利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.034 秒)

    Method of manufacturing semiconductor device and method of forming pattern
    1.
    发明授权
    Method of manufacturing semiconductor device and method of forming pattern 有权
    制造半导体器件的方法和形成图案的方法

    公开(公告)号：US07060635B2

    公开(公告)日：2006-06-13

    申请号：US10603077

    申请日：2003-06-25

    申请人： Akihiko Otoguro ,  Satoshi Takechi ,  Takatoshi Deguchi

    发明人： Akihiko Otoguro ,  Satoshi Takechi ,  Takatoshi Deguchi

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76811 ,  G03F7/0757 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/3122 ,  Y10S438/942 ,  Y10S438/952

    摘要： The present invention provides a method of manufacturing a semiconductor device which includes a step of forming a laminated film for pattern formation on a substrate, in which the laminated film for pattern formation includes an innermost layer, an inner layer and a surface layer, an extinction coefficient k of the innermost layer is 0.3 or more, and an extinction coefficient k of the inner layer is 0.12 or more. It also provides a method of forming a pattern which includes a step of forming a laminated film for pattern formation on a substrate, in which the laminated film for pattern formation includes an innermost layer, an inner layer and a surface layer, an extinction coefficient k of the innermost layer is 0.3 or more, and an extinction coefficient k of the inner layer is 0.12 or more.

    摘要翻译： 本发明提供一种制造半导体器件的方法，该方法包括在基片上形成用于图形形成的叠层薄膜的步骤，其中图形形成用叠层薄膜包括最内层，内层和表面层，消光 最内层的系数k为0.3以上，内层的消光系数k为0.12以上。 还提供了形成图案的方法，其包括在基板上形成用于图案形成的层叠膜的步骤，其中用于图案形成的层叠膜包括最内层，内层和表面层，消光系数k 最内层的消光系数k为0.12以上。

    Multi-layered resist structure and manufacturing method of semiconductor device
    2.
    发明授权
    Multi-layered resist structure and manufacturing method of semiconductor device 失效
    半导体器件的多层抗蚀剂结构及其制造方法

    公开(公告)号：US06887649B2

    公开(公告)日：2005-05-03

    申请号：US10092310

    申请日：2002-03-07

    申请人： Akihiko Otoguro ,  Satoshi Takechi

    发明人： Akihiko Otoguro ,  Satoshi Takechi

    IPC分类号： G03F7/075 ,  G03F7/11 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/11 ,  H01L21/0275 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  Y10S430/146

    摘要： There are provided steps of forming a lower resist layer on a patterning objective layer, forming an organic intermediate layer made of organic material, that contains no Si—O bond in its structure, on the lower resist layer, forming an upper resist layer made of alicyclic resin on the organic intermediate layer, forming a pattern by exposing/developing the upper resist layer, transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask, transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask, and etching the patterning objective layer while using the lower resist layer as a mask. Accordingly, a semiconductor device manufacturing method containing patterning steps employing a multi-layered resist structure, that is capable of suppressing deformation of the pattern of the upper resist layer formed of alicyclic compound, can be provided.

    摘要翻译： 提供了在图案化目标层上形成下抗蚀剂层的步骤，在下抗蚀剂层上形成由下列抗蚀剂层构成的由有机材料构成的有机中间层，其中不包含Si-O键，形成上层抗蚀剂层 在有机中间层上形成脂环族树脂，通过曝光/显影上抗蚀剂层形成图案，通过蚀刻有机中间层将上抗蚀剂层的图案转印到有机中间层上，同时使用上抗蚀剂层作为掩模，转印 通过在使用有机中间层作为掩模的同时蚀刻下抗蚀剂层而将有机中间层的图案涂覆到下抗蚀剂层上，并且在使用下抗蚀剂层作为掩模的同时蚀刻图案化目标层。 因此，可以提供包含能够抑制由脂环族化合物形成的上抗蚀剂层的图案的变形的采用多层抗蚀剂结构的图案化步骤的半导体器件制造方法。

    Method for forming resist patterns by using an ammonium or morpholine compound as a developer
    6.
    发明授权
    Method for forming resist patterns by using an ammonium or morpholine compound as a developer 失效
    通过使用铵或吗啉化合物作为显影剂形成抗蚀剂图案的方法

    公开(公告)号：US5879851A

    公开(公告)日：1999-03-09

    申请号：US718515

    申请日：1996-10-08

    申请人： Makoto Takahashi ,  Satoshi Takechi

    发明人： Makoto Takahashi ,  Satoshi Takechi

    IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027 ,  G03C5/18

    CPC分类号： G03F7/322

    摘要： A method for forming resist patterns comprising coating a resist comprising a polymeric or copolymeric compound having a repeating unit comprising a protected alkali-soluble group in which the protecting group is cleaved with an acid so that the compound is made alkali-soluble, and an acid generator capable of generating an acid upon the radiation exposure to a substrate to be fabricated, then pre-baking the formed resist film, successively selectively exposing the resist film, thereafter, developing a latent image with a developer containing an aqueous or alcoholic solution of a specified ammonium compound or morpholine compound. According to this method, crack formation and peeling of a pattern can be suppressed at the time of forming resist patterns.

    摘要翻译： PCT No.PCT / JP96 / 00295 Sec。 371日期1996年10月8日第 102（e）日期1996年10月8日PCT 1996年2月9日PCT PCT。 公开号WO96 / 24888 日期1996年8月15日一种形成抗蚀剂图案的方法，包括涂覆抗蚀剂，该抗蚀剂包括具有重复单元的聚合物或共聚合物，该重复单元包含被保护基团与酸分解的保护的碱溶性基团， 能够在放射线照射到要制造的基板上时产生酸的酸发生剂，然后预先烘烤形成的抗蚀剂膜，依次选择性地暴露抗蚀剂膜，然后用含有水溶液的显影剂显影潜像 或特定的铵化合物或吗啉化合物的醇溶液。 根据该方法，在形成抗蚀剂图案时可以抑制图案的裂纹形成和剥离。

    Chemically amplified resist material and process for the formation of resist patterns
    9.
    发明授权
    Chemically amplified resist material and process for the formation of resist patterns 失效
    化学放大抗蚀剂材料和形成抗蚀剂图案的工艺

    公开(公告)号：US06207342B1

    公开(公告)日：2001-03-27

    申请号：US09065567

    申请日：1998-04-24

    申请人： Satoshi Takechi ,  Isamu Hanyu

    发明人： Satoshi Takechi ,  Isamu Hanyu

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111

    摘要： Chemically amplified resist material which comprises: I. an acid-sensitive terpolymer produced upon copolymerization of (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group, (ii) a second monomer unit having a lactone structure, and (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit; and II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation, and the process for forming resist patterns using this resist material.

    摘要翻译： 化学扩增抗蚀剂材料，其包含：I.一种酸敏感性三聚物，其通过（i）具有包含被含有脂环烃的保护基团保护的碱溶性基团的结构的第一单体单元共聚制备，（ii）第二单体单元 具有内酯结构的单体单元，和（iii）具有含有不同于所述第一单体单元的保护基保护的碱溶性基团的结构的第三单体单元; 和II。 能够在曝光于图案化辐射时产生酸的光致酸产生剂，以及使用该抗蚀剂材料形成抗蚀剂图案的方法。

    Chemically amplified resist compositions and process for the formation of resist patterns
    10.
    发明授权
    Chemically amplified resist compositions and process for the formation of resist patterns 失效
    化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06013416A

    公开(公告)日：2000-01-11

    申请号：US673739

    申请日：1996-06-27

    申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

    发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

    摘要翻译： 碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割 由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂 产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。