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1.发明申请Compositions, layers and films for optoelectronic devices, methods of production and uses thereof 审中-公开用于光电子器件的组合物，层和膜，其制备方法及其用途公开(公告)号：US20080157065A1
公开(公告)日：2008-07-03
申请号：US11784966
申请日：2007-04-10
申请人： Ahila Krishnamoorthy , Joseph Kennedy , Richard Spear , Deborah Yellowaga , Peter Smith , Ben Palmer , Ronald Katsanes , Michael Tucker
发明人： Ahila Krishnamoorthy , Joseph Kennedy , Richard Spear , Deborah Yellowaga , Peter Smith , Ben Palmer , Ronald Katsanes , Michael Tucker
CPC分类号： C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/3122 , H01L21/3124 , H01L21/316 , H01L51/052 , H01L51/0545 , Y10T428/31
摘要： Optoelectronic devices are described that include: a) a surface within the device, and b) at least one sufficiently light-transmissive crosslinked film, wherein the film is formed from at least one silicon-based material, at least one catalyst, and at least one solvent. Optoelectronic device are also disclosed, which include: a) a surface within the device, and b) at least one light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material, at least one crosslinking agent and at least one solvent. Methods of producing optoelectronic devices are also disclosed that include: a) providing a surface, b) providing at least one sufficiently light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material and at least one catalyst, c) applying the crosslinkable material to the surface, and d) curing the crosslinkable material to form a sufficiently light-transmissive crosslinked composition. Crosslinkable compositions are disclosed that comprise: polyphenylsilsesquioxane, polyphenylsiloxane or a combination thereof, tetramethylammonium nitrate, at least one solvent, and an aminopropyl triethoxysilane-based compound.
摘要翻译： 描述了光电器件，其包括：a）器件内的表面，以及b）至少一个足够透光的交联膜，其中所述膜由至少一种硅基材料，至少一种催化剂形成，并且至少 一种溶剂。 还公开了光电子器件，其包括：a）器件内的表面，以及b）至少一种透光性可交联组合物，其中所述组合物包含至少一种硅基材料，至少一种交联剂和至少一种 溶剂。 还公开了制造光电器件的方法，其包括：a）提供表面，b）提供至少一种足够透光的可交联组合物，其中所述组合物包含至少一种硅基材料和至少一种催化剂，c）施加 可交联材料到表面，以及d）固化可交联材料以形成足够透光的交联组合物。 公开了可交联组合物，其包含：聚苯基倍半硅氧烷，聚苯基硅氧烷或其组合，四甲基硝酸铵，至少一种溶剂和氨基丙基三乙氧基硅烷基化合物。
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2.发明授权Compositions, layers and films for optoelectronic devices, methods of production and uses thereof 有权用于光电子器件的组合物，层和膜，其制备方法及其用途公开(公告)号：US08901268B2
公开(公告)日：2014-12-02
申请号：US12027113
申请日：2008-02-06
IPC分类号： C08G77/06 , H01L35/24 , H01L21/02 , C09D183/04 , H01L21/312 , H01L51/52 , C08G77/00
CPC分类号： H01L51/5262 , C08G77/70 , C09D183/04 , H01L21/02126 , H01L21/02137 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent.
摘要翻译： 本文公开的可交联组合物包含至少一种包含至少一个烷基和至少一个芳基或芳族基团的硅基材料，至少一种催化剂和至少一种溶剂。
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3.发明申请COMPOSITIONS, LAYERS AND FILMS FOR OPTOELECTRONIC DEVICES, METHODS OF PRODUCTION AND USES THEREOF 有权光电设备的组合物，层和膜，其生产方法及其用途公开(公告)号：US20110171447A1
公开(公告)日：2011-07-14
申请号：US12027113
申请日：2008-02-06
IPC分类号： C09D7/12
CPC分类号： H01L51/5262 , C08G77/70 , C09D183/04 , H01L21/02126 , H01L21/02137 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent.
摘要翻译： 本文公开的可交联组合物包含至少一种包含至少一个烷基和至少一个芳基或芳族基团的硅基材料，至少一种催化剂和至少一种溶剂。
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4.发明申请PROCESSABLE INORGANIC AND ORGANIC POLYMER FORMULATIONS, METHODS OF PRODUCTION AND USES THEREOF 有权可加工的无机和有机聚合物配方，生产方法及其用途公开(公告)号：US20110054119A1
公开(公告)日：2011-03-03
申请号：US12866568
申请日：2009-02-20
CPC分类号： C08K5/3445 , C08G77/045 , C08J5/18 , C08J2361/04 , C08J2383/04 , C08L61/06 , C09D183/04
摘要： Polymer formulations are disclosed and described herein that comprise: at least one polymer comprising at least one hydroxy functional group, at least one acid source, and at least one acid-activated crosslinker that reacts with the polymer. In contemplated embodiments, these polymer formulations are curable at relatively low temperatures, as compared to those polymer formulations not comprising contemplated crosslinkers. Transparent films formed from these contemplated formulations are also disclosed. Organic transparent film compositions are also disclosed that comprise: at least one at least one phenol-based polymer, at least one solvent; at least one acid-activated crosslinker; and at least one acid source. Methods of forming organic transparent films with improved transmittance by depositing on a substrate the formulations disclosed herein and curing the formulations or compositions at a temperature of less than about 200° C. Inorganic transparent film compositions are disclosed that include: at least one silanol-based polymer, at least one solvent; at least one acid-activated crosslinker; and at least one acid source. Methods of forming inorganic transparent films are disclosed by depositing on a substrate the formulations disclosed herein and curing the formulations or compositions at a temperature of 200° C. or less.
