公开(公告)号：US06943041B2

公开(公告)日：2005-09-13

申请号：US10719412

申请日：2003-11-21

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.

摘要翻译： 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。

公开(公告)号：US06917492B2

公开(公告)日：2005-07-12

申请号：US10611224

申请日：2003-06-27

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49034

摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0

摘要翻译： 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素， 磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0

公开(公告)号：US06708390B2

公开(公告)日：2004-03-23

申请号：US10421989

申请日：2003-04-23

申请人： Yoshio Kawashima ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita ,  Yasunori Morinaga

发明人： Yoshio Kawashima ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita ,  Yasunori Morinaga

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

摘要： The present invention provides a magnetoresistive element that can suppress the characteristic degradation even after high-temperature heat treatment, specifically at 400° C. to 450° C. This element is manufactured by a method that includes the following processes in the indicated order: a film formation process for forming at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer on a substrate; a preheat process at 330° C. to 380° C. for not less than 60 minutes; and a heat treatment process at 400° C. to 450° C. This element has a resistance value that changes with a change in relative angle formed by the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer.

摘要翻译： 本发明提供即使在高温热处理后，特别是在400℃〜450℃也能够抑制特性劣化的磁阻元件。该元件通过以下顺序制造方法：以下述方式制造：a 用于在基板上形成至少第一铁磁层，第二铁磁层和非磁性层的成膜工艺; 在330℃至380℃下预热不少于60分钟; 以及在400℃至450℃的热处理过程。该元件具有随着由第一铁磁层和第二铁磁层的磁化方向形成的相对角度的变化而变化的电阻值。

公开(公告)号：US06950333B2

公开(公告)日：2005-09-27

申请号：US10695731

申请日：2003-10-24

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita ,  Yoshio Kawashima

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita ,  Yoshio Kawashima

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22

CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/228

摘要： A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.

摘要翻译： 本发明的磁存储器包括两层或多层存储层和两层或多层在层的厚度方向上层叠的隧道层。 两个或更多个存储器层串联电连接。 一组第一层包括从两个或更多个存储器层中选择的至少一个层。 一组第二层包括从两个或更多个存储器层中选择的至少一个层。 由第一层组中的磁化反转引起的电阻变化与由第二层组中的磁化反转引起的电阻变化不同。

公开(公告)号：US06839273B2

公开(公告)日：2005-01-04

申请号：US10783286

申请日：2004-02-20

申请人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

发明人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

IPC分类号： G11B5/39 ,  G11C11/15 ,  H01F10/18 ,  H01F10/193 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  G11C11/14

CPC分类号： H01F10/1936 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F1/405 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

摘要： A magnetic switching device is provided, which has a configuration different from that of a conventional example and is capable of enhancing an energy conversion efficiency for changing the magnetized state of a magnetic substance. A magnetic memory using the magnetic switching device also is provided The magnetic switching device includes a magnetic layer, a transition layer magnetically coupled to the magnetic layer, and a carrier supplier including at least one selected from metal and a semiconductor. The transition layer and the carrier supplier are placed in such a manner that a voltage can be applied between the transition layer and the carrier supplier. The transition layer undergoes a non-ferromagnetism—ferromagnetism transition by the application of a voltage, and the magnetized state of the magnetic layer is changed by the transition of the transition layer.

摘要翻译： 提供一种磁性开关装置，其具有与常规示例不同的配置，并且能够提高用于改变磁性物质的磁化状态的能量转换效率。 还提供了使用磁开关装置的磁存储器。磁开关装置包括磁性层，磁耦合到磁性层的过渡层和包括从金属和半导体中选择的至少一种的载体供体。 过渡层和载体供给器的放置方式是可以在过渡层和载体供应者之间施加电压。 过渡层通过施加电压而经历非铁磁 - 铁磁转变，并且通过过渡层的转变改变磁性层的磁化状态。

公开(公告)号：US06798620B2

公开(公告)日：2004-09-28

申请号：US10441794

申请日：2003-05-20

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Hideaki Adachi ,  Kenji Iijima ,  Hiroshi Sakakima ,  Yasunari Sugita

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Hideaki Adachi ,  Kenji Iijima ,  Hiroshi Sakakima ,  Yasunari Sugita

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3295

摘要： A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.

