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    Method of thermal processing structures formed on a substrate
    1.
    发明授权
    Method of thermal processing structures formed on a substrate 有权
    在基板上形成的热处理结构的方法

    公开(公告)号：US07569463B2

    公开(公告)日：2009-08-04

    申请号：US11459847

    申请日：2006-07-25

    申请人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    发明人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    IPC分类号： H01L21/04

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明总体上描述了一种或多种用于在衬底的期望区域上进行退火处理的设备和各种方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE
    2.
    发明申请
    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 有权
    在基材上形成的热处理结构的方法

    公开(公告)号：US20070218644A1

    公开(公告)日：2007-09-20

    申请号：US11459847

    申请日：2006-07-25

    申请人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    发明人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    IPC分类号： H01L21/76

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明总体上描述了一种或多种用于在衬底的期望区域上进行退火处理的设备和各种方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    Thermally processing a substrate
    3.
    发明授权
    Thermally processing a substrate 失效
    热处理基材

    公开(公告)号：US06803546B1

    公开(公告)日：2004-10-12

    申请号：US09611349

    申请日：2000-07-06

    申请人： Ryan C Boas ,  Ajit Balakrishna ,  Benjamin Bierman ,  Brian L Haas ,  Dean Jennings ,  Wolfgang Aderhold ,  Sundar Ramamurthy ,  Abhilash Mayur

    发明人： Ryan C Boas ,  Ajit Balakrishna ,  Benjamin Bierman ,  Brian L Haas ,  Dean Jennings ,  Wolfgang Aderhold ,  Sundar Ramamurthy ,  Abhilash Mayur

    IPC分类号： F27B514

    CPC分类号： C30B25/10 ,  C30B31/12 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

    摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.

    摘要翻译： 描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。 这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。 特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。 可以通过改变基底和热储层之间的热导率，改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。

    Thermally processing a substrate
    5.
    发明授权
    Thermally processing a substrate 有权
    热处理基材

    公开(公告)号：US06215106B1

    公开(公告)日：2001-04-10

    申请号：US09350415

    申请日：1999-07-08

    申请人： Ryan C. Boas ,  Ajit Balakrishna ,  Benjamin B. Bierman ,  Brian L. Haas ,  Dean Jennings ,  Wolfgang R. Aderhold

    发明人： Ryan C. Boas ,  Ajit Balakrishna ,  Benjamin B. Bierman ,  Brian L. Haas ,  Dean Jennings ,  Wolfgang R. Aderhold

    IPC分类号： F27B514

    CPC分类号： C23C16/45504 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/14

    摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a watercooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir. The thermal conductivity may be changed by changing the characteristics of a thermal transport medium (e.g., a purge gas) located between the substrate and the thermal reservoir. For example, the thermal conductivity may be changed by changing the composition of the purge gas or the pressure of the purge gas between the substrate and the thermal reservoir. In one implementation, the substrate is heated in accordance with a heating schedule and, during the heating schedule, the rate of heat transfer between the substrate and a thermal reservoir inside the thermal processing system is changed. In another implementation, a first purge gas is supplied into the thermal processing system, the substrate is heated in accordance with a heating schedule, and a second purge gas that is different from the first purge gas is supplied into the thermal processing system.

    摘要翻译： 描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。 这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。 特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。 通过改变基底和热储层之间的热导率，通过改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。 可以通过改变位于基板和热储存器之间的热传输介质（例如，吹扫气体）的特性来改变热导率。 例如，可以通过改变吹扫气体的组成或衬底和热存储器之间的吹扫气体的压力来改变热导率。 在一个实施方案中，根据加热方案对基底进行加热，并且在加热计划期间改变基底和热处理系统内的热储存器之间的热传递速率。 在另一实施方案中，将第一吹扫气体供应到热处理系统中，基于加热时间表加热基板，并且将不同于第一吹扫气体的第二吹扫气体供应到热处理系统中。

    Methods and apparatus for rapidly responsive heat control in plasma processing devices
    6.
    发明授权
    Methods and apparatus for rapidly responsive heat control in plasma processing devices 有权
    等离子体处理装置中快速响应热控制的方法和装置

    公开(公告)号：US09155134B2

    公开(公告)日：2015-10-06

    申请号：US12253657

    申请日：2008-10-17

    申请人： Chunlei Zhang ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

    发明人： Chunlei Zhang ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B7/18 ,  H01J37/32 ,  H01L21/67

    CPC分类号： H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

    摘要： Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

    摘要翻译： 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。

    Gas flow equalizer plate suitable for use in a substrate process chamber
    9.
    发明授权
    Gas flow equalizer plate suitable for use in a substrate process chamber 失效
    气流平衡板，适用于衬底加工室

    公开(公告)号：US08075728B2

    公开(公告)日：2011-12-13

    申请号：US12038887

    申请日：2008-02-28

    申请人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    发明人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01J37/32449 ,  H01J37/3244

    摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.

    摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。