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    Method for vapor phase deposition of gallium nitride film
    1.
    发明授权
    Method for vapor phase deposition of gallium nitride film 失效
    氮化镓膜气相沉积方法

    公开(公告)号：US4792467A

    公开(公告)日：1988-12-20

    申请号：US86748

    申请日：1987-08-17

    申请人： Andreas A. Melas ,  Norbert Braunagel

    发明人： Andreas A. Melas ,  Norbert Braunagel

    IPC分类号： B05D5/00 ,  B05D7/14 ,  C23C16/30 ,  C23C16/34

    CPC分类号： B05D5/00 ,  B05D7/14 ,  C23C16/303

    摘要： A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula:H.sub.3 GaNR.sub.3Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate. The source compound, maintained in the gaseous phase, decomposes in the deposition chamber and optionally reacts with other materals in the deposition chamber. Gallium nitride is deposited on the substrate as a result.

    摘要翻译： 一种在衬底上沉积氮化镓膜的工艺。 提供具有下式的源化合物：H3GaNR3每个R独立地选自具有1至约4个碳原子的烷基。 将源化合物输送到包含基底的沉积室中。 保持在气相中的源化合物在沉积室中分解并任选地与沉积室中的其它物质反应。 结果，在衬底上沉积氮化镓。

    Bubbler cylinder and dip tube device
    2.
    发明授权
    Bubbler cylinder and dip tube device 失效
    鼓泡筒和汲取管装置

    公开(公告)号：US4506815A

    公开(公告)日：1985-03-26

    申请号：US448160

    申请日：1982-12-09

    申请人： Andreas A. Melas ,  John W. O'Grady, Jr.

    发明人： Andreas A. Melas ,  John W. O'Grady, Jr.

    IPC分类号： F17C7/00 ,  C23C16/448 ,  C30B25/14 ,  C30B31/08 ,  F17C1/00 ,  F17C13/04 ,  B65D83/00

    CPC分类号： C30B31/08 ,  C23C16/4482 ,  C30B25/14

    摘要： An all welded square bottomed stainless steel cylinder and dip tube device for transferring by vapor deposition very reactive electronic grade organometallic liquid to a deposition system includes a top fill opening and inlet and outlet diaphragm valves, and is coated on the interior with PVF Teflon to several thousandths of an inch thickness. Contamination of the liquid is eliminated or at least substantially minimized since the device is stable in an upright position, the diaphragm valves each have a very small and inert area exposed to the liquid, and the coating serves as a barrier to contamination of the liquid by the metal of which the cylinder and dip tube are made.

    摘要翻译： 用于通过气相沉积非常活性的电子级有机金属液体转移到沉积系统的全焊接方形底部不锈钢圆筒和浸渍管装置包括顶部填充开口和入口和出口隔膜阀，并且用PVF特氟隆涂覆在内部至几个 千分之一英寸厚。 液体的污染被消除或至少基本上最小化，因为该装置在直立位置是稳定的，隔膜阀各自具有暴露于液体的非常小和惰性的区域，并且该涂层作为液体污染的屏障 制造气缸和汲取管的金属。

    MOCVD of indium oxide and indium/tin oxide films on substrates
    3.
    发明授权
    MOCVD of indium oxide and indium/tin oxide films on substrates 失效
    衬底上的氧化铟和铟/锡氧化物膜的MOCVD

    公开(公告)号：US5147688A

    公开(公告)日：1992-09-15

    申请号：US639374

    申请日：1991-01-11

    申请人： Andreas A. Melas

    发明人： Andreas A. Melas

    IPC分类号： C23C16/40

    CPC分类号： C23C16/407

    摘要： Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.

    摘要翻译： 公开了分别使用烷基铝合物或烷基铝合物和有机锡化合物前体在衬底上沉积氧化铟或铟/锡氧化物膜的金属有机化学气相沉积（MOCVD）工艺。

    Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
    4.
    发明授权
    Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition 失效
    杂化有机金属化合物，特别是金属有机化学气相沉积

    公开(公告)号：US4720560A

    公开(公告)日：1988-01-19

    申请号：US664645

    申请日：1984-10-25

    申请人： Benjamin C. Hui ,  Jorg Lorberth ,  Andreas A. Melas

    发明人： Benjamin C. Hui ,  Jorg Lorberth ,  Andreas A. Melas

    IPC分类号： C23C16/48 ,  C07C391/00 ,  C07C395/00 ,  C07F3/00 ,  C07F3/02 ,  C07F3/06 ,  C07F3/08 ,  C07F3/10 ,  C07F3/12 ,  C07F5/00 ,  C07F5/02 ,  C07F5/06 ,  C07F9/50 ,  C07F9/72 ,  C07F9/90 ,  C07F9/94 ,  C23C16/18 ,  C23C16/30

    CPC分类号： C07F5/00 ,  C07C391/00 ,  C07C395/00 ,  C07F3/00 ,  C07F3/02 ,  C07F3/06 ,  C07F3/08 ,  C07F3/12 ,  C07F5/027 ,  C07F5/06 ,  C07F9/505 ,  C07F9/723 ,  C07F9/90 ,  C07F9/94 ,  C23C16/18 ,  C23C16/301 ,  C23C16/306

    摘要： Compounds having the molecular formula:MR.sub.xwherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituents are different, and M is an element selected from Groups 2B or 3A of the Periodic Table, Bismuth, Selenium, Tellurium, Beryllium, and Magnesium, but excluding Aluminum, Bismuth, Selenium, and Tellurium if any R is hydride. The hybrid compound is used for metal organic chemical vapor deposition. The invention also includes a metal organic chemical vapor deposition process employing a hybrid of first and second compounds having the above formula, but wherein the R substituents of each compound can be like or unlike and M is selected from Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table except for Carbon, Nitrogen, Oxygen, and Sulfur. The hybrid composite compound has different properties than the first and second compounds, and thus can be more suitable for a particular metal organic chemical vapor deposition process.

