-
公开(公告)号：US4888781A
公开(公告)日：1989-12-19
申请号：US304806
申请日：1989-01-31
申请人： Etsuji Omura , Katsuhiko Goto , Shogo Takahashi , Harumi Namba , Akira Takemoto
发明人： Etsuji Omura , Katsuhiko Goto , Shogo Takahashi , Harumi Namba , Akira Takemoto
CPC分类号： B82Y20/00 , H01S5/0422 , H01S5/227 , H01S5/34 , H01S5/0425 , H01S5/2059 , Y10S148/072 , Y10S148/095 , Y10S148/16
摘要： A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow the semiconductor laser to oscillate in a stable manner and with low threshold current. The semiconductor laser is provided with a portion of the surface of the upper cladding layer located above the disordered active layer regions electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe electrode can be of a width larger than that of the central stripe itself.
摘要翻译： 适用于与其他电子电路集成的掩埋异质结半导体激光器及其制造方法，其中有源区域的中心条纹的宽度可以被减小超过连接电极的物理尺寸限制，从而允许半导体激光器 以稳定的方式振荡并具有低阈值电流。 半导体激光器设置有上覆层的表面的位于与位于非无序中央条上方的上覆层电连接的无序有源层区域上方的部分。 结果，中心条状电极的宽度可以大于中央条纹本身的宽度。
-
公开(公告)号：US5228048A
公开(公告)日：1993-07-13
申请号：US830848
申请日：1992-02-04
申请人： Akira Takemoto , Etsuji Omura
发明人： Akira Takemoto , Etsuji Omura
CPC分类号： H01S5/227 , H01S5/0035 , H01S5/2275 , H01S5/2277
摘要： A semiconductor laser device includes a p type semiconductor substrate, an active layer having a smaller energy band gap than the p type semiconductor substrate and an n type semiconductor layer having a larger energy band gap than the active layer successively formed on the p type semiconductor substrate, a mesa formed by selectively etching the semiconductor substrate, active layer, and n type semiconductor layer, p-n-p layers having larger energy band gaps than the active layer and disposed at both sides of the mesa, a small energy band gap layer having a smaller energy band gap than the p type semiconductor substrate and disposed on the p-n-p layers, and an n type semiconductor layer disposed on the small energy band gap layer and on the n type semiconductor layer. The small energy band gap layers decrease the current flowing through the thyristor structure and are disposed close to the active region but in a different processing step from the formation of the active layer. A waveguide structure in which the active layer is surrounded by semiconductor layers having larger energy band gaps is realized.
摘要翻译： 半导体激光器件包括ap型半导体衬底，具有比p型半导体衬底更小的能带隙的有源层和具有比在p型半导体衬底上连续形成的有源层更大的能带隙的n型半导体层， 通过选择性蚀刻半导体衬底，有源层和n型半导体层形成的台面，具有比有源层更大的能带隙并且设置在台面两侧的pnp层，具有较小能带的小能带隙层 间隙比p型半导体衬底并且设置在pnp层上，n型半导体层设置在小能带隙层和n型半导体层上。 小能带隙层减小流过晶闸管结构的电流，并且设置成接近有源区，但是在与有源层的形成不同的处理步骤中。 实现了有源层被具有较大能带隙的半导体层包围的波导结构。
-
公开(公告)号：US4957879A
公开(公告)日：1990-09-18
申请号：US410896
申请日：1989-09-22
申请人： Etsuji Omura , Katsuhiko Goto , Shogo Takahashi , Harumi Namba , Akira Takemoto
发明人： Etsuji Omura , Katsuhiko Goto , Shogo Takahashi , Harumi Namba , Akira Takemoto
CPC分类号： B82Y20/00 , H01S5/0422 , H01S5/227 , H01S5/34 , H01S5/0425 , H01S5/2059 , Y10S148/072 , Y10S148/095 , Y10S148/16
摘要： A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow the semiconductor laser to oscillate in a stable manner and with low threshold current. The semiconductor laser is provided with a portion of the surface of the upper cladding layer located above the disordered active layer regions electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe electrode can be of a width larger than that of the central stripe itself.
