公开(公告)号：US5519720A

公开(公告)日：1996-05-21

申请号：US177466

申请日：1994-01-05

申请人： Ryoichi Hirano ,  Etsuji Omura ,  Akira Takemoto ,  Kimio Shigihara

发明人： Ryoichi Hirano ,  Etsuji Omura ,  Akira Takemoto ,  Kimio Shigihara

IPC分类号： H01L21/52 ,  G02B6/42 ,  H01L23/36 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  H01S3/043 ,  H01S3/18

CPC分类号： H01L33/483 ,  G02B6/4204 ,  H01L33/64 ,  H01S5/02212 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L33/62 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/024

摘要： A semiconductor light emitting device includes a semiconductor light emitting element mounted on a package stem via a radiating heatsink block, the light emitting point of the light emitting element being positioned on the central axis of the stem and at or near the center of mass of the heatsink block. Another light emitting device includes a light emitting element mounted on a stem via a heatsink block, the light emitting point of the element being positioned on the central axis of the stem with only a portion of a lower surface of the heatsink block close to the central axis of the stem attached to the stem. The movement of the light emitting point with temperature variations is suppressed. Another light emitting device includes a laser chip element mounted on a package stem via a heatsink block, the laser chip element being mounted on the heatsink block so that the emitted light forms an angle .theta. with a surface of the stem and the position and angle of the emitted light do not vary when the temperature changes.

摘要翻译： 半导体发光器件包括通过辐射散热块安装在封装主干上的半导体发光元件，发光元件的发光点位于杆的中心轴线上，并且位于或接近质心的中心 散热片 另一种发光器件包括通过散热块安装在杆上的发光元件，元件的发光点位于杆的中心轴线上，散热块的下表面的仅一部分靠近中心 杆的轴线连接到杆上。 抑制了具有温度变化的发光点的移动。 另一种发光器件包括通过散热块安装在封装主体上的激光芯片元件，激光芯片元件安装在散热块上，使发射的光与杆表面形成角度θ， 当温度变化时，发出的光不会变化。

公开(公告)号：US4888781A

公开(公告)日：1989-12-19

申请号：US304806

申请日：1989-01-31

申请人： Etsuji Omura ,  Katsuhiko Goto ,  Shogo Takahashi ,  Harumi Namba ,  Akira Takemoto

发明人： Etsuji Omura ,  Katsuhiko Goto ,  Shogo Takahashi ,  Harumi Namba ,  Akira Takemoto

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/0422 ,  H01S5/227 ,  H01S5/34 ,  H01S5/0425 ,  H01S5/2059 ,  Y10S148/072 ,  Y10S148/095 ,  Y10S148/16

摘要： A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow the semiconductor laser to oscillate in a stable manner and with low threshold current. The semiconductor laser is provided with a portion of the surface of the upper cladding layer located above the disordered active layer regions electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe electrode can be of a width larger than that of the central stripe itself.

摘要翻译： 适用于与其他电子电路集成的掩埋异质结半导体激光器及其制造方法，其中有源区域的中心条纹的宽度可以被减小超过连接电极的物理尺寸限制，从而允许半导体激光器 以稳定的方式振荡并具有低阈值电流。 半导体激光器设置有上覆层的表面的位于与位于非无序中央条上方的上覆层电连接的无序有源层区域上方的部分。 结果，中心条状电极的宽度可以大于中央条纹本身的宽度。