摘要翻译： 本文公开和描述的聚合物制剂包含：至少一种包含至少一种羟基官能团的聚合物，至少一种酸源和至少一种与聚合物反应的酸活化的交联剂。 在预期的实施方案中，与不包含预期的交联剂的那些聚合物配方相比，这些聚合物制剂在相对低的温度下是可固化的。 还公开了由这些预期制剂形成的透明膜。 还公开了有机透明膜组合物，其包含：至少一种至少一种苯酚基聚合物，至少一种溶剂; 至少一种酸活化交联剂; 和至少一种酸源。 通过在基底上沉积本文公开的制剂并形成在约200℃的温度下固化该制剂或组合物来形成有机透明薄膜的方法。公开了无机透明薄膜组合物，其包括：至少一种基于硅烷醇的 聚合物，至少一种溶剂; 至少一种酸活化的交联剂; 和至少一种酸源。 通过在基底上沉积本文公开的制剂并在200℃或更低的温度下固化该制剂或组合物来公开形成无机透明膜的方法。
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5.发明授权Processable inorganic and organic polymer formulations, methods of production and uses thereof 有权可加工的无机和有机聚合物配方，生产方法和用途公开(公告)号：US08859673B2
公开(公告)日：2014-10-14
申请号：US12866568
申请日：2009-02-20
IPC分类号： C08L83/06 , C08L29/00 , C08L61/10 , B05D3/00 , C08K5/3445 , C09D183/04 , C08G77/04 , C08J5/18 , C08L61/06
CPC分类号： C08K5/3445 , C08G77/045 , C08J5/18 , C08J2361/04 , C08J2383/04 , C08L61/06 , C09D183/04
摘要： Polymer formulations are disclosed and described herein that comprise: at least one polymer comprising at least one hydroxy functional group, at least one acid source, and at least one acid-activated crosslinker that reacts with the polymer. In contemplated embodiments, these polymer formulations are curable at relatively low temperatures, as compared to those polymer formulations not comprising contemplated crosslinkers. Transparent films formed from these contemplated formulations are also disclosed. Organic transparent film compositions are also disclosed that comprise: at least one at least one phenol-based polymer, at least one solvent; at least one acid-activated crosslinker; and at least one acid source. Methods of forming organic transparent films with improved transmittance by depositing on a substrate the formulations disclosed herein and curing the formulations or compositions at a temperature of less than about 200° C. Inorganic transparent film compositions are disclosed that include: at least one silanol-based polymer, at least one solvent; at least one acid-activated crosslinker; and at least one acid source. Methods of forming inorganic transparent films are disclosed by depositing on a substrate the formulations disclosed herein and curing the formulations or compositions at a temperature of 200° C. or less.
摘要翻译： 本文公开和描述的聚合物制剂包含：至少一种包含至少一种羟基官能团的聚合物，至少一种酸源和至少一种与聚合物反应的酸活化的交联剂。 在预期的实施方案中，与不包含预期的交联剂的那些聚合物配方相比，这些聚合物制剂在相对低的温度下是可固化的。 还公开了由这些预期制剂形成的透明膜。 还公开了有机透明膜组合物，其包含：至少一种至少一种苯酚基聚合物，至少一种溶剂; 至少一种酸活化的交联剂; 和至少一种酸源。 通过在基底上沉积本文公开的制剂并形成在约200℃的温度下固化该制剂或组合物来形成有机透明薄膜的方法。公开了无机透明薄膜组合物，其包括：至少一种基于硅烷醇的 聚合物，至少一种溶剂; 至少一种酸活化交联剂; 和至少一种酸源。 通过在基底上沉积本文公开的制剂并在200℃或更低的温度下固化该制剂或组合物来公开形成无机透明膜的方法。
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6.发明授权Method to form Cu/OSG dual damascene structure for high performance and reliable interconnects 失效形成Cu / OSG双镶嵌结构的方法，用于高性能和可靠的互连公开(公告)号：US06913994B2
公开(公告)日：2005-07-05
申请号：US10410122
申请日：2003-04-09
IPC分类号： H01L21/768 , H01L21/4763 , H01L21/302
CPC分类号： H01L21/76808
摘要： An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist containing the via pattern. A planarizing BARC layer is formed in the via to protect the exposed substrate from damage during trench formation. The method provides higher Kelvin via and via chain yields. Damage to the OSG layer at top corners of the via and trench is avoided. Furthermore, there is no pitting in the OSG layer at the trench bottom. Vertical sidewalls are achieved in the via and trench openings and via CD is maintained. The OSG loss during etching is minimized by removing the etch stop layer at an early stage of the dual damascene sequence.
