公开(公告)号：US5522934A

公开(公告)日：1996-06-04

申请号：US428363

申请日：1995-04-25

申请人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Akira Suzuki ,  Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.

摘要翻译： 一种等离子体处理装置，包括：用于将处理容器内要被处理的目标表面支撑待加工的目标物体的基座，用于将目标物体的处理气体供给到处理容器中的多个处理气体供给喷嘴， RF线圈，用于在处理容器中产生电磁波，以产生处理气体的等离子体。 供给喷嘴具有在处理容器中与目标物体的目标表面大致垂直的方向上形成有多个等级的处理气体注入孔，位于上层的气体注入孔更靠近目标物的中心 表面比位于较低水平的气体注入孔。

公开(公告)号：US5531834A

公开(公告)日：1996-07-02

申请号：US273878

申请日：1994-07-12

申请人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata ,  Akira Suzuki

发明人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata ,  Akira Suzuki

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/3105 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/3266 ,  H01L21/31051

摘要： A plasma film forming apparatus comprises gas supply means for feeding a processing gas into a processing chamber, a first electrode opposed to an object of processing in the processing chamber, a second electrode in the form of a flat coil facing the first electrode across the object of processing, pressure regulating means for keeping the pressure in the processing chamber at 0.1 Torr or below, heating means for heating the object of processing to a predetermined temperature, and application means for applying radio-frequency power between the first and second electrodes, whereby the processing gas is converted into a plasma such that a film is formed on the surface of the object of processing through reaction of ions or active seeds in the plasma. When radio-frequency power is applied between the pair of electrodes, a radio-frequency electric field is formed. Since one of the electrodes is the flat coil, however, a magnetic field is formed. As a result, the processing gas is converted into a plasma by electrical and magnetic energies. Accordingly, the processing gas can be changed into a plasma under low pressure, and a high-density plasma can be generated even under a pressure of 0.1 Torr or below. Thus, the efficiency of ion application to the surface of the object of processing is high, and the effect of impurity extraction is great.

摘要翻译： 等离子体膜形成装置包括用于将处理气体供给到处理室中的气体供给装置，与处理室中的处理对象相对的第一电极，与面对第一电极的平面线圈形式的第二电极 处理用的压力调节机构，将处理室内的压力保持在0.1Torr以下，将加工对象物加热到预定温度的加热装置，以及在第一和第二电极之间施加射频功率的施加装置，由此 处理气体转化为等离子体，使得通过等离子体中的离子或活性种子的反应在加工对象的表面上形成膜。 当在一对电极之间施加射频电力时，形成射频电场。 然而，由于电极中的一个是扁平线圈，所以形成磁场。 结果，处理气体通过电和能量转换成等离子体。 因此，处理气体可以在低压下变为等离子体，即使在0.1Torr以下的压力下也能够产生高密度的等离子体。 因此，离子施加到加工对象表面的效率高，杂质提取的效果大。

公开(公告)号：US5476182A

公开(公告)日：1995-12-19

申请号：US117683

申请日：1993-09-08

申请人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

发明人： Shuichi Ishizuka ,  Kohei Kawamura ,  Jiro Hata

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H05H1/46 ,  H01J2237/3341 ,  H01J2237/3345

摘要： An etching apparatus for etching an insulating film of an object to be processed having the insulating film comprises a first chamber into which an inert gas is introduced, a plasma generating section for converting the inert gas to a plasma in the first chamber, a second chamber, which communicates with the first chamber, for receiving a reactive gas for etching the insulating film and generating radicals of the reactive gas therein, and a support electrode for supporting the object to be processed in the second chamber and attracting ions in the plasma of the inert gas to the object to be processed. The radicals is generated when the reactive gas introduced into the second chamber is excited by the plasma of the inert gas diffused from the first chamber to the second chamber. The insulating film and the radicals react with each other by the assist of the ions of the inert gas, thereby etching the insulating film.

