公开(公告)号：US5705831A

公开(公告)日：1998-01-06

申请号：US415540

申请日：1995-04-03

申请人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

发明人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/06

摘要： According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0

摘要翻译： 根据本发明的一个方面，提供了由Zn1-xCdxSe（其中0

公开(公告)号：US5619520A

公开(公告)日：1997-04-08

申请号：US523189

申请日：1995-09-05

申请人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

发明人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

IPC分类号： H01S5/223 ,  H01S5/347 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/2231

摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x

摘要翻译： 本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0

公开(公告)号：US06399970B2

公开(公告)日：2002-06-04

申请号：US08931562

申请日：1997-09-16

申请人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

发明人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

IPC分类号： H01L29778

CPC分类号： H01L29/66431 ,  H01L21/8238 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1029 ,  H01L29/161 ,  H01L29/7782

摘要： Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.

摘要翻译： Si和SiGeC层形成在Si衬底上的NMOS晶体管中。 使用存在于SiGeC和Si层之间的异质界面处的导带的不连续部分来形成载流子积累层。 电子在作为通道的载流子累积层中行进。 在SiGeC层中，电子迁移率大于硅中的电子迁移率，从而增加NMOS晶体管的工作速度。 在PMOS晶体管中，通过在SiGe和Si层之间的界面处使用价带的不连续部分来形成空穴行进的沟道。 SiGe层中的空穴迁移率也大于Si层，因此增加PMOS晶体管的工作速度。 可以提供具有场效应晶体管的半导体器件，其具有在晶体缺陷中减少的沟道。

公开(公告)号：US4702781A

公开(公告)日：1987-10-27

申请号：US787369

申请日：1985-10-15

申请人： Yoichi Sasai ,  Minoru Kubo

发明人： Yoichi Sasai ,  Minoru Kubo

IPC分类号： C30B19/10 ,  C30B19/00 ,  C30B19/06 ,  H01L21/208

CPC分类号： C30B19/063 ,  H01L21/02392 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

摘要： Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of solutions for use in epitaxial growth, in which method, epitaxial growth of a layer having thickness of less than 500 .ANG. is carried out under the condition that the slider is sliding in one direction, i.e., without stopping the sliding movement of the slider. Thereby, the thickness of the growth layer is controlled by controlling the time when the substrate contacts the solution, or by the sliding speed of the slider.

摘要翻译： 公开了使用具有容纳半导体衬底的凹部的滑块的液相外延生长方法，以及具有保持多种用于外延生长的溶液的溶液保持器的生长舟皿，其中， 在滑块在一个方向上滑动的条件下，即不停止滑动件的滑动运动的条件下，执行小于500的厚度ANGSTROM。 由此，通过控制基板与溶液接触的时间或滑块的滑动速度来控制生长层的厚度。

公开(公告)号：US06674100B2

公开(公告)日：2004-01-06

申请号：US10115983

申请日：2002-04-05

申请人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

发明人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

IPC分类号： H01L29778

CPC分类号： H01L29/66431 ,  H01L21/8238 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1029 ,  H01L29/161 ,  H01L29/7782

摘要： Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.

摘要翻译： Si和SiGeC层形成在Si衬底上的NMOS晶体管中。 使用存在于SiGeC和Si层之间的异质界面处的导带的不连续部分来形成载流子积累层。 电子在作为通道的载流子累积层中行进。 在SiGeC层中，电子迁移率大于硅中的电子迁移率，从而增加NMOS晶体管的工作速度。 在PMOS晶体管中，通过在SiGe和Si层之间的界面处使用价带的不连续部分来形成空穴行进的沟道。 SiGe层中的空穴迁移率也大于Si层，因此增加PMOS晶体管的工作速度。 可以提供具有场效应晶体管的半导体器件，其具有在晶体缺陷中减少的沟道。

公开(公告)号：US06190975B1

公开(公告)日：2001-02-20

申请号：US09208024

申请日：1998-12-09

申请人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

发明人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

IPC分类号： H01L21336

CPC分类号： H01L29/66431 ,  H01L21/8238 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1029 ,  H01L29/161 ,  H01L29/7782

摘要： Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.

