摘要:
An integrated circuit including a first gate stack and a second gate stack and a method of manufacturing is disclosed. One embodiment provides non-volatile memory cells including a first gate stack and a gate dielectric on a first surface section of a main surface of a semiconductor substrate, and a second gate stack including a memory layer stack on a second surface section. A first pattern is transferred into the first gate stack and a second pattern into the second gate stack.
摘要:
An integrated circuit including a first gate stack and a second gate stack and a method of manufacturing is disclosed. One embodiment provides non-volatile memory cells including a first gate stack and a gate dielectric on a first surface section of a main surface of a semiconductor substrate, and a second gate stack including a memory layer stack on a second surface section. A first pattern is transferred into the first gate stack and a second pattern into the second gate stack.
摘要:
In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a substrate, a fin structure disposed above the substrate, and a memory cell contacting region. The fin structure may include a memory cell region having a plurality of memory cell structures being disposed above one another, each memory cell structure having an active region of a respective memory cell. Furthermore, the memory cell contacting region may be configured to electrically contact each of the memory cell structures, wherein the memory cell contacting region may include a plurality of contact regions, which are at least partially displaced with respect to each other in a direction parallel to the main processing surface of the substrate.
摘要:
In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a substrate, a fin structure disposed above the substrate, and a memory cell contacting region. The fin structure may include a memory cell region having a plurality of memory cell structures being disposed above one another, each memory cell structure having an active region of a respective memory cell. Furthermore, the memory cell contacting region may be configured to electrically contact each of the memory cell structures, wherein the memory cell contacting region may include a plurality of contact regions, which are at least partially displaced with respect to each other in a direction parallel to the main processing surface of the substrate.
摘要:
The bit lines are produced by an implantation of a dopant by means of a sacrificial hard mask layer, which is later replaced with the gate electrodes formed of polysilicon in the memory cell array. Striplike areas of the memory cell array, which run transversely to the bit lines, are reserved by a blocking layer to be occupied by the bit line contacts. In these areas, the hard mask is used to form contact holes, which are self-aligned with the implanted buried bit lines. Between the blocked areas, the word lines are arranged normally to the bit lines.
摘要:
Methods of forming metal interconnect layers include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming a recess in the electrically insulating layer, at a location adjacent the contact hole. The contact hole and the recess are then filled with a first electrically conductive material (e.g., tungsten (W)). At least a portion of the first electrically conductive material within the contact hole is then exposed. This exposure occurs by etching back a portion of the electrically insulating layer using the first electrically conductive material within the contact hole and within the recess as an etching mask. The first electrically conductive material within the recess is then removed to expose another portion of the electrically insulating layer. Following this, the exposed portion of the first electrically conductive material is covered with a second electrically conductive material (e.g., copper (Cu)), which directly contacts the exposed portion of the first electrically conductive material. This covering step results in the definition of a wiring pattern including the first and second electrically conductive materials.
摘要:
A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types. The first and second columns extend along a main crystal direction along which channeling of implanted ions occurs from a first surface into the epitaxial layer. A vertical dopant profile of one of the first and second columns includes first portions separated by second portions. In the first portions a dopant concentration varies by at most 30%. In the second portions the dopant concentration is lower than in the first portions. The ratio of a total length of the first portions to the total length of the first and second portions is at least 50%. The uniform dopant profiles improve device characteristics.
摘要:
In a method of making a semiconductor device, a first gate stack is formed on a substrate at a pFET region, which includes a first gate electrode material. The source/drain regions of the substrate are etched at the pFET region and the first gate electrode material of the first gate stack is etched at the pFET region. The etching is at least partially selective against etching oxide and/or nitride materials so that the nFET region is shielded by a nitride layer (and/or a first oxide layer) and so that the spacer structure of the pFET region at least partially remains. Source/drain recesses are formed and at least part of the first gate electrode material is removed by the etching to form a gate electrode recess at the pFET region. A SiGe material is epitaxially grown in the source/drain recesses and in the gate electrode recess at the pFET region. The SMT effect is achieved from the same nitride nFETs mask.
摘要:
A semiconductor device includes a substrate that includes a first layer and a recrystallized layer on the first layer. The first layer has a first intrinsic stress and the recrystallized layer has a second intrinsic stress. A transistor is formed in the recrystallized layer. The transistor includes a source region, a drain region, and a charge carrier channel between the source and drain regions. The second intrinsic stress is aligned substantially parallel to the charge carrier channel.
摘要:
To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.