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    PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME
    1.
    发明申请
    PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME 审中-公开
    含有界面含锗的光伏器件及其形成方法

    公开(公告)号：US20120152352A1

    公开(公告)日：2012-06-21

    申请号：US12968490

    申请日：2010-12-15

    申请人： Tze-Chiang Chen ,  Jee H. Kim ,  Devendra K. Sadana ,  Ahmed Abou-Kandil ,  Mohamed Saad

    发明人： Tze-Chiang Chen ,  Jee H. Kim ,  Devendra K. Sadana ,  Ahmed Abou-Kandil ,  Mohamed Saad

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/075 ,  H01L31/02167 ,  H01L31/1816 ,  Y02E10/548

    摘要： A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.

    摘要翻译： 在p掺杂的含硅层和光伏器件的透明导电材料层之间提供含锗层。 含锗层可以是p掺杂的硅 - 锗合金层或锗层。 含锗层具有比p掺杂的含硅层更大的锗原子浓度。 含锗层的存在具有降低串联电阻并增加光伏器件的分流电阻的效果，从而增加光伏器件的填充因子和效率。 在使用硅 - 锗合金层的情况下，闭路电流密度也增加。

    SOLAR CELL EMPLOYING AN ENHANCED FREE HOLE DENSITY P-DOPED MATERIAL AND METHODS FOR FORMING THE SAME
    5.
    发明申请
    SOLAR CELL EMPLOYING AN ENHANCED FREE HOLE DENSITY P-DOPED MATERIAL AND METHODS FOR FORMING THE SAME 审中-公开
    使用增强型自由孔密度P型材料的太阳能电池及其形成方法

    公开(公告)号：US20120012167A1

    公开(公告)日：2012-01-19

    申请号：US12835238

    申请日：2010-07-13

    申请人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jee H. Kim ,  Mohamed Saad ,  Devendra K. Sadana

    发明人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jee H. Kim ,  Mohamed Saad ,  Devendra K. Sadana

    IPC分类号： H01L31/0288 ,  H01L31/18

    CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/1816 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.

    摘要翻译： 使用载气内的惰性气体形成光伏器件的p掺杂半导体层。 载气内的惰性气体的存在增加了p掺杂半导体层内的自由空穴密度。 这降低了在与透明导电材料层的界面处的肖特基势垒，从而显着降低了光伏器件的串联电阻。 串联电阻的降低增加了光伏器件的开路电压，填充因子和效率。 如果p掺杂半导体层也掺杂有碳，并且具有大于1.85V的带隙，则该效果更加突出。 如果载气包括H 2和惰性气体的混合物，则p掺杂半导体层的p掺杂半导体材料可以被氢化。