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    Apparatus for physical vapor deposition having centrally fed RF energy
    1.
    发明授权
    Apparatus for physical vapor deposition having centrally fed RF energy 有权
    用于物理气相沉积的装置具有中央馈送的RF能量

    公开(公告)号：US08795488B2

    公开(公告)日：2014-08-05

    申请号：US13048440

    申请日：2011-03-15

    申请人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

    发明人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

    IPC分类号： C23C14/40

    CPC分类号： H01J37/3405 ,  H01J37/3411

    摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

    摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

    Apparatus for enabling concentricity of plasma dark space
    4.
    发明授权
    Apparatus for enabling concentricity of plasma dark space 有权
    用于实现等离子体暗室的同心度的装置

    公开(公告)号：US08702918B2

    公开(公告)日：2014-04-22

    申请号：US13327689

    申请日：2011-12-15

    申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    IPC分类号： C23C14/56

    CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

    摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

    摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

    METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES
    5.
    发明申请
    METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
    用于在高比例特征中沉积金属的方法

    公开(公告)号：US20120028461A1

    公开(公告)日：2012-02-02

    申请号：US13178870

    申请日：2011-07-08

    申请人： Alan Ritchie ,  Karl Brown ,  John Pipitone

    发明人： Alan Ritchie ,  Karl Brown ,  John Pipitone

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

    摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

    摘要翻译： 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

    Process kit with plasma-limiting gap
    6.
    发明授权
    Process kit with plasma-limiting gap 有权

    公开(公告)号：US09695502B2

    公开(公告)日：2017-07-04

    申请号：US13435956

    申请日：2012-03-30

    申请人： Alan Ritchie ,  Donny Young

    发明人： Alan Ritchie ,  Donny Young

    IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34

    CPC分类号： C23C14/34 ,  H01J37/32495 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3405

    摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

    Substrate processing system having symmetric RF distribution and return paths
    7.
    发明授权
    Substrate processing system having symmetric RF distribution and return paths 有权
    基板处理系统具有对称的RF分布和返回路径

    公开(公告)号：US09255322B2

    公开(公告)日：2016-02-09

    申请号：US13436776

    申请日：2012-03-30

    申请人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

    发明人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

    IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

    CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

    摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

    摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

    Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
    9.
    发明授权
    Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power 有权
    具有旋转磁体组件的物理气相沉积室和集中供电的RF功率

    公开(公告)号：US08795487B2

    公开(公告)日：2014-08-05

    申请号：US13075841

    申请日：2011-03-30

    申请人： Alan Ritchie ,  Keith Miller

    发明人： Alan Ritchie ,  Keith Miller

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3405 ,  H01J37/3455

    摘要： Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.

    摘要翻译： 本发明的实施例提供了用于衬底的物理气相沉积（PVD）处理的改进的方法和装置。 在一些实施例中，用于物理气相沉积（PVD）的设备可以包括目标组件，其具有靶，其包括待沉积在衬底上的源材料，相对的源极分布板，与靶的背面相对并且电耦合到靶 沿着靶的外围边缘，以及设置在靶的背面和源分布板之间的空腔; 在与所述目标的中心轴重合的点处耦合到所述源分配板的电极; 以及磁控管组件，其包括设置在所述空腔内并具有与所述目标组件的中心轴线对准的旋转轴线的可旋转磁体，其中所述磁控管组件不被驱动通过所述电极。