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116 条记录 (耗时 0.03 秒)

    Method of forming biaxially textured alloy substrates and devices thereon
    1.
    发明授权
    Method of forming biaxially textured alloy substrates and devices thereon 失效
    在其上形成双轴织构的合金基底及其装置的方法

    公开(公告)号：US5964966A

    公开(公告)日：1999-10-12

    申请号：US934328

    申请日：1997-09-19

    申请人： Amit Goyal ,  Eliot D. Specht ,  Donald M. Kroeger ,  Mariappan Paranthaman

    发明人： Amit Goyal ,  Eliot D. Specht ,  Donald M. Kroeger ,  Mariappan Paranthaman

    IPC分类号： C22C19/03 ,  C22C19/05 ,  C22F1/10 ,  C30B29/64 ,  H01L39/24 ,  G22C19/03

    CPC分类号： C22F1/10 ,  C22C19/03 ,  C22C19/058 ,  H01L39/2454

    摘要： Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superconductivity applications. The biaxially textured alloy substrates also possess greatly enhanced mechanical properties (yield strength, ultimate tensile strength) which are essential for most applications, in particular, superconductors. A method is disclosed for producing complex multicomponent alloys which have the ideal physical properties for specific applications, such as lattice parameter, degree of magnetism and mechanical strength, and which cannot be fabricated in textured form. In addition, a method for making ultra thin biaxially textured substrates with complex compositions is disclosed.

    摘要翻译： 公开了具有良好发展的单组分织构的可以是双轴织构的特定合金，特别是Ni基合金。 这些合金具有显着降低的居里点，从超导应用的观点来看是非常理想的。 双轴织构的合金基底还具有大大增强的机械性能（屈服强度，极限拉伸强度），这对于大多数应用，特别是超导体是至关重要的。 公开了一种用于生产具有特定用途的理想物理性能的复合多组分合金的方法，例如晶格参数，磁性度和机械强度，并且不能以纹理形式制造。 另外，公开了一种制备具有复杂组成的超薄双轴纹理基片的方法。

    Method of forming biaxially textured alloy substrates and devices thereon
    3.
    发明授权
    Method of forming biaxially textured alloy substrates and devices thereon 有权
    在其上形成双轴织构的合金基底及其装置的方法

    公开(公告)号：US06106615A

    公开(公告)日：2000-08-22

    申请号：US250683

    申请日：1999-02-16

    申请人： Amit Goyal ,  Eliot D. Specht ,  Donald M. Kroeger ,  Mariappan Paranthaman

    发明人： Amit Goyal ,  Eliot D. Specht ,  Donald M. Kroeger ,  Mariappan Paranthaman

    IPC分类号： C22C19/03 ,  C22C19/05 ,  C22F1/10 ,  C30B29/64 ,  H01L39/24 ,  C30B23/00

    CPC分类号： C22F1/10 ,  C22C19/03 ,  C22C19/058 ,  H01L39/2454

    摘要： Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superconductivity applications. The biaxially textured alloy substrates also possess greatly enhanced mechanical properties (yield strength, ultimate tensile strength) which are essential for most applications, in particular, superconductors. A method is disclosed for producing complex multicomponent alloys which have the ideal physical properties for specific applications, such as lattice parameter, degree of magnetism and mechanical strength, and which cannot be in textured form. In addition, a method for making ultra thin biaxially textured substrates with complex compositions is disclosed.

    摘要翻译： 公开了具有良好发展的单组分织构的可以是双轴织构的特定合金，特别是Ni基合金。 这些合金具有显着降低的居里点，从超导应用的观点来看是非常理想的。 双轴织构的合金基底还具有大大增强的机械性能（屈服强度，极限拉伸强度），这对于大多数应用，特别是超导体是至关重要的。 公开了一种用于制备复合多组分合金的方法，其具有特定用途的理想物理性能，例如晶格参数，磁力度和机械强度，并且不能具有纹理形式。 另外，公开了一种制备具有复杂组成的超薄双轴纹理基片的方法。

    MgO buffer layers on rolled nickel or copper as superconductor substrates
    8.
    发明授权
    MgO buffer layers on rolled nickel or copper as superconductor substrates 失效
    轧制的镍或铜作为超导体衬底的MgO缓冲层

    公开(公告)号：US06261704B1

    公开(公告)日：2001-07-17

    申请号：US09096558

    申请日：1998-06-12

    申请人： Mariappan Paranthaman ,  Amit Goyal ,  Donald M. Kroeger ,  Frederic A. List, III

    发明人： Mariappan Paranthaman ,  Amit Goyal ,  Donald M. Kroeger ,  Frederic A. List, III

    IPC分类号： B05B512

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/16 ,  Y10T428/12493 ,  Y10T428/12646

    摘要： Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

    摘要翻译： 缓冲层结构外延沉积在用于高电流导体的双轴纹理轧制的Ni和/或Cu衬底上，更具体地，缓冲层结构如MgO / Ag / Pt / Ni，MgO / Ag / Pd / Ni，MgO / Ag / Ni，MgO / Ag / Pd / Cu，MgO / Ag / Pt / Cu和MgO / Ag / Cu。 用于沉积这些缓冲层的技术包括电子束蒸发，热蒸发，rf磁控溅射，脉冲激光沉积，金属有机化学气相沉积（MOCVD），燃烧CVD和喷雾热解。

    Buffer layers on rolled nickel or copper as superconductor substrates
    9.
    发明授权
    Buffer layers on rolled nickel or copper as superconductor substrates 失效
    作为超导体衬底的轧制镍或铜上的缓冲层

    公开(公告)号：US6150034A

    公开(公告)日：2000-11-21

    申请号：US96559

    申请日：1998-06-12

    申请人： Mariappan Paranthaman ,  Dominic F. Lee ,  Donald M. Kroeger ,  Amit Goyal

    发明人： Mariappan Paranthaman ,  Dominic F. Lee ,  Donald M. Kroeger ,  Amit Goyal

    IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B32B9/00

    CPC分类号： H01L39/2461 ,  C23C14/08 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

    摘要： Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

    摘要翻译： 缓冲层结构外延沉积在镍和/或铜的双轴纹理轧制衬底上，以及它们用于高电流导体的合金，更具体地，缓冲层结构如Y2O3 / Ni，YSZ / Y2O3 / Ni，Yb2O3 / Ni，Yb2O3 / Y2O3 / Ni，Yb2O3 / CeO2 / Ni，RE2O3 / Ni（RE =稀土）和Yb2O3 / YSZ / CeO2 / Ni，Y2O3 / Cu，YSZ / Y2O3 / Cu，Yb2O3 / Cu，Yb2O3 / Y2O3 / / CeO 2 / Cu，RE 2 O 3 / Cu和Yb 2 O 3 / YSZ / CeO 2 / Cu。 沉积方法包括物理气相沉积技术，包括电子束蒸发，rf磁控溅射，脉冲激光沉积，热蒸发和溶液前驱体方法，其包括化学气相沉积，燃烧CVD，金属有机分解，溶胶 - 凝胶加工和 等离子喷涂