摘要:
Optoelectronic devices are described that include: a) a surface within the device, and b) at least one sufficiently light-transmissive crosslinked film, wherein the film is formed from at least one silicon-based material, at least one catalyst, and at least one solvent. Optoelectronic device are also disclosed, which include: a) a surface within the device, and b) at least one light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material, at least one crosslinking agent and at least one solvent. Methods of producing optoelectronic devices are also disclosed that include: a) providing a surface, b) providing at least one sufficiently light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material and at least one catalyst, c) applying the crosslinkable material to the surface, and d) curing the crosslinkable material to form a sufficiently light-transmissive crosslinked composition. Crosslinkable compositions are disclosed that comprise: polyphenylsilsesquioxane, polyphenylsiloxane or a combination thereof, tetramethylammonium nitrate, at least one solvent, and an aminopropyl triethoxysilane-based compound.
摘要:
Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent.
摘要:
Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent.
摘要:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.
摘要:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.
摘要:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
摘要:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
摘要:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
摘要:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
摘要:
Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.