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    Patterned photo cathode and its fabrication method for electron image projection
    3.
    发明授权
    Patterned photo cathode and its fabrication method for electron image projection 失效
    图形照相阴影及其电子图像投影的制作方法

    公开(公告)号：US5118952A

    公开(公告)日：1992-06-02

    申请号：US605008

    申请日：1990-10-24

    申请人： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Jinko Kudou ,  Akio Yamada

    发明人： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Jinko Kudou ,  Akio Yamada

    IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J1/34 ,  H01J9/12 ,  H01J37/317 ,  H01L21/027

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J1/34 ,  H01J37/3175 ,  H01J9/12 ,  H01J2201/3425 ,  H01J2201/3426 ,  H01J2237/31779

    摘要： A photo cathode used for an electron image projection apparatus has a silver layer as a photo electric material and a layer of an alkali metal or alkaline earth metal, such as cesium, coated on the silver layer. The cesium is as thick as several atomic layers, and reduces the work function of the photo cathode. The silver layer may be coated all over a substrate, and portions other than the cathode may be masked by a non photoelectric metal, or non transparent metal, such as platinum. Or, the silver layer may be patterned on the layer of a non photoelectric metal coated on the substrate. An excitation light to the photo cathode may be irradiated onto the surface of the silver, or onto the back of the silver layer through a transparent substrate. After depositing the cesium layer on the silver, the layers are heated in a vacuum at 50.degree. to 200.degree. C., thus a contrast ratio, i.e. ratio of electron current from the cathode and from the non cathode portion, is achieved as high as 20. This low temperature heat processing prevents lateral diffusion of the mask metal, resulting in a sharp edge of the cathode pattern. Silver and the cesium thereon are not susceptive to open air atmosphere, thus allowing long life and easy handling for an efficient lithography processing. The low absorption edge of the silver allows the use of a high pressure mercury lamp whose light is easily focused by a lens.

    Photo-cathode image projection apparatus for patterning a semiconductor device
    4.
    发明授权
    Photo-cathode image projection apparatus for patterning a semiconductor device 失效
    用于图案化半导体器件的光阴图像投影设备

    公开(公告)号：US5023462A

    公开(公告)日：1991-06-11

    申请号：US327728

    申请日：1989-03-23

    申请人： Akio Yamada ,  Kiichi Sakamoto ,  Jinko Kudou ,  Hiroshi Yasuda

    发明人： Akio Yamada ,  Kiichi Sakamoto ,  Jinko Kudou ,  Hiroshi Yasuda

    IPC分类号： G03F7/20 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70375 ,  G03F7/70725 ,  H01J37/3175 ,  H01J2237/0206 ,  H01J2237/0262 ,  H01J2237/153 ,  H01J2237/303 ,  H01J2237/30455 ,  H01J2237/31779

    摘要： A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at an electrical potential level that is identical to the electrical potential level of the stage, so that the object supported on the stage is electrically shielded from the photoelectron mask by the acceleration electrode.

    Charged particle beam lithography system and a method thereof
    7.
    发明授权
    Charged particle beam lithography system and a method thereof 失效
    带电粒子束光刻系统及其方法

    公开(公告)号：US5051556A

    公开(公告)日：1991-09-24

    申请号：US429500

    申请日：1989-10-31

    申请人： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Akio Yamada

    发明人： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Akio Yamada

    IPC分类号： H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/15 ,  H01J2237/30411 ,  H01J2237/31776

    摘要： A charged particle beam lithography system comprises a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is moved over the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask, wherein the addressing system comprises an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through selected one of the plurality of apertures except for the predetermined aperture.

    摘要翻译： 带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的束形成孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交叉点 光轴，第二聚焦系统，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间，用于偏转电子束的光束偏转系统，使得光束在该光轴上移动 物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束通过掩模上的选定孔径， 其中寻址系统包括用于可变成形带电粒子束和电磁体的静电偏转器 用于偏转带电粒子束，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的选定的一个孔。