摘要翻译： 描述了形成包括有机硅酸盐玻璃（OSG）介电层的双镶嵌结构的改进方法。 遵循经过第一工艺，其中在OSG层中形成通孔，并优选在SiC层上停止。 在剥离含有通孔图案的光致抗蚀剂之前，去除SiC层。 在通孔中形成平坦化的BARC层，以保护暴露的衬底免受沟槽形成期间的损坏。 该方法提供更高的开尔文通孔和通过链收率。 避免了通孔和沟槽顶角的OSG层的损坏。 此外，沟槽底部的OSG层没有点蚀。 在通孔和沟槽开口中实现垂直侧壁，并且保持通孔CD。 蚀刻期间的OSG损耗通过在双镶嵌序列的早期阶段去除蚀刻停止层来最小化。
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7.发明授权Metallization structures for microelectronic applications and process for forming the structures 有权用于微电子应用的金属化结构和用于形成结构的工艺公开(公告)号：US06486533B2
公开(公告)日：2002-11-26
申请号：US09990019
申请日：2001-11-21
IPC分类号： H01L27082
CPC分类号： H01L21/76846 , C25D3/58 , C25D5/18 , C25D7/12 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L21/76877 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.
摘要翻译： 阐述了一种用于微电子电路的金属化结构。 金属化结构包括电介质层，设置在电介质层外部的超薄膜接合层和设置在超薄膜结合层外部的低Me浓度的铜-Me合金层。 Me是铜以外的金属，优选为锌。 Me的浓度小于约5原子％，优选小于约2原子％，甚至更优选小于约1原子％。 在金属化结构的优选实施例中，电介质层，超薄膜结合层和铜-Me合金层都彼此紧邻地设置。 如果需要，可以在上述层序列的外部形成诸如铜膜的主导体。 本发明还考虑了用于形成上述结构的方法以及可用于沉积铜-Me合金层的电镀浴。
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8.发明授权公开(公告)号：US06368966B1
公开(公告)日：2002-04-09
申请号：US09386188
申请日：1999-08-31
IPC分类号： H01L2144
CPC分类号： H01L21/76846 , C25D3/58 , C25D5/18 , C25D7/12 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L21/76877 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.
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公开(公告)号：US06319387B1
公开(公告)日：2001-11-20
申请号：US09386772
申请日：1999-08-31
IPC分类号： C25D358
CPC分类号： H01L21/76846 , C25D3/58 , C25D5/18 , C25D7/12 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L21/76877 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.
摘要翻译： 阐述了一种用于微电子电路的金属化结构。 金属化结构包括电介质层，设置在电介质层外部的超薄膜结合层和设置在超薄膜结合层外部的低Me浓度的铜-Me合金层。 Me是铜以外的金属，优选为锌。 Me的浓度小于约5原子％，优选小于约2原子％，甚至更优选小于约1原子％。 在金属化结构的优选实施例中，电介质层，超薄膜结合层和铜-Me合金层都彼此紧邻地设置。 如果需要，可以在上述层序列的外部形成诸如铜膜的主导体。 本发明还考虑了用于形成上述结构的方法以及可用于沉积铜-Me合金层的电镀浴。
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公开(公告)号：US07202159B2
公开(公告)日：2007-04-10
申请号：US10809317
申请日：2004-03-24
IPC分类号： H01L21/4763
CPC分类号： H01L21/02126 , B82Y10/00 , B82Y30/00 , H01L21/02282 , H01L21/3121 , H01L21/76831 , H01L21/76834 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for forming a diffusion barrier layer, a diffusion barrier in an integrated circuit and an integrated circuit. The method for forming a diffusion barrier involves the following steps: 1) preparing a silicon substrate; 2) contacting the silicon substrate with a composition comprising self-assembled monolayer subunits and a solvent; and, 3) removing the solvent. The diffusion barrier layer includes a self-assembled monolayer. The integrated circuit includes a silicon substrate, a diffusion barrier layer and a metal deposited on the diffusion barrier layer. The diffusion barrier layer in the integrated circuit is covalently attached to the silicon substrate and includes a self-assembled monolayer.
摘要翻译： 本发明提供一种在集成电路中形成扩散阻挡层，扩散阻挡层和集成电路的方法。 形成扩散阻挡层的方法包括以下步骤：1）制备硅衬底; 2）使硅衬底与包含自组装单层亚单位和溶剂的组合物接触; 和3）除去溶剂。 扩散阻挡层包括自组装单层。 集成电路包括硅衬底，扩散阻挡层和沉积在扩散阻挡层上的金属。 集成电路中的扩散阻挡层共价连接到硅衬底并且包括自组装单层。
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