公开(公告)号：US5522934A

公开(公告)日：1996-06-04

申请号：US428363

申请日：1995-04-25

申请人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.

摘要翻译： 一种等离子体处理装置，包括：用于将处理容器内要被处理的目标表面支撑待加工的目标物体的基座，用于将目标物体的处理气体供给到处理容器中的多个处理气体供给喷嘴， RF线圈，用于在处理容器中产生电磁波，以产生处理气体的等离子体。 供给喷嘴具有在处理容器中与目标物体的目标表面大致垂直的方向上形成有多个等级的处理气体注入孔，位于上层的气体注入孔更靠近目标物的中心 表面比位于较低水平的气体注入孔。

公开(公告)号：US5531834A

公开(公告)日：1996-07-02

申请号：US273878

申请日：1994-07-12

申请人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata ,  Akira Suzuki

发明人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata ,  Akira Suzuki

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/3105 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/3266 ,  H01L21/31051

摘要： A plasma film forming apparatus comprises gas supply means for feeding a processing gas into a processing chamber, a first electrode opposed to an object of processing in the processing chamber, a second electrode in the form of a flat coil facing the first electrode across the object of processing, pressure regulating means for keeping the pressure in the processing chamber at 0.1 Torr or below, heating means for heating the object of processing to a predetermined temperature, and application means for applying radio-frequency power between the first and second electrodes, whereby the processing gas is converted into a plasma such that a film is formed on the surface of the object of processing through reaction of ions or active seeds in the plasma. When radio-frequency power is applied between the pair of electrodes, a radio-frequency electric field is formed. Since one of the electrodes is the flat coil, however, a magnetic field is formed. As a result, the processing gas is converted into a plasma by electrical and magnetic energies. Accordingly, the processing gas can be changed into a plasma under low pressure, and a high-density plasma can be generated even under a pressure of 0.1 Torr or below. Thus, the efficiency of ion application to the surface of the object of processing is high, and the effect of impurity extraction is great.

摘要翻译： 等离子体膜形成装置包括用于将处理气体供给到处理室中的气体供给装置，与处理室中的处理对象相对的第一电极，与面对第一电极的平面线圈形式的第二电极 处理用的压力调节机构，将处理室内的压力保持在0.1Torr以下，将加工对象物加热到预定温度的加热装置，以及在第一和第二电极之间施加射频功率的施加装置，由此 处理气体转化为等离子体，使得通过等离子体中的离子或活性种子的反应在加工对象的表面上形成膜。 当在一对电极之间施加射频电力时，形成射频电场。 然而，由于电极中的一个是扁平线圈，所以形成磁场。 结果，处理气体通过电和能量转换成等离子体。 因此，处理气体可以在低压下变为等离子体，即使在0.1Torr以下的压力下也能够产生高密度的等离子体。 因此，离子施加到加工对象表面的效率高，杂质提取的效果大。

公开(公告)号：US5476182A

公开(公告)日：1995-12-19

申请号：US117683

申请日：1993-09-08

申请人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H05H1/46 ,  H01J2237/3341 ,  H01J2237/3345

摘要： An etching apparatus for etching an insulating film of an object to be processed having the insulating film comprises a first chamber into which an inert gas is introduced, a plasma generating section for converting the inert gas to a plasma in the first chamber, a second chamber, which communicates with the first chamber, for receiving a reactive gas for etching the insulating film and generating radicals of the reactive gas therein, and a support electrode for supporting the object to be processed in the second chamber and attracting ions in the plasma of the inert gas to the object to be processed. The radicals is generated when the reactive gas introduced into the second chamber is excited by the plasma of the inert gas diffused from the first chamber to the second chamber. The insulating film and the radicals react with each other by the assist of the ions of the inert gas, thereby etching the insulating film.

摘要翻译： 用于蚀刻具有绝缘膜的待处理物体的绝缘膜的蚀刻装置包括：引入惰性气体的第一室，用于将惰性气体转换成第一室中的等离子体的等离子体产生部，第二室 ，其与第一室连通，用于接收用于蚀刻绝缘膜并在其中产生反应气体的自由基的反应气体;以及支撑电极，用于在第二室中支撑待处理物体并吸引等离子体中的离子 惰性气体被加工物体。 当引入第二室的反应气体被从第一室扩散到第二室的惰性气体的等离子体激发时，产生自由基。 绝缘膜和自由基通过惰性气体的离子的帮助彼此反应，从而蚀刻绝缘膜。

公开(公告)号：USRE40963E1

公开(公告)日：2009-11-10

申请号：US10625669

申请日：2003-07-24

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H05H1/16

CPC分类号： H01J37/321 ,  H05H1/46

摘要： A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.