摘要翻译： Si和SiGeC层形成在Si衬底上的NMOS晶体管中。 使用存在于SiGeC和Si层之间的异质界面处的导带的不连续部分来形成载流子积累层。 电子在作为通道的载流子累积层中行进。 在SiGeC层中，电子迁移率大于硅中的电子迁移率，从而增加NMOS晶体管的工作速度。 在PMOS晶体管中，通过在SiGe和Si层之间的界面处使用价带的不连续部分来形成正空穴行进的沟道。 SiGe层中的空穴迁移率也大于Si层，因此增加PMOS晶体管的工作速度。 可以提供具有场效应晶体管的半导体器件，其具有在晶体缺陷中减少的沟道。

公开(公告)号：US07105449B1

公开(公告)日：2006-09-12

申请号：US10111599

申请日：2000-10-27

申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh

发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh

IPC分类号： H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/8249

摘要： A thermal cleaning of a substrate that has been subjected to wet cleaning is carried out under a high vacuum atmosphere to remove an oxide film remaining on the substrate. Thereafter, a thermal cleaning is carried out under a hydrogen atmosphere to remove contamination such as carbon or the like. At this time, the oxide film has already been removed and therefore contamination is effectively removed by a relatively low temperature and short duration thermal cleaning. Thus, problems such as the degradation of the profile of the impurity concentration in the impurity diffusion layer which has been formed over the substrate are prevented.

摘要翻译： 进行了湿式清洗的基板的热清洗是在高真空气氛下进行的，以除去留在基板上的氧化膜。 此后，在氢气氛下进行热清洗以除去诸如碳等的污染物。 此时，氧化膜已经被去除，因此通过相对低的温度和短时间的热清洁有效地去除污染。 因此，防止了在衬底上形成的杂质扩散层中的杂质浓度分布的劣化的问题。

公开(公告)号：US06537369B1

公开(公告)日：2003-03-25

申请号：US09979881

申请日：2001-11-27

申请人： Tohru Saitoh ,  Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Minoru Kubo

发明人： Tohru Saitoh ,  Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Minoru Kubo

IPC分类号： C30B2302

CPC分类号： H01L29/161 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T428/12674 ,  Y10T428/265

摘要： A B-doped Si1−x−yGexCy layer 102 (where 0

摘要翻译： 使用UHV-CVD工艺在Si衬底101上外延生长B掺杂的Si1-x-yGexCy层102（其中0

公开(公告)号：US06277657B1

公开(公告)日：2001-08-21

申请号：US09530926

申请日：2000-05-08

申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

IPC分类号： H01L2100

CPC分类号： C30B29/06 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

摘要： A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si2H6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating &PSgr;, &Dgr;. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.

摘要翻译： 晶体生长装置包括真空容器，加热灯，用于控制加热灯的灯控制器，气体入口端口，用于调节气体流量的流量调节器，用于测量基板温度的高温计， 以及用于向真空容器供给Si 2 H 6气体等的气体供给单元。 用于椭圆测量的装置包括：光源，偏振器，调制器，分析器，分光计/检测器单元和用于计算＆amp; EDG的分析控制单元。 在从基板上除去化学氧化物膜的同时，原位椭圆测量可以区分衬底的表面被氧化膜覆盖的相1和衬底的表面部分露出的相2 使得适合于各个相的气体供应被执行和停止。

公开(公告)号：US4885260A

公开(公告)日：1989-12-05

申请号：US156525

申请日：1988-02-16

申请人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

发明人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S117/904 ,  Y10S148/048 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/094 ,  Y10S438/925 ,  Y10S438/936

摘要： Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

摘要翻译： 公开了一种化合物半导体的气相生长方法，其中源气体以固定的进料速率被引入外延生长反应器中，基板表面被光照射，并且光照射被打开和关闭，或者光照射强度 增加或减少，使得外延层结构改变组成，并且载流子浓度和导电类型在生长膜中在厚度方向上突然或连续地变化。