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    POWER SEMICONDUCTOR DEVICE
    2.
    发明申请
    POWER SEMICONDUCTOR DEVICE 有权
    功率半导体器件

    公开(公告)号：US20140225114A1

    公开(公告)日：2014-08-14

    申请号：US14346466

    申请日：2012-06-07

    申请人： Akihiko Furukawa ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Masayuki Imaizumi ,  Kazuyasu Nishikawa

    发明人： Akihiko Furukawa ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Masayuki Imaizumi ,  Kazuyasu Nishikawa

    IPC分类号： H01L23/60 ,  H01L27/02

    CPC分类号： H01L23/60 ,  H01L27/0296 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7815 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power semiconductor device includes a second conductive type sense outer-peripheral well formed to surround a plurality of sense wells on the surface of a drift layer, a first conductive type main-cell source region selectively formed on the surface of the main cell well, a first conductive type sense source region selectively formed on the surface of the sense well, a first conductive type capacitor lower electrode region selectively formed on the surface of the sense outer-peripheral well, a gate insulation film formed on the channel regions and on the sense outer-peripheral well, a gate electrode formed on the gate insulation film, and a sense pad electrically connected to the sense well and the sense source region as well as on the sense outer-peripheral well and the capacitor lower electrode region.

    摘要翻译： 功率半导体器件包括形成为围绕漂移层表面上的多个感测阱的第二导电型感测外周阱，选择性地形成在主电池阱的表面上的第一导电型主电池源区， 选择性地形成在感测阱的表面上的第一导电型感测源极区，选择性地形成在感测外周阱的表面上的第一导电型电容器下电极区域，形成在沟道区域上的栅极绝缘膜 形成在栅极绝缘膜上的栅电极，以及与感测阱和感测源区以及感应外周阱和电容器下电极区电连接的检测焊盘。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
    3.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME 有权
    硅碳化硅半导体器件及其制造方法

    公开(公告)号：US20140001472A1

    公开(公告)日：2014-01-02

    申请号：US13995993

    申请日：2011-05-18

    申请人： Akihiko Furukawa ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Masayuki Imaizumi

    发明人： Akihiko Furukawa ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Masayuki Imaizumi

    IPC分类号： H01L29/16 ,  H01L21/02

    CPC分类号： H01L21/02529 ,  H01L21/8213 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7828 ,  H01L29/872

    摘要： A silicon carbide semiconductor device including an SBD measuring a temperature of a silicon carbide semiconductor element. The silicon carbide semiconductor device includes a MOSFET formed on a silicon carbide epitaxial substrate, and an SBD section measuring a temperature of the MOSFET. The SBD section includes an n-type cathode region in a surface portion of a silicon carbide drift layer; an anode titanium electrode formed on the cathode region, the electrode serving as a Schottky electrode; an n-type cathode contact region of a higher concentration than that of the cathode region, formed in the surface portion of the silicon carbide drift layer to make contact with the cathode region; a cathode ohmic electrode formed on the cathode contact region; and a first p-type well region formed within the silicon carbide drift layer to surround peripheries of the cathode region and the cathode contact region.

    摘要翻译： 一种碳化硅半导体器件，包括测量碳化硅半导体元件的温度的SBD。 碳化硅半导体器件包括形成在碳化硅外延衬底上的MOSFET和测量MOSFET的温度的SBD部分。 SBD部分包括在碳化硅漂移层的表面部分中的n型阴极区域; 在阴极区域形成的阳极钛电极，用作肖特基电极的电极; 形成在碳化硅漂移层的表面部分中以与阴极区接触的n型阴极接触区域，其浓度高于阴极区域; 形成在阴极接触区域上的阴极欧姆电极; 以及形成在碳化硅漂移层内以围绕阴极区域和阴极接触区域的周边的第一p型阱区域。