摘要翻译： 一种用于通过使感应电场成形来实现基板上的高度均匀的等离子体密度的方法，包括以下步骤：将基板定位在处理室中，向在处理室中产生感应电场的螺旋天线提供高频功率，产生 处理室中的等离子体，并且相对于衬底对电场进行成形以实现正在处理的衬底上的等离子体的均匀分布。

公开(公告)号：USRE39020E1

公开(公告)日：2006-03-21

申请号：US09478370

申请日：2000-02-16

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

摘要翻译： 用于在LCD基板上形成硅膜的等离子体CVD装置包括通过石英隔板将其分为工艺和上室的容器。 安装有基板的工作台布置在处理室中，并且施加高频电位的下电极布置在工作台中。 第一下供应头和第二上供应头布置在处理室中的分隔板和工作台之间。 SiH 4和H 2气体，He气体通过第一和第二供应头供应。 He气被转化为等离子体，而SiH 4和H 2气体被等离子体激发并分解。 两个线圈布置在上部腔室中，并且高频电压施加到线圈以产生电磁场以诱导He气体转化为等离子体。 施加到线圈的高频电压的相位相同，并且流过线圈相邻部分的电流方向相同。

公开(公告)号：US6136139A

公开(公告)日：2000-10-24

申请号：US252004

申请日：1999-02-18

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H01J37/32 ,  H05H1/18 ,  H05H1/46 ,  H05H1/00

CPC分类号： H05H1/46 ,  H01J37/321

摘要： Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

公开(公告)号：US5792261A

公开(公告)日：1998-08-11

申请号：US624102

申请日：1996-03-29

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

公开(公告)号：US5529630A

公开(公告)日：1996-06-25

申请号：US385929

申请日：1995-02-09

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02422 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686 ,  G02F1/13454 ,  Y10S148/006 ,  Y10S148/09 ,  Y10S148/15

摘要： An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.

摘要翻译： 通过CVD法在玻璃基板上形成非晶硅膜，然后将非晶硅膜的岛状区域变化为多个多晶硅区域，这些多晶硅区域以规定的间隔设置成一条线并相互隔开 使用激光束照射部分间歇地将具有与岛状区域相同的尺寸的激光脉冲照射到非晶硅膜上。 通过蚀刻和成膜处理形成包括岛状区域作为半导体区域的开关元件，构成驱动电路部。 该部分被分成用于驱动形成在像素区域中的薄膜晶体管的栅极驱动电路部分和源极驱动电路部分。

公开(公告)号：US06350347B1

公开(公告)日：2002-02-26

申请号：US09640194

申请日：2000-08-17

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H01L2100

CPC分类号： H05H1/46 ,  H01J37/321

摘要： Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

摘要翻译： 公开了一种等离子体处理装置，包括：处理室，其中配置有待加工物体;处理气体导入管，用于将处理气体引入处理室;天线，布置在处理室外表面上的该区域 其被定位成对应于待处理物体，绝缘体插入在天线和处理室之间，并且高频功率被提供给天线，以便在被处理物体附近形成感应电场;以及 布置成至少部分地与天线重叠的顺磁部件。

公开(公告)号：USRE36371E

公开(公告)日：1999-11-02

申请号：US764205

申请日：1996-12-13

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  C23C16/56 ,  G02F1/1362 ,  H01L21/20 ,  B05D3/06 ,  H01L21/461 ,  H01L21/306

CPC分类号： C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasam CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.

摘要翻译： 在制造LCD的过程中形成多晶硅膜的方法中，通过等离子体CVD在玻璃基板上形成氢化的非晶硅膜，作为LCD的像素部分和驱动单元。 在作为驱动器单元的区域上的膜的选定区域上照射激光束。 激光束的能量被设定为使得膜中的氢气不会使膜结晶而被排出并损坏膜。 激光束的能量逐渐增加，逐渐从膜中排出氢。 最终将激光束的能量设定为使得膜转变为多晶硅膜。 非晶硅膜可以多结晶而不会通过氢气的排出而损坏膜。