摘要翻译： 一种磁头，包括用作第一电极的磁性基板，在该磁性基板的一部分表面上形成的层间绝缘层，覆盖多层膜的侧表面的多层膜， 形成在多层膜和层间绝缘层的表面上的引导件，形成在引导件的表面上的非磁性导电层和形成在非磁性导电层的表面上的第二电极，其中 多层膜包括形成在磁性基板的表面的一部分上并包括固定层的第一磁性层和包括形成在第一磁性层的表面上的非磁性层的第二磁性层， 层形成在非磁性层的表面上。

公开(公告)号：US20050135020A1

公开(公告)日：2005-06-23

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2c,X3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， X 1，X 3是选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种 ，Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W中的至少一种， Re，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < = a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US06861940B2

公开(公告)日：2005-03-01

申请号：US10732053

申请日：2003-12-10

申请人： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

发明人： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC分类号： G01R33/09 ,  H01F10/32 ,  H01C7/04

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272

摘要： A magnetoresistive element of the present invention includes a multilayer structure that includes a non-magnetic layer (3) and a pair of ferromagnetic layers (1, 2) stacked on both sides of the non-magnetic layer (3). A resistance value differs depending on a relative angle between the magnetization directions of the ferromagnetic layers (1, 2) at the interfaces with the non-magnetic layer (3). The composition of at least one of the ferromagnetic layers (1, 2) in a range of 2 nm from the interface with the non-magnetic layer (3) is expressed by (MxOy)1-zZz, where Z is at least one element selected from the group consisting of Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au, M is at least one element selected from the group consisting of elements other than Z and O and includes a ferromagnetic metal, and x, y, and z satisfy 0.33

摘要翻译： 本发明的磁阻元件包括层叠在非磁性层（3）的两侧的非磁性层（3）和一对铁磁体层（1,2）的多层结构体。 电阻值根据与非磁性层（3）的界面处的铁磁层（1,2）的磁化方向之间的相对角度而不同。 从与非磁性层（3）的界面在2nm范围内的铁磁层（1,2）中的至少一个的组成由（M×Oy）1-zZz表示，其中Z是至少一个元素 选自由Ru，Os，Rh，Ir，Pd，Pt，Cu，Ag和Au组成的组中的至少一种元素，M是选自Z和O以外的元素中的至少一种元素，并且包括铁磁性金属，以及 x，y和z满足0.33

公开(公告)号：US06842317B2

公开(公告)日：2005-01-11

申请号：US10692362

申请日：2003-10-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01F10/14

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a multilayer film configuration including: a tunnel insulation layer; and a pair of magnetic layers that are laminated with the tunnel insulation layer interposed therebetween. A resistance value of the magnetoresistive element varies with a relative angle between magnetic orientations of both of the magnetic layers, and at least one of the magnetic layers includes a magnetic film having a thermal expansion coefficient not greater than a value obtained by adding 2×10−6/K to a thermal expansion coefficient of the tunnel insulation layer. The thus configured magnetoresistive element can exert excellent thermal stability. The use of such a magnetoresistive element can realize a magnetic head, a magnetic memory element and a magnetic recording apparatus with excellent thermal stability.

摘要翻译： 磁阻元件包括多层膜构造，包括：隧道绝缘层; 以及与隧道绝缘层层叠的一对磁性层。 磁阻元件的电阻值随着两个磁性层的磁取向之间的相对角度而变化，并且至少一个磁性层包括热膨胀系数不大于通过加入2×10 -3 - 6> / K对隧道绝缘层的热膨胀系数。 这样配置的磁阻元件可以发挥优异的热稳定性。 使用这种磁阻元件可以实现具有优异的热稳定性的磁头，磁存储元件和磁记录装置。

公开(公告)号：US07079361B2

公开(公告)日：2006-07-18

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， （X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种 ，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。