公开(公告)号：US20100012948A1

公开(公告)日：2010-01-21

申请号：US12503656

申请日：2009-07-15

申请人： Alexander Usikov ,  Alexander Syrkin ,  Robert G.W. Brown ,  Hussein S. El-Ghoroury ,  Philippe Spiberg ,  Vladimir Ivantsov ,  Oleg Kovalenkov ,  Lisa Shapovalova

发明人： Alexander Usikov ,  Alexander Syrkin ,  Robert G.W. Brown ,  Hussein S. El-Ghoroury ,  Philippe Spiberg ,  Vladimir Ivantsov ,  Oleg Kovalenkov ,  Lisa Shapovalova

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003

摘要： A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.

摘要翻译： 生长平面非极性m面或半极性III-氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料在合适的衬底上生长，例如 m面蓝宝石衬底，采用氢化物气相外延（HVPE）。 该方法包括在氨和氩的环境中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层， 使用HVPE在中间层上的极性m面III-氮化物外延层。

公开(公告)号：US08673074B2

公开(公告)日：2014-03-18

申请号：US12503656

申请日：2009-07-15

申请人： Alexander Usikov ,  Alexander Syrkin ,  Robert G. W. Brown ,  Hussein S. El-Ghoroury ,  Philippe Spiberg ,  Vladimir Ivantsov ,  Oleg Kovalenkov ,  Lisa Shapovalova

发明人： Alexander Usikov ,  Alexander Syrkin ,  Robert G. W. Brown ,  Hussein S. El-Ghoroury ,  Philippe Spiberg ,  Vladimir Ivantsov ,  Oleg Kovalenkov ,  Lisa Shapovalova

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003

摘要： A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.

摘要翻译： 生长平面非极性m面或半极性III-氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料在合适的衬底上生长，例如 m面蓝宝石衬底，采用氢化物气相外延（HVPE）。 该方法包括在氨和氩气氛中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层， 使用HVPE在中间层上的极性m面III-氮化物外延层。

公开(公告)号：US08728938B2

公开(公告)日：2014-05-20

申请号：US13533812

申请日：2012-06-26

申请人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

发明人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

IPC分类号： H01L21/44 ,  C30B13/02 ,  C30B31/02 ,  C30B29/40

CPC分类号： C30B31/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination. While this modification is a powerful tool to make high-quality group-III nitride epitaxial layers attainable even on foreign substrates having polar, semipolar and nonpolar orientation, it remains gentle enough to keep the surface of the epilayer extremely smooth. Various embodiments are disclosed.

摘要翻译： 本发明涉及一种以显着改善的结构完整性和表面平坦度来刺激III族氮化物半导体的外延层的生长的衬底的改性表面的制造方法。 通过将衬底暴露于氯化氢（HCl）和铝金属（Al）之间的反应的气体产物，在生长反应器的外部或内部进行改性。 作为多步预处理方法的一个步骤或重要部分，修饰增益将沉积在衬底和III族氮化物外延结构之间的相干协调。 与外延层一起，总外延结构可以包括缓冲层，以实现精确的基底 - 外延层协调。 虽然这种修改是使得即使在具有极性，半极性和非极性取向的异质衬底上也能获得高质量III族氮化物外延层的强大工具，但它仍然足够柔和以保持外延层的表面非常光滑。 公开了各种实施例。

公开(公告)号：US08629065B2

公开(公告)日：2014-01-14

申请号：US12614313

申请日：2009-11-06

申请人： Philippe Spiberg ,  Hussein S. El-Ghoroury ,  Alexander Usikov ,  Alexander Syrkin ,  Bernard Scanlan ,  Vitali Soukhoveev

发明人： Philippe Spiberg ,  Hussein S. El-Ghoroury ,  Alexander Usikov ,  Alexander Syrkin ,  Bernard Scanlan ,  Vitali Soukhoveev

IPC分类号： H01L31/036

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403

摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.

