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公开(公告)号：US08398814B2
公开(公告)日：2013-03-19
申请号：US12499742
申请日：2009-07-08
IPC分类号： H01L21/3065
CPC分类号： C23C16/4412 , C23C16/45591
摘要： A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.
摘要翻译： 描述了可调气流均衡器。 在一个实施例中，可调流量均衡器包括具有主开口和次开口的气流均衡器板。 主开口可以围绕衬底支撑件，并且次级开口可以配置有调谐器。 在一个实施例中，衬底支撑件可以相对于气流均衡器板垂直调节。 可以通过调节在气流均衡器板中配置有次级开口的调谐器和/或通过调节具有相对于气流均衡器板的向内锥形裙部528的垂直定位的衬底支撑板的高度来微调流动均匀性 520。
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公开(公告)号：US20110005680A1
公开(公告)日：2011-01-13
申请号：US12499742
申请日：2009-07-08
IPC分类号： H01L21/3065 , C23C16/54
CPC分类号： C23C16/4412 , C23C16/45591
摘要： A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.
摘要翻译： 描述了可调气流均衡器。 在一个实施例中，可调流量均衡器包括具有主开口和次开口的气流均衡器板。 主开口可以围绕衬底支撑件，并且次级开口可以配置有调谐器。 在一个实施例中，衬底支撑件可以相对于气流均衡器板垂直调节。 可以通过调节在气流均衡器板中配置有次级开口的调谐器和/或通过调节具有相对于气流均衡器板的向内锥形裙部528的垂直定位的衬底支撑板的高度来微调流动均匀性 520。
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公开(公告)号：US08440019B2
公开(公告)日：2013-05-14
申请号：US13607425
申请日：2012-09-07
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。
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公开(公告)号：US08075728B2
公开(公告)日：2011-12-13
申请号：US12038887
申请日：2008-02-28
IPC分类号： C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。
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公开(公告)号：US07987814B2
公开(公告)日：2011-08-02
申请号：US12099007
申请日：2008-04-07
IPC分类号： C23C16/452 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/22 , C23C16/06
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。
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公开(公告)号：US20130087286A1
公开(公告)日：2013-04-11
申请号：US13629267
申请日：2012-09-27
申请人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H05H1/46
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32091 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01J37/32733 , H01J37/32743 , H01J37/32834 , H01J2237/3321 , H01J2237/3323 , H01J2237/3344 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
摘要翻译： 本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。 通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。 此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。
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公开(公告)号：US20090218043A1
公开(公告)日：2009-09-03
申请号：US12038887
申请日：2008-02-28
IPC分类号： H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。
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8.发明申请REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING PLASMA PRODUCTS IN A LOWER PROCESS ZONE AND PURGE GASES IN AN UPPER PROCESS ZONE 审中-公开在下一个工艺区域中使用等离子体产品并在上一个工艺区域中使用过滤器的水分离反应器公开(公告)号：US20080179007A1
公开(公告)日：2008-07-31
申请号：US11685770
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. The reactor further includes workpiece support apparatus within the chamber configured for a workpiece to be placed thereon with its front side facing the ceiling. The support apparatus is configured to leave at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with an outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone, the reactor further comprising a vacuum pump coupled to the lower process zone. An external plasma-generating chamber is coupled to the chamber, the external plasma-generating chamber configured to introduce a plasma by-product into the lower process zone, and a supply of a polymer etch precursor gas to the external plasma-generating chamber. The ceiling includes a gas distribution plate facing the upper process zone, the reactor further comprising a purge gas supply coupled to the gas distribution plate.
摘要翻译： 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 所述反应器还包括在所述室内的工件支撑装置，所述工件支撑装置构造成用于要放置在其上的工件，其前侧面向天花板。 支撑装置被配置为留下被暴露的工件的后侧的至少一个环形周边。 限制构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间分隔室的边界 反应器还包括耦合到下处理区的真空泵。 外部等离子体产生室耦合到室，外部等离子体发生室被配置为将等离子体副产物引入下部工艺区域，以及向外部等离子体产生室供应聚合物蚀刻前体气体。 天花板包括面向上处理区的气体分配板，反应器还包括连接到气体分配板的净化气体供应源。
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公开(公告)号：US08118938B2
公开(公告)日：2012-02-21
申请号：US13191850
申请日：2011-07-27
IPC分类号： C23C16/455 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
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10.发明申请REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING AN ETCH PLASMA FEEDING A LOWER PROCESS ZONE AND A SCAVENGER PLASMA FEEDING AN UPPER PROCESS ZONE 审中-公开使用等离子体等离子体进行离散聚合物的反应器下一个工艺区域和SCAVENGER等离子体进料上一个工艺区域公开(公告)号：US20080179008A1
公开(公告)日：2008-07-31
申请号：US11685772
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： H01L21/306
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.
摘要翻译： 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界 。 真空泵联接到下部处理区。 较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。 耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。
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