公开(公告)号：US08894805B2

公开(公告)日：2014-11-25

申请号：US13595452

申请日：2012-08-27

申请人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

发明人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

IPC分类号： H05H1/46 ,  H01J37/32 ,  H05H7/00

CPC分类号： H01J37/3233 ,  H05H1/46 ,  H05H7/001

摘要： A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

摘要翻译： 等离子体反应器采用电子束源产生等离子体，并且电子束源具有可配置的磁屏蔽。

公开(公告)号：US20130098883A1

公开(公告)日：2013-04-25

申请号：US13595452

申请日：2012-08-27

申请人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

发明人： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

IPC分类号： B23K15/00

CPC分类号： H01J37/3233 ,  H05H1/46 ,  H05H7/001

摘要： A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

摘要翻译： 等离子体反应器采用电子束源产生等离子体，并且电子束源具有可配置的磁屏蔽。

公开(公告)号：US20090188624A1

公开(公告)日：2009-07-30

申请号：US12020043

申请日：2008-01-25

申请人： KALLOL BERA ,  James D. Carducci ,  Ajit Balakrishna ,  Shahid Rauf ,  Kenneth S. Collins ,  Andrew Nguyen ,  Hamid Noorbakhsh

发明人： KALLOL BERA ,  James D. Carducci ,  Ajit Balakrishna ,  Shahid Rauf ,  Kenneth S. Collins ,  Andrew Nguyen ,  Hamid Noorbakhsh

IPC分类号： H01L21/306

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

摘要翻译： 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的设备可以包括具有与其相连的内部体积和排气系统的处理室，其中排气系统包括多个第一管道，每个第一管道具有适于从内部 处理室的体积。 泵送气室连接到多个第一管道中的每一个。 泵送气室具有适于泵送来自腔室的排气的泵送口。 多个第一导管的每个入口与泵送端口之间的电导基本相当。

公开(公告)号：US20080179008A1

公开(公告)日：2008-07-31

申请号：US11685772

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： H01L21/306

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.

摘要翻译： 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界 。 真空泵联接到下部处理区。 较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。 耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

公开(公告)号：US20130087286A1

公开(公告)日：2013-04-11

申请号：US13629267

申请日：2012-09-27

申请人： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

发明人： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC分类号： H05H1/46

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

摘要翻译： 本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。 通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。 此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

公开(公告)号：US20080179007A1

公开(公告)日：2008-07-31

申请号：US11685770

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. The reactor further includes workpiece support apparatus within the chamber configured for a workpiece to be placed thereon with its front side facing the ceiling. The support apparatus is configured to leave at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with an outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone, the reactor further comprising a vacuum pump coupled to the lower process zone. An external plasma-generating chamber is coupled to the chamber, the external plasma-generating chamber configured to introduce a plasma by-product into the lower process zone, and a supply of a polymer etch precursor gas to the external plasma-generating chamber. The ceiling includes a gas distribution plate facing the upper process zone, the reactor further comprising a purge gas supply coupled to the gas distribution plate.

摘要翻译： 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 所述反应器还包括在所述室内的工件支撑装置，所述工件支撑装置构造成用于要放置在其上的工件，其前侧面向天花板。 支撑装置被配置为留下被暴露的工件的后侧的至少一个环形周边。 限制构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间分隔室的边界 反应器还包括耦合到下处理区的真空泵。 外部等离子体产生室耦合到室，外部等离子体发生室被配置为将等离子体副产物引入下部工艺区域，以及向外部等离子体产生室供应聚合物蚀刻前体气体。 天花板包括面向上处理区的气体分配板，反应器还包括连接到气体分配板的净化气体供应源。

公开(公告)号：US07967996B2

公开(公告)日：2011-06-28

申请号：US11801409

申请日：2007-05-08

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Shahid Rauf ,  Ajit Balakrishna ,  Valentin N. Todorow ,  Kartik Ramaswamy ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Walter R. Merry ,  Ying Rui ,  Michael R. Rice

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Shahid Rauf ,  Ajit Balakrishna ,  Valentin N. Todorow ,  Kartik Ramaswamy ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Walter R. Merry ,  Ying Rui ,  Michael R. Rice

IPC分类号： B44C1/22

CPC分类号： B08B7/00 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/0209 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68764

摘要： A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.

摘要翻译： 提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。 对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物 到晶圆背面。 对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂 。

公开(公告)号：US20080179291A1

公开(公告)日：2008-07-31

申请号：US11801409

申请日：2007-05-08

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Shahid Rauf ,  Ajit Balakrishna ,  Valentin N. Todorow ,  Kartik Ramaswamy ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Walter R. Merry ,  Ying Rui ,  Michael R. Rice

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Shahid Rauf ,  Ajit Balakrishna ,  Valentin N. Todorow ,  Kartik Ramaswamy ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Walter R. Merry ,  Ying Rui ,  Michael R. Rice

IPC分类号： C23F1/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/0209 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68764

摘要： A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.

摘要翻译： 提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。 对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物 到晶圆背面。 对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂 。

公开(公告)号：US20080179289A1

公开(公告)日：2008-07-31

申请号：US11685769

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a local plasma chamber from a polymer etch precursor gas. The process includes directing a localized stream of an etchant by-product from the first plasma onto a target portion of the backside of the workpiece, the target portion having a diameter corresponding to a diameter of the stream, while rotating the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件的边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在聚合物蚀刻前体气体的局部等离子体室中产生第一等离子体。 该方法包括将来自第一等离子体的蚀刻剂副产物的局部流引导到工件的背面的目标部分上，目标部分具有对应于流的直径的直径，同时旋转工件。

公开(公告)号：US20080179287A1

公开(公告)日：2008-07-31

申请号：US11685766

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hirojii Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/0209 ,  H01L21/02063 ,  H01L21/31138

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 气体流动被限制在工件的边缘处的工件边缘的间隙内，该间隙构造成约为室直径的约1％，间隙限定了含有 前侧和一个含有背面的下部工艺区。 该方法进一步包括排空下部工艺区域，从聚合物蚀刻前体气体在外部室中产生等离子体，以及将副产物从等离子体引入下部工艺区域。 该方法还包括将净化气体泵入上部工艺区域以从上部工艺区域去除聚合物蚀刻物质。