公开(公告)号：US5228048A

公开(公告)日：1993-07-13

申请号：US830848

申请日：1992-02-04

申请人： Akira Takemoto ,  Etsuji Omura

发明人： Akira Takemoto ,  Etsuji Omura

IPC分类号： H01S5/00 ,  H01S5/227

CPC分类号： H01S5/227 ,  H01S5/0035 ,  H01S5/2275 ,  H01S5/2277

摘要： A semiconductor laser device includes a p type semiconductor substrate, an active layer having a smaller energy band gap than the p type semiconductor substrate and an n type semiconductor layer having a larger energy band gap than the active layer successively formed on the p type semiconductor substrate, a mesa formed by selectively etching the semiconductor substrate, active layer, and n type semiconductor layer, p-n-p layers having larger energy band gaps than the active layer and disposed at both sides of the mesa, a small energy band gap layer having a smaller energy band gap than the p type semiconductor substrate and disposed on the p-n-p layers, and an n type semiconductor layer disposed on the small energy band gap layer and on the n type semiconductor layer. The small energy band gap layers decrease the current flowing through the thyristor structure and are disposed close to the active region but in a different processing step from the formation of the active layer. A waveguide structure in which the active layer is surrounded by semiconductor layers having larger energy band gaps is realized.

摘要翻译： 半导体激光器件包括ap型半导体衬底，具有比p型半导体衬底更小的能带隙的有源层和具有比在p型半导体衬底上连续形成的有源层更大的能带隙的n型半导体层， 通过选择性蚀刻半导体衬底，有源层和n型半导体层形成的台面，具有比有源层更大的能带隙并且设置在台面两侧的pnp层，具有较小能带的小能带隙层 间隙比p型半导体衬底并且设置在pnp层上，n型半导体层设置在小能带隙层和n型半导体层上。 小能带隙层减小流过晶闸管结构的电流，并且设置成接近有源区，但是在与有源层的形成不同的处理步骤中。 实现了有源层被具有较大能带隙的半导体层包围的波导结构。

公开(公告)号：US4957879A

公开(公告)日：1990-09-18

申请号：US410896

申请日：1989-09-22

申请人： Etsuji Omura ,  Katsuhiko Goto ,  Shogo Takahashi ,  Harumi Namba ,  Akira Takemoto

发明人： Etsuji Omura ,  Katsuhiko Goto ,  Shogo Takahashi ,  Harumi Namba ,  Akira Takemoto

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/0422 ,  H01S5/227 ,  H01S5/34 ,  H01S5/0425 ,  H01S5/2059 ,  Y10S148/072 ,  Y10S148/095 ,  Y10S148/16

摘要： A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow the semiconductor laser to oscillate in a stable manner and with low threshold current. The semiconductor laser is provided with a portion of the surface of the upper cladding layer located above the disordered active layer regions electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe electrode can be of a width larger than that of the central stripe itself.

公开(公告)号：US4788161A

公开(公告)日：1988-11-29

申请号：US130547

申请日：1987-12-09

申请人： Katsuhiko Goto ,  Shogo Takahashi ,  Etsuji Omura

发明人： Katsuhiko Goto ,  Shogo Takahashi ,  Etsuji Omura

IPC分类号： H01L33/20 ,  H01L33/58 ,  H01L21/306

CPC分类号： H01L33/20

摘要： A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a predetermined depth reaching the lower cladding layer at a predetermined position of the wafer to produce an output end surface; a process of depositing photosensitive material in the groove; a process of producing a required number of lenses from the photosensitive material; and a process of dividing the wafer into a plurality of lens-appended end surface light emission type semiconductor devices.

摘要翻译： 一种制造端面光发射型半导体器件的方法，包括：在半导体衬底上制造下包层，有源层和上包层的工艺; 在晶片的预定位置处形成到达下包层的预定深度的条纹沟槽以产生输出端面的工艺; 将感光材料沉积在凹槽中的工艺; 从感光材料制造所需数量的透镜的过程; 以及将晶片分割成多个透镜附加端面发光型半导体器件的处理。