摘要翻译： 生长平面非极性m面III氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料在合适的衬底上生长，例如m面蓝宝石 底物，采用氢化物气相外延（HVPE）。 该方法包括在氨和氩的环境中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层， 使用HVPE在中间层上的极性m面III-氮化物外延层。 公开了各种替代方法。

公开(公告)号：US20130337639A1

公开(公告)日：2013-12-19

申请号：US13533812

申请日：2012-06-26

申请人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

发明人： Vladimir Ivantsov ,  Anna Volkova ,  Lisa Shapovalov ,  Alexander Syrkin ,  Philippe Spiberg ,  Hussein S. El-Ghoroury

IPC分类号： H01L21/205

CPC分类号： C30B31/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination. While this modification is a powerful tool to make high-quality group-III nitride epitaxial layers attainable even on foreign substrates having polar, semipolar and nonpolar orientation, it remains gentle enough to keep the surface of the epilayer extremely smooth. Various embodiments are disclosed.

摘要翻译： 本发明涉及一种以显着改善的结构完整性和表面平坦度来刺激III族氮化物半导体的外延层的生长的衬底的改性表面的制造方法。 通过将衬底暴露于氯化氢（HCl）和铝金属（Al）之间的反应的气体产物，在生长反应器的外部或内部进行改性。 作为多步预处理方法的一个步骤或重要部分，修饰增益将沉积在衬底和III族氮化物外延结构之间的相干协调。 与外延层一起，总外延结构可以包括缓冲层，以实现精确的基底 - 外延层协调。 虽然这种修改是使得即使在具有极性，半极性和非极性取向的异质衬底上也能获得高质量III族氮化物外延层的强大工具，但它仍然足够柔和以保持外延层的表面非常光滑。 公开了各种实施例。

公开(公告)号：US20110108954A1

公开(公告)日：2011-05-12

申请号：US12614313

申请日：2009-11-06

申请人： Philippe Spiberg ,  Hussein S. El-Ghoroury ,  Alexander Usikov ,  Alexander Syrkin ,  Bernard Scanlan ,  Vitali Soukhoveev

发明人： Philippe Spiberg ,  Hussein S. El-Ghoroury ,  Alexander Usikov ,  Alexander Syrkin ,  Bernard Scanlan ,  Vitali Soukhoveev

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403

摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.

摘要翻译： 生长平面非极性m面III氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料在合适的衬底上生长，例如m面蓝宝石 底物，采用氢化物气相外延（HVPE）。 该方法包括在氨和氩的环境中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层， 使用HVPE在中间层上的极性m面III-氮化物外延层。 公开了各种替代方法。

公开(公告)号：US20100066921A1

公开(公告)日：2010-03-18

申请号：US12561101

申请日：2009-09-16

申请人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

发明人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC分类号： H04N9/31

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

摘要： Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

摘要翻译： 发射量子光子成像器由数字可寻址多色像素的空间阵列组成。 每个像素是多个半导体激光二极管的垂直堆叠，每个半导体激光二极管可以产生不同颜色的激光。 在每个多色像素内，通过耦合到包括成像器装置的多个激光二极管中的每一个的光限制区域的多个垂直波导，从二极管堆产生的光被垂直于成像器装置的平面发射。 包括单个像素的每个激光二极管是可单独寻址的，使得每个像素可以在每个颜色的任何所需的开/关占空比下同时发射与激光二极管相关联的颜色的任何组合。 每个单色多色像素可以通过控制其各自的激光二极管的开/关占空比同时发出所需的颜色和亮度值。

公开(公告)号：US20090278998A1

公开(公告)日：2009-11-12

申请号：US12486600

申请日：2009-06-17

申请人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

发明人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC分类号： H04N9/31 ,  H01L33/00 ,  H01L21/30

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

摘要： Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

公开(公告)号：US20100220042A1

公开(公告)日：2010-09-02

申请号：US12728069

申请日：2010-03-19

申请人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

发明人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC分类号： G09G3/32 ,  H01L27/15

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

摘要： Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

公开(公告)号：US20100003777A1

公开(公告)日：2010-01-07

申请号：US12561121

申请日：2009-09-16

申请人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

发明人： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC分类号： H01L33/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

摘要： Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.