    摘要翻译： 具有分子式：MRx的化合物，其中x是从2到4的整数，其中每个所述R取代基独立地选自氢化物，低级烷基，苯基，烷基取代的苯基，环戊二烯基和烷基取代的环戊二烯基，所述 R取代基不同，M是选自元素周期表第2B或3A族的元素，铋，硒，碲，铍和镁，但如果任何R是氢化物，则不包括铝，铋，硒和碲。 杂化化合物用于金属有机化学气相沉积。 本发明还包括使用具有上式的第一和第二化合物的杂化物的金属有机化学气相沉积方法，但其中每种化合物的R取代基可以是或不同的，M选自2B，2A，3A，5A族 ，以及除碳，氮，氧和硫之外的元素周期表6A。 杂化复合化合物具有与第一和第二化合物不同的性质，因此可以更适合于特定的金属有机化学气相沉积工艺。

    Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
    6.
    发明授权
    Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films 失效
    氢化镓/三烷基胺加合物，以及它们在III-V族化合物膜沉积中的应用

    公开(公告)号：US4740606A

    公开(公告)日：1988-04-26

    申请号：US680760

    申请日：1986-07-01

    申请人： Andreas A. Melas

    发明人： Andreas A. Melas

    IPC分类号： C07F5/00 ,  C23C16/30 ,  C30B29/40

    CPC分类号： C23C16/301 ,  C07F5/003

    摘要： Adduct of the formula:H.sub.3 GaNR.sub.3wherein each R is independently selected from lower alkyl having from 2 to about 4 carbon atoms, and a process for depositing gallium nitride, gallium arsenide, or gallium phosphide films, using the above adduct as a source of nitride (for the nitride film) and gallium. Arsenic and phosphorus compounds are also added for depositing gallium compounds of those elements. The process can also be performed using the analogous trimethylamine adduct.

    Method to reduce crystal defects particularly in group III-nitride layers and substrates
    8.
    发明授权
    Method to reduce crystal defects particularly in group III-nitride layers and substrates 失效
    减少晶体缺陷的方法，特别是III族氮化物层和衬底

    公开(公告)号：US07341628B2

    公开(公告)日：2008-03-11

    申请号：US11014304

    申请日：2004-12-16

    申请人： Andreas A. Melas

    发明人： Andreas A. Melas

    IPC分类号： C30B33/00

    CPC分类号： H01L21/26553 ,  C30B29/40 ,  C30B31/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/02689 ,  H01L21/265 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905

    摘要： Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.

    摘要翻译： 通过诸如氢化物气相外延（HVPE）的外延生长为单晶的氮化镓层含有大量的晶体缺陷，例如六边形凹坑，这限制了光电子器件的产率和性能。 在该方法中，首先用大约0.1微米厚的铝层涂覆氮化镓层。 接下来，通过铝层离子注入氮气，以便占据主要是0.1至0.5微米的氮化镓层。 最后，通过诸如电子或光子的脉冲定向能量束，具有大约1焦耳/厘米2的能量密度，顶部约0.5微米将被转换成具有降低的缺陷密度的单晶。

    Method of producing halide-free metal and hydroxides
    9.
    发明授权
    Method of producing halide-free metal and hydroxides 失效
    生产无卤素金属和氢氧化物的方法

    公开(公告)号：US4741894A

    公开(公告)日：1988-05-03

    申请号：US870070

    申请日：1986-06-03

    申请人： Andreas A. Melas

    发明人： Andreas A. Melas

    IPC分类号： C01B13/32 ,  C01F17/00 ,  C01G17/02 ,  C01G28/00 ,  C01G33/00 ,  C01G35/00 ,  C01G56/00 ,  C07C29/70 ,  C07C31/28 ,  C01B13/14 ,  C22B34/24

    CPC分类号： C01G33/00 ,  C01B13/32 ,  C01F17/0043 ,  C01G17/02 ,  C01G28/005 ,  C01G35/00 ,  C01G56/00 ,  C07C29/70 ,  C07C31/28 ,  C01P2006/80

    摘要： Niobium (V) and tantalum (V) halides are converted to Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 that are free of detectable levels of halide in a two step process. In the first step, the metal halide is reacted with an alcohol and with a replacement species, such as ammonia, which reacts with the halide. This produces a metal alkoxide which is soluble and a halide salt of the replacement species which is insoluble in the alcohol and precipitates. After physically separating the alkoxide in alcohol solution from the precipitate, in a second step, the metal alkoxide is hydrolyzed with purified water to produce the oxide.

    摘要翻译： 将铌（V）和钽（V）卤化物转化为在两步法中不含可检测水平的卤化物的Nb 2 O 5和Ta 2 O 5。 在第一步骤中，金属卤化物与醇反应，并与其中的卤化物反应的替代物质例如氨反应。 这产生可溶的金属醇盐和不溶于醇并沉淀的替代物质的卤化物盐。 将醇溶液中的醇盐与沉淀物物理分离后，在第二步中，用净化水水解金属醇盐，生成氧化物。