-
公开(公告)号：US5519720A
公开(公告)日：1996-05-21
申请号：US177466
申请日：1994-01-05
申请人： Ryoichi Hirano , Etsuji Omura , Akira Takemoto , Kimio Shigihara
发明人： Ryoichi Hirano , Etsuji Omura , Akira Takemoto , Kimio Shigihara
CPC分类号： H01L33/483 , G02B6/4204 , H01L33/64 , H01S5/02212 , H01L2224/45139 , H01L2224/48091 , H01L33/62 , H01S5/02272 , H01S5/02284 , H01S5/024
摘要： A semiconductor light emitting device includes a semiconductor light emitting element mounted on a package stem via a radiating heatsink block, the light emitting point of the light emitting element being positioned on the central axis of the stem and at or near the center of mass of the heatsink block. Another light emitting device includes a light emitting element mounted on a stem via a heatsink block, the light emitting point of the element being positioned on the central axis of the stem with only a portion of a lower surface of the heatsink block close to the central axis of the stem attached to the stem. The movement of the light emitting point with temperature variations is suppressed. Another light emitting device includes a laser chip element mounted on a package stem via a heatsink block, the laser chip element being mounted on the heatsink block so that the emitted light forms an angle .theta. with a surface of the stem and the position and angle of the emitted light do not vary when the temperature changes.
摘要翻译： 半导体发光器件包括通过辐射散热块安装在封装主干上的半导体发光元件，发光元件的发光点位于杆的中心轴线上，并且位于或接近质心的中心 散热片 另一种发光器件包括通过散热块安装在杆上的发光元件，元件的发光点位于杆的中心轴线上，散热块的下表面的仅一部分靠近中心 杆的轴线连接到杆上。 抑制了具有温度变化的发光点的移动。 另一种发光器件包括通过散热块安装在封装主体上的激光芯片元件，激光芯片元件安装在散热块上，使发射的光与杆表面形成角度θ， 当温度变化时，发出的光不会变化。
-
公开(公告)号：US5763287A
公开(公告)日：1998-06-09
申请号：US593348
申请日：1996-01-29
CPC分类号： H01S5/026 , H01S3/005 , H01S5/005 , H01S5/2077 , Y10S148/095 , Y10S438/978
摘要： A method of making a semiconductor optical device, including an integrated laser diode and optical waveguide lens with a continuous resonator extending along a resonator length direction between a pair of resonator facets, includes forming a pair of dielectric films disposed on a surface of a substrate on which a semiconductor layer of the optical waveguide is to be grown, the dielectric films having a linear symmetry about a hypothetical line extending in the resonator length direction, having edges opposing each other and parallel to the hypothetical line, and widths perpendicular to the resonator length direction that gradually narrow toward one facet from a position in the resonator length direction of the films. A mask pattern that produces a precise layer thickness profile is easily designed.
摘要翻译： 一种制造半导体光学器件的方法，包括集成激光二极管和具有在一对谐振器面之间沿谐振器长度方向延伸的连续谐振器的光波导透镜，包括：形成一对电介质膜，该电介质膜设置在衬底的表面上 该光波导的半导体层将被生长，该电介质膜围绕在谐振器长度方向上延伸的假想线具有线性对称性，具有彼此相对并平行于假想线的边缘以及垂直于谐振器长度的宽度 从薄膜的谐振器长度方向的位置向一个小面逐渐变窄的方向。 产生精确的层厚度轮廓的掩模图案是容易设计的。
-
6.发明授权
公开(公告)号：US5659566A
公开(公告)日：1997-08-19
申请号：US321774
申请日：1994-10-12
申请人： Akira Takemoto
发明人： Akira Takemoto
CPC分类号： G02B6/4224 , G02B6/4204 , H01S5/02252 , G02B6/4227 , H01S5/02284
摘要： In a semiconductor laser module, a semiconductor laser element is disposed on a side surface of a submount perpendicular to a front surface of a pedestal. The semiconductor laser element, the submount, a lens, and an optical fiber are positioned on the front surface of the pedestal so that laser light emitted from the semiconductor laser element is applied through the lens to a prescribed portion of the optical fiber with high reliability. Positioning of the laser element in the direction perpendicular to the front surface of the pedestal is facilitated, and positioning accuracy is improved, resulting in a low-cost and high-performance semiconductor laser module.
摘要翻译： 在半导体激光器模块中，半导体激光元件设置在垂直于基座的前表面的基座的侧表面上。 半导体激光元件，底座，透镜和光纤位于基座的前表面上，使得从半导体激光元件发射的激光通过透镜被加到具有高可靠性的光纤的规定部分 。 激光元件在与基座的前表面垂直的方向上的定位变得容易，并且定位精度提高，导致低成本和高性能的半导体激光器模块。
-
公开(公告)号：US5143864A
公开(公告)日：1992-09-01
申请号：US737057
申请日：1991-07-29
CPC分类号： H01S5/1228 , H01S5/12 , Y10S148/095
摘要： A semiconductor laser device having an active layer sandwiched by semiconductor layers having larger energy band gaps than that of the active layer, includes a semiconductor absorption layer having an energy band gap no larger than that of the active layer and having a thickness periodically changing in the cavity length direction of the resonator, close to the active layer so that light which is generated at the active layer reaches the absorption layer, and a semiconductor refractive index matching layer, having a larger energy band gap than that of the active layer and a higher refractive index than those of the semiconductor layers sandwiching the active layer, to make the equivalent refractive indices in layer thickness direction substantially equal along the resonator direction.