摘要翻译： 用于蚀刻具有绝缘膜的待处理物体的绝缘膜的蚀刻装置包括：引入惰性气体的第一室，用于将惰性气体转换成第一室中的等离子体的等离子体产生部，第二室 ，其与第一室连通，用于接收用于蚀刻绝缘膜并在其中产生反应气体的自由基的反应气体;以及支撑电极，用于在第二室中支撑待处理物体并吸引等离子体中的离子 惰性气体被加工物体。 当引入第二室的反应气体被从第一室扩散到第二室的惰性气体的等离子体激发时，产生自由基。 绝缘膜和自由基通过惰性气体的离子的帮助彼此反应，从而蚀刻绝缘膜。

公开(公告)号：US08197913B2

公开(公告)日：2012-06-12

申请号：US12008770

申请日：2008-01-14

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H05H1/24

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

公开(公告)号：US20100032844A1

公开(公告)日：2010-02-11

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/48

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。

公开(公告)号：US20100032838A1

公开(公告)日：2010-02-11

申请号：US12516862

申请日：2007-11-30

申请人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L23/532 ,  H01L21/314 ,  C09D1/00

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

公开(公告)号：US20070243377A1

公开(公告)日：2007-10-18

申请号：US11632604

申请日：2005-07-08

申请人： Sohei Nishida ,  Kohei Kawamura ,  Toshiaki Ebisu

发明人： Sohei Nishida ,  Kohei Kawamura ,  Toshiaki Ebisu

IPC分类号： D02G3/00 ,  D02G3/02

CPC分类号： D01F6/54 ,  C08F220/14 ,  C08F220/44 ,  C08F220/58 ,  C08F228/02 ,  D01F6/48 ,  Y10T428/2913 ,  Y10T428/2929 ,  Y10T428/2931 ,  Y10T442/64

摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.

摘要翻译： 根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物 的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％ 丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量 ）为100重量份。 这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。

公开(公告)号：US20070077737A1

公开(公告)日：2007-04-05

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L21/26 ,  H01L21/42 ,  H05H1/24

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而 在半导体晶片（W）上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。

公开(公告)号：US20060068104A1

公开(公告)日：2006-03-30

申请号：US11231962

申请日：2005-09-22

申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

公开(公告)号：US20050002590A1

公开(公告)日：2005-01-06

申请号：US10836217

申请日：2004-05-03

申请人： Kohei Kawamura

发明人： Kohei Kawamura

IPC分类号： G06T11/60 ,  G06F3/12 ,  G06T3/00 ,  G06T3/40 ,  G06T3/60 ,  G06T5/50 ,  H04N1/00 ,  H04N1/32 ,  H04N1/387 ,  H04N1/393 ,  H04N5/76 ,  H04N5/91 ,  H04N7/173 ,  H04N21/2668 ,  H04N21/274 ,  G06K9/00

CPC分类号： H04N1/32 ,  H04N1/00127 ,  H04N1/00132

摘要： An information processing method for providing a communication terminal with a service. When editing in a lump of a plurality of held data to which the services are to be applied is received an instruction from the communication terminal, data capable of undergoing the accepted editing is automatically selected from the held data and the selected data is edited. With regard to data automatically judged to be incapable of undergoing the accepted editing, information that reports exclusion of this data from editing is transmitted to the communication terminal and is displayed thereby. That is, when plural items of held data are edited simultaneously, data not suited to this editing is excluded automatically, thereby enhancing user convenience in terms of operation. In addition, the fact that data not suited to editing has not been edited is clearly indicated to the user to prevent miss-recognition by the user.

摘要翻译： 一种用于向通信终端提供服务的信息处理方法。 从通信终端接收到要对其应用服务的多个保持数据的块中的编辑时，从保持的数据中自动选择能够接受接受的编辑的数据，并编辑所选择的数据。 关于自动判断为不能进行接受编辑的数据，报告将该数据排除在编辑之外的信息被发送到通信终端并被显示。 也就是说，当多个保持数据项被同时编辑时，自动排除不适合于该编辑的数据，从而提高用户操作方便性。 此外，清楚地向用户指示不适合于编辑的数据的事实，以防止用户的错误识别。