156/11 ,  Y10T156/19

    摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

    摘要翻译： 本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。 某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。 一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。 一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。 一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。 其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。