摘要翻译： 具有由具有比有源层的能带隙大的能带隙的半导体层夹持的有源层的半导体激光器件包括：半导体吸收层，其能带隙不大于有源层的能带隙，并且具有在 谐振器的腔长度方向靠近有源层，使得在有源层处产生的光到达吸收层，并且半导体折射率匹配层具有比有源层更大的能带隙和更高的能量带隙 折射率高于夹持有源层的半导体层的折射率，以使层厚度方向上的等效折射率沿谐振器方向基本相等。
-
公开(公告)号：US5438208A
公开(公告)日：1995-08-01
申请号：US140502
申请日：1993-10-25
申请人： Akira Takemoto
发明人： Akira Takemoto
CPC分类号： H01S5/0264
摘要： An optical integrated circuit includes a laser diode emitting laser light and a photodiode detecting light emitted from the laser diode on the same semiconductor substrate but not colinear and a mirror optically coupling the laser diode with the photodiode. The axes of the laser diode and the photodiode are parallel. The mirror is parallel to a laser light emitting facet of the laser diode to couple the laser diode and the photodiode. Resonator facets of the laser diode are produced by cleaving, not etching, whereby an optical integrated circuit including a laser diode having high performance and high reliability is obtained.
摘要翻译： 光学集成电路包括激光二极管，发射激光和光电二极管，其检测在同一半导体衬底上但不是共线的激光二极管发射的光，以及将激光二极管与光电二极管光学耦合的镜。 激光二极管和光电二极管的轴线平行。 反射镜平行于激光二极管的激光发射小面以耦合激光二极管和光电二极管。 激光二极管的谐振器面是通过切割而不是蚀刻产生的，由此获得包括具有高性能和高可靠性的激光二极管的光学集成电路。
-
公开(公告)号：US5093835A
公开(公告)日：1992-03-03
申请号：US510839
申请日：1990-04-18
CPC分类号： H01S5/1228 , H01S5/12 , Y10S148/095
摘要： A semiconductor laser device having an active layer sandwiched by semiconductor layers having larger energy band gaps than that of the active layer, includes a semiconductor absorption layer having an energy band gap no larger than that of the active layer and having a thickness periodically changing in the cavity length direction of the resonator close to the active layer so that light which is generated at the active layer reaches the absorption layer, and a semiconductor refractive index matching layer having a larger energy band gap than that of the active layer and a higher refractive index than those of the semiconductor layers sandwiching the active layer to make the equivalent refractive indices in layer thickness direction substantially equal along the resonator direction.
摘要翻译： 具有由具有比有源层的能带隙大的能带隙的半导体层夹持的有源层的半导体激光器件包括：半导体吸收层，其能带隙不大于有源层的能带隙，并且具有在 谐振器的腔长度方向靠近有源层，使得在有源层处产生的光到达吸收层，并且具有比有源层的能带隙更大的能带隙和更高折射率的半导体折射率匹配层 夹着有源层的半导体层的厚度使得层厚度方向上的等效折射率沿着谐振器方向基本相等。
-
公开(公告)号：US07228841B2
公开(公告)日：2007-06-12
申请号：US11268331
申请日：2005-11-07
申请人： Akira Takemoto , Nobuhide Seo , Kazuho Douzono , Takuji Kawada
发明人： Akira Takemoto , Nobuhide Seo , Kazuho Douzono , Takuji Kawada
CPC分类号： B60W20/10 , B60K6/24 , B60K6/365 , B60K6/445 , B60W10/06 , B60W10/08 , B60W20/00 , B60W2710/0616 , B60W2710/0644 , F02D19/0615 , F02D19/0618 , F02D19/0623 , F02D19/0644 , F02D19/0692 , F02D29/02 , F02D41/0025 , F02D2200/701 , Y02T10/36 , Y02T10/6239 , Y02T10/6286 , Y02T10/6295 , Y10S903/93 , Y10T477/23
摘要： An internal combustion engine combusts a first fuel or a second fuel. A method for controlling the engine comprises supplying first fuel to at least one combustion chambers of the internal combustion engine, stopping the supply of the first fuel to the combustion chamber in response to an engine operating condition, and fueling with the second fuel to the at least one combustion chamber after a predetermined period, so as to maintain an engine speed within a predetermined range.
摘要翻译： 内燃机燃烧第一燃料或第二燃料。 用于控制发动机的方法包括将第一燃料供应到内燃机的至少一个燃烧室，停止响应于发动机运行状态向燃烧室供应第一燃料，并且将第二燃料加燃料送至燃烧室 至少一个燃烧室，在预定时间段之后，将发动机转速维持在预定范围内。
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.013 秒)
