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    Selective conductive coating for MEMS sensors
    1.
    发明授权
    Selective conductive coating for MEMS sensors 有权

    公开(公告)号：US10427931B2

    公开(公告)日：2019-10-01

    申请号：US15635846

    申请日：2017-06-28

    Applicant: Analog Devices, Inc.

    Inventor： Bradley C. Kaanta

    IPC: H01L21/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/125

    Abstract: A capacitive microelectromechanical systems (MEMS) sensor is provided, having conductive coatings on opposing surfaces of capacitive structures. The capacitive structures may be formed of silicon, and the conductive coating is formed of tungsten in some embodiments. The structure is formed in some embodiments by first releasing the silicon structures and then selectively coating them in the conductive material. In some embodiments, the coating may result in encapsulating the capacitive structures.

    Packaged Microchip with Patterned Interposer
    2.
    发明申请
    Packaged Microchip with Patterned Interposer 审中-公开
    封装Microchip与图形化插入器

    公开(公告)号：US20160229689A1

    公开(公告)日：2016-08-11

    申请号：US15004252

    申请日：2016-01-22

    Applicant: Analog Devices, Inc.

    Inventor： Bradley C. Kaanta ,  John A. Alberghini ,  Kemiao Jia

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0048

    Abstract: A packaged microchip has a base, a die with a mounting surface, and an electrically inactive interposer between the base and the die. The interposer has a first side with at least one recess that extends no more than part-way through the interposer from the first side. Accordingly, the recess defines a top portion (of the first side) with a top area. The die mounting surface, which is coupled with the interposer, correspondingly has a die area. The top area of the interposer preferably is less than the die area.

    Abstract translation: 封装的微芯片具有基座，具有安装表面的管芯，以及在基座和管芯之间的无电插拔器。 插入器具有第一侧面，该第一侧面具有至少一个凹槽，该凹槽不超过第一侧的插入件的一部分延伸。 因此，凹部限定具有顶部区域的顶部（第一侧的顶部）。 与插入器耦合的管芯安装表面相应地具有管芯区域。 插入件的顶部面积优选小于模具面积。

    Low-parasitic capacitance MEMS inertial sensors and related methods
    3.
    发明授权
    Low-parasitic capacitance MEMS inertial sensors and related methods 有权

    公开(公告)号：US11279614B2

    公开(公告)日：2022-03-22

    申请号：US16457865

    申请日：2019-06-28

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    Low-parasitic capacitance MEMS inertial sensors and related methods
    4.
    发明授权
    Low-parasitic capacitance MEMS inertial sensors and related methods 有权

    公开(公告)号：US11746004B2

    公开(公告)日：2023-09-05

    申请号：US17668326

    申请日：2022-02-09

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    CPC classification number: B81C1/00063 ,  B81C1/00166 ,  G01C19/5755 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0242

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    Mechanically isolated MEMS device
    5.
    发明授权
    Mechanically isolated MEMS device 有权

    公开(公告)号：US10131538B2

    公开(公告)日：2018-11-20

    申请号：US14853251

    申请日：2015-09-14

    Applicant: Analog Devices, Inc.

    Inventor： Bradley C. Kaanta ,  Kemiao Jia

    IPC: H01L29/84 ,  B81B7/00

    Abstract: A MEMS device has a substrate with a structure surface and an opposing exterior surface, microstructure formed on the structure surface of the substrate, and a cap coupled with the substrate to form a hermetically sealed interior chamber containing the microstructure. The substrate forms a trench extending from, and being open to, the opposing exterior surface to produce a sensor region and a second region. Specifically, the second region is radially outward of the sensor region. The MEMS device also has a spring integrally formed at least in part within the trench to mechanically connect the sensor region and the second region, and other structure integral with the substrate. The spring or the other structure at least in part hermetically seal the interior chamber.

    LOW-PARASITIC CAPACITANCE MEMS INERTIAL SENSORS AND RELATED METHODS
    7.
    发明申请
    LOW-PARASITIC CAPACITANCE MEMS INERTIAL SENSORS AND RELATED METHODS 有权

    公开(公告)号：US20220162059A1

    公开(公告)日：2022-05-26

    申请号：US17668326

    申请日：2022-02-09

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    SELECTIVE CONDUCTIVE COATING FOR MEMS SENSORS
    8.
    发明申请
    SELECTIVE CONDUCTIVE COATING FOR MEMS SENSORS 审中-公开

    公开(公告)号：US20170369304A1

    公开(公告)日：2017-12-28

    申请号：US15635846

    申请日：2017-06-28

    Applicant: Analog Devices, Inc.

    Inventor： Bradley C. Kaanta

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/125

    CPC classification number: B81B3/0086 ,  B81B2201/0221 ,  B81C1/00698 ,  G01P15/125

    Abstract: A capacitive microelectromechanical systems (MEMS) sensor is provided, having conductive coatings on opposing surfaces of capacitive structures. The capacitive structures may be formed of silicon, and the conductive coating is formed of tungsten in some embodiments. The structure is formed in some embodiments by first releasing the silicon structures and then selectively coating them in the conductive material. In some embodiments, the coating may result in encapsulating the capacitive structures.

    Mechanically Isolated MEMS Device
    10.
    发明申请
    Mechanically Isolated MEMS Device 审中-公开
    机械隔离MEMS器件

    公开(公告)号：US20170073218A1

    公开(公告)日：2017-03-16

    申请号：US14853251

    申请日：2015-09-14

    Applicant: Analog Devices. Inc.

    Inventor： Bradley C. Kaanta ,  Kemiao Jia

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0048 ,  B81B2203/0163

    Abstract: A MEMS device has a substrate with a structure surface and an opposing exterior surface, microstructure formed on the structure surface of the substrate, and a cap coupled with the substrate to form a hermetically sealed interior chamber containing the microstructure. The substrate forms a trench extending from, and being open to, the opposing exterior surface to produce a sensor region and a second region. Specifically, the second region is radially outward of the sensor region. The MEMS device also has a spring integrally formed at least in part within the trench to mechanically connect the sensor region and the second region, and other structure integral with the substrate. The spring or the other structure at least in part hermetically seal the interior chamber.

    Abstract translation: MEMS器件具有具有结构表面和相对的外表面的基底，形成在基底的结构表面上的微结构，以及与基底结合以形成包含微结构的气密密封的内部腔的盖。 衬底形成从相对的外表面延伸并开口的沟槽，以产生传感器区域和第二区域。 具体地，第二区域在传感器区域的径向外侧。 MEMS器件还具有至少部分地在沟槽内整体形成的弹簧以机械地连接传感器区域和第二区域以及与衬底一体的其它结构。 弹簧或其他结构至少部分地密封内部腔室。

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