公开(公告)号：US5357124A

公开(公告)日：1994-10-18

申请号：US84952

申请日：1993-07-02

申请人： Kenichi Kajiwara ,  Satoshi Arimoto ,  Etsuji Omura

发明人： Kenichi Kajiwara ,  Satoshi Arimoto ,  Etsuji Omura

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/0045 ,  H01L33/0062

摘要： A superluminescent diode (SLD) includes a substrate, a double heterojunction structure including a first conductivity type first cladding layer, an undoped active layer, and a second conductivity type second cladding layer. A second conductivity type first diffused region having a stripe shape and a length extends from a front facet halfway to the rear facet through which current is injected into the active layer and a second conductivity type second diffused region spaced from the first diffused region extends through the second cladding layer and the active layer and into the first cladding layer between the first diffused region and the rear facet of the device. Even when operating at high light output power, light reflections are reduced so that the SLD operates with hardly any laser oscillation.

摘要翻译： 超发光二极管（SLD）包括基板，包括第一导电型第一包覆层，未掺杂有源层和第二导电型第二包覆层的双异质结结构。 具有条形形状和长度的第二导电类型的第一扩散区域从中间到后面的一个小面延伸，电流注入到有源层中，并且与第一扩散区域间隔开的第二导电类型的第二扩散区域延伸穿过 第二包覆层和有源层，并且进入第一扩散区域和器件的后面之间的第一包层。 即使在高光输出功率下工作时，也会减少光反射，使得SLD几乎不会发生激光振荡。

公开(公告)号：US5105240A

公开(公告)日：1992-04-14

申请号：US648512

申请日：1991-01-30

申请人： Etsuji Omura

发明人： Etsuji Omura

IPC分类号： G02F1/017 ,  G02F1/29 ,  G02F1/313 ,  G02F1/355

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/293 ,  G02F1/3133 ,  G02F1/3556 ,  G02F1/01716 ,  G02F2001/3135

摘要： A light-controlled semiconductor light coupler for altering the position of and modulating a signal light in response to the intensity of a control light includes a multiple quantum well structure having an index of refraction that varies in response to the intensity of an incident, essentially monochromatic control light, first and second semiconductor light guide layers contacting and sandwiching the multiple quantum well structure for transmitting a signal light beam variably coupled between the first and second light guide layers in response to the intensity of the control light, and first and second semiconductor cladding layers contacting and sandwiching the first and second light guide layers, respectively.

摘要翻译： 用于改变响应于控制光的强度的信号光的位置和调制信号光的光控半导体光耦合器包括多个量子阱结构，其具有响应入射强度而变化的折射率，基本上单色 控制光，第一和第二半导体光导层，其接触和夹着所述多量子阱结构，以响应于所述控制光的强度传输可变地耦合在所述第一和第二光导层之间的信号光束;以及第一和第二半导体包层 层分别接触并夹着第一和第二导光层。

公开(公告)号：US4847217A

公开(公告)日：1989-07-11

申请号：US203763

申请日：1988-06-08

申请人： Etsuji Omura ,  Katsuhiko Goto

发明人： Etsuji Omura ,  Katsuhiko Goto

IPC分类号： H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00

CPC分类号： H01L21/033 ,  H01L21/2233 ,  Y10S438/923

摘要： A method for producing a semiconductor device includes producing a first mask film on a main surface of a compound semiconductor wafer, patterning the first mask film and producing a second mask film so as to cover at least an end portion of the first mask film, diffusing impurities into the compound semiconductor wafer under gaseous pressure of atoms, which atoms occur in the compound of the semiconductor wafer, thereby to produce a first conductivity type first diffusion region, thermally diffusing impurities into the wafer under gaseous pressure of atoms, which atoms occur in the compound of the semiconductor wafer, thereby to produce a second conductivity type region. Accordingly, the end of the first mask film can be recognized accurately and used as a reference line for pattern alignment in photolithograph. Thus, diffusions of p type and n type impurities can be conducted at a high positional precision, and an outstanding performance semiconductor device can be obtained.

