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    SOLAR CELL EMPLOYING AN ENHANCED FREE HOLE DENSITY P-DOPED MATERIAL AND METHODS FOR FORMING THE SAME
    3.
    发明申请
    SOLAR CELL EMPLOYING AN ENHANCED FREE HOLE DENSITY P-DOPED MATERIAL AND METHODS FOR FORMING THE SAME 审中-公开
    使用增强型自由孔密度P型材料的太阳能电池及其形成方法

    公开(公告)号：US20120012167A1

    公开(公告)日：2012-01-19

    申请号：US12835238

    申请日：2010-07-13

    申请人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jee H. Kim ,  Mohamed Saad ,  Devendra K. Sadana

    发明人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jee H. Kim ,  Mohamed Saad ,  Devendra K. Sadana

    IPC分类号： H01L31/0288 ,  H01L31/18

    CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/1816 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.

    摘要翻译： 使用载气内的惰性气体形成光伏器件的p掺杂半导体层。 载气内的惰性气体的存在增加了p掺杂半导体层内的自由空穴密度。 这降低了在与透明导电材料层的界面处的肖特基势垒，从而显着降低了光伏器件的串联电阻。 串联电阻的降低增加了光伏器件的开路电压，填充因子和效率。 如果p掺杂半导体层也掺杂有碳，并且具有大于1.85V的带隙，则该效果更加突出。 如果载气包括H 2和惰性气体的混合物，则p掺杂半导体层的p掺杂半导体材料可以被氢化。

    PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME
    7.
    发明申请
    PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME 审中-公开
    含有界面含锗的光伏器件及其形成方法

    公开(公告)号：US20120152352A1

    公开(公告)日：2012-06-21

    申请号：US12968490

    申请日：2010-12-15

    申请人： Tze-Chiang Chen ,  Jee H. Kim ,  Devendra K. Sadana ,  Ahmed Abou-Kandil ,  Mohamed Saad

    发明人： Tze-Chiang Chen ,  Jee H. Kim ,  Devendra K. Sadana ,  Ahmed Abou-Kandil ,  Mohamed Saad

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/075 ,  H01L31/02167 ,  H01L31/1816 ,  Y02E10/548

    摘要： A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.

    摘要翻译： 在p掺杂的含硅层和光伏器件的透明导电材料层之间提供含锗层。 含锗层可以是p掺杂的硅 - 锗合金层或锗层。 含锗层具有比p掺杂的含硅层更大的锗原子浓度。 含锗层的存在具有降低串联电阻并增加光伏器件的分流电阻的效果，从而增加光伏器件的填充因子和效率。 在使用硅 - 锗合金层的情况下，闭路电流密度也增加。

    Mixed temperature deposition of thin film silicon tandem cells
    9.
    发明授权
    Mixed temperature deposition of thin film silicon tandem cells 有权
    薄膜硅串联电池的混合温度沉积

    公开(公告)号：US08859321B2

    公开(公告)日：2014-10-14

    申请号：US13017671

    申请日：2011-01-31

    申请人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

    发明人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

    IPC分类号： H01L21/00 ,  H01L31/076 ,  H01L31/18

    CPC分类号： H01L31/076 ,  H01L31/18 ,  Y02E10/548

    摘要： Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.

    摘要翻译： 串联光伏器件的制造包括在其间形成具有N型层，P型层和底部本征层的底部电池。 相对于底部单元形成顶部单元。 顶部单元具有N型层，P型层和顶层本征层。 顶部本征层由在不同于底部本征层的温度沉积的未掺杂材料形成，使得顶部本征层和底部本征层的带隙能量对于每个单元而言逐渐降低。