摘要翻译： 一种制造半导体器件的方法包括在化合物半导体晶片的主表面上制造第一掩模膜，对第一掩模膜进行图案化并制造第二掩模膜以覆盖第一掩模膜的至少端部，扩散 在原子的气体压力下将杂质混入到化合物半导体晶片中，这些原子发生在半导体晶片的化合物中，由此产生第一导电类型的第一扩散区，在原子的气体压力下将杂质热扩散到晶片中，该原子发生在 半导体晶片的化合物，从而产生第二导电类型区域。 因此，可以准确地识别第一掩模膜的端部，并将其用作光刻图案中的图案对准的参考线。 因此，可以以高位置精度进行p型和n型杂质的扩散，并且可以获得优异的性能的半导体器件。

公开(公告)号：US5072272A

公开(公告)日：1991-12-10

申请号：US637556

申请日：1991-01-04

申请人： Etsuji Omura

发明人： Etsuji Omura

IPC分类号： G02F1/015 ,  G02F1/017

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F2201/346

摘要： A semiconductor light modulator for modulating incident light of a particular wavelength according to the invention includes a plurality of successively disposed, alternating p and n conductivity type semiconductor layers, each layer having substantially the same index of refraction and a thickness approximately equal to one-fourth an integer multiple of the wavelength of light to be modulated divided by the index of refraction of the layer, a p-type region extending through the successively disposed layers, an n-type region extending through the successively disposed layers and spaced from the p-type region, a first electrode disposed on and in electrical contact with the p-type region, and a second electrode disposed on and in electrical contact with the n-type region.

摘要翻译： 根据本发明的用于调制特定波长的入射光的半导体光调制器包括多个连续设置的交替的p和n导电类型的半导体层，每个层具有基本相同的折射率和大约等于1/4的厚度 待调制的光的波长的整数倍除以该层的折射率，延伸穿过依次设置的层的p型区域，延伸穿过相继设置的层并与p-型区隔开的n型区域， 所述第一电极设置在所述p型区域上并与所述p型区域电接触;以及第二电极，设置在所述n型区域上并与所述n型区域电接触。

公开(公告)号：US5003358A

公开(公告)日：1991-03-26

申请号：US227124

申请日：1988-08-02

申请人： Shogo Takahashi ,  Etsuji Omura

发明人： Shogo Takahashi ,  Etsuji Omura

IPC分类号： H01L27/15 ,  H01L33/14 ,  H01L33/30 ,  H01L33/36 ,  H01S5/00 ,  H01S5/042

CPC分类号： H01L27/15 ,  H01L33/0025 ,  Y10S148/072 ,  Y10S148/099

摘要： A semiconductor light emitting device includes a vertical aperture produced at a main surface of a semi-insulating or insulating substrate, a transverse aperture provided in the substrate communicating with the vertical aperture, a conducting semiconductor layer buried in the vertical aperture and the transverse aperture, a groove produced by etching the substrate from the surface thereof until reaching the conducting semiconductor layer at a portion of the transverse aperture, and a light emitting element produced in the groove, and the light emitting region of the element being buried in the groove and connected with the buried conducting semiconductor layer. Accordingly, no pn junction exists at the periphery of the light emitting region, and a semiconductor light emitting element of quite low parasitic capacitance is obtained at high yield. A planar structure in which two electrodes are produced at the same plane is obtained, resulting in ease of integration and enhancement of the integration density.

摘要翻译： 半导体发光器件包括在半绝缘或绝缘衬底的主表面处产生的垂直孔，设置在与垂直孔连通的衬底中的横向孔，埋在垂直孔中的导电半导体层和横向孔， 通过从其表面蚀刻基板直到到达横向孔的一部分处的导电半导体层而产生的凹槽和在凹槽中产生的发光元件，并且元件的发光区域被埋入凹槽中并连接 与埋入的导电半导体层。 因此，在发光区域的周围没有pn结，以高产率获得具有相当低的寄生电容的半导体发光元件。 获得在同一平面上制造两个电极的平面结构，从而易于集成并增强集成密度。