公开(公告)号：US08614492B2

公开(公告)日：2013-12-24

申请号：US12605523

申请日：2009-10-26

申请人： Andres Bryant ,  Oki Gunawan ,  Shih-Hsien Lo ,  Jeffrey W Sleight

发明人： Andres Bryant ,  Oki Gunawan ,  Shih-Hsien Lo ,  Jeffrey W Sleight

IPC分类号： H01L29/84 ,  H01L21/00 ,  G01P15/08 ,  G01L9/00

CPC分类号： H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  G01B7/16 ,  G01B7/18 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/66439 ,  H01L29/775 ,  Y10S977/724 ,  Y10S977/938 ,  Y10S977/956

摘要： Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors and stress sensor integrated circuits include one or more pairs of gate-all-around field effect transistors, which include one or more nanowires as a channel region. The nanowires of each of the field effect transistors are configured to change in length in response to a mechanical stress transferred from an object. A voltage output difference from the field effect transistors indicates the magnitude of the transferred mechanical stress.

摘要翻译： 使用一个或多个纳米线场效应晶体管作为应力敏感元件的应力传感器和应力传感器集成电路，以及体现在用于设计，制造或测试集成电路的机器可读介质中的应力传感器集成电路的设计结构，以及 相关方法。 应力传感器和应力传感器集成电路包括一对或多对栅极全环场效应晶体管，其包括一个或多个纳米线作为沟道区。 每个场效应晶体管的纳米线被配置为响应于从物体传递的机械应力而改变长度。 与场效应晶体管的电压输出差异表示转移的机械应力的大小。

公开(公告)号：US20110095267A1

公开(公告)日：2011-04-28

申请号：US12605523

申请日：2009-10-26

申请人： Andres Bryant ,  Oki Gunawan ,  Shih-Hsien Lo ,  Jeffrey W. Sleight

发明人： Andres Bryant ,  Oki Gunawan ,  Shih-Hsien Lo ,  Jeffrey W. Sleight

IPC分类号： H01L29/06 ,  G06F17/50 ,  G01B7/16

CPC分类号： H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  G01B7/16 ,  G01B7/18 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/66439 ,  H01L29/775 ,  Y10S977/724 ,  Y10S977/938 ,  Y10S977/956

摘要： Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors and stress sensor integrated circuits include one or more pairs of gate-all-around field effect transistors, which include one or more nanowires as a channel region. The nanowires of each of the field effect transistors are configured to change in length in response to a mechanical stress transferred from an object. A voltage output difference from the field effect transistors indicates the magnitude of the transferred mechanical stress.

摘要翻译： 使用一个或多个纳米线场效应晶体管作为应力敏感元件的应力传感器和应力传感器集成电路，以及体现在用于设计，制造或测试集成电路的机器可读介质中的应力传感器集成电路的设计结构，以及 相关方法。 应力传感器和应力传感器集成电路包括一对或多对栅极全环场效应晶体管，其包括一个或多个纳米线作为沟道区。 每个场效应晶体管的纳米线被配置为响应于从物体传递的机械应力而改变长度。 与场效应晶体管的电压输出差异表示转移的机械应力的大小。

公开(公告)号：US20110012177A1

公开(公告)日：2011-01-20

申请号：US12505603

申请日：2009-07-20

申请人： Dureseti Chidambarrao ,  Oki Gunawan ,  Xiao Hu Liu ,  Amlan Majumdar ,  Lidija Sekaric ,  Jeffrey W. Sleight

发明人： Dureseti Chidambarrao ,  Oki Gunawan ,  Xiao Hu Liu ,  Amlan Majumdar ,  Lidija Sekaric ,  Jeffrey W. Sleight

IPC分类号： H01L29/775 ,  H01L21/335

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/7843

摘要： A structure and a method for a semiconductor including a nanostructure semiconductor channel. The semiconductor may include a dielectric and an electrode, the electrode attached to the dielectric, a semiconductor channel may be disposed proximate to the dielectric, wherein the semiconductor channel has an electric mobility and is configured to have at least one dimension, and wherein the dielectric may be configured to apply a force at the at least one dimension.

摘要翻译： 一种包括纳米结构半导体通道的半导体的结构和方法。 半导体可以包括电介质和电极，附着到电介质的电极，半导体沟道可以靠近电介质设置，其中半导体沟道具有电迁移率，并且被配置为具有至少一个维度，并且其中电介质 可以被配置为在至少一个维度施加力。

公开(公告)号：US08039292B2

公开(公告)日：2011-10-18

申请号：US12621226

申请日：2009-11-18

申请人： Supratik Guha ,  Oki Gunawan

发明人： Supratik Guha ,  Oki Gunawan

IPC分类号： H01L21/44

CPC分类号： H01L31/022433 ,  Y02E10/50

摘要： A photovoltaic cell and a method of forming an electrode grid on a photovoltaic semiconductor substrate of a photovoltaic cell are disclosed. In one embodiment, the photovoltaic cell comprises a photovoltaic semiconductor substrate; a back electrode electrically connected to a back surface of the substrate; and a front electrode electrically connected to a front surface of the substrate. The substrate, back electrode, and front electrode form an electric circuit for generating an electric current when said substrate absorbs light. The front electrode is comprised of a metal grid defining a multitude of holes. These holes may be periodic, aperiodic, or partially periodic. The front electrode may be formed by depositing nanospheres on the substrate; forming a metallic layer on the substrate, around the nanospheres; and removing the nanospheres, leaving an electrode grid defining a multitude of holes on the substrate.

摘要翻译： 公开了一种光伏电池和在光伏电池的光电半导体衬底上形成电极栅格的方法。 在一个实施例中，光伏电池包括光电半导体衬底; 电连接到所述基板的背面的背面电极; 以及电连接到所述基板的前表面的前电极。 当基板吸收光时，基板，背面电极和正面电极形成用于产生电流的电路。 前电极由限定多个孔的金属网格组成。 这些孔可以是周期性的，非周期性的或部分周期性的。 前电极可以通过在衬底上沉积纳米球而形成; 在纳米球周围在基底上形成金属层; 并去除纳米球，留下在基底上限定多个孔的电极网格。

公开(公告)号：US20100221866A1

公开(公告)日：2010-09-02

申请号：US12480163

申请日：2009-06-08

申请人： William Graham ,  Supratik Guha ,  Oki Gunawan ,  George S. Tulevski ,  Kejia Wang ,  Ying Zhang

发明人： William Graham ,  Supratik Guha ,  Oki Gunawan ,  George S. Tulevski ,  Kejia Wang ,  Ying Zhang

IPC分类号： H01L21/28

CPC分类号： H01L31/035227 ,  Y10S977/813 ,  Y10S977/827

摘要： Techniques for fabricating nanowire/microwire-based solar cells are provided. In one, a method for fabricating a solar cell is provided. The method includes the following steps. A doped substrate is provided. A monolayer of spheres is deposited onto the substrate. The spheres include nanospheres, microspheres or a combination thereof The spheres are trimmed to introduce space between individual spheres in the monolayer. The trimmed spheres are used as a mask to pattern wires in the substrate. The wires include nanowires, microwires or a combination thereof A doped emitter layer is formed on the patterned wires. A top contact electrode is deposited over the emitter layer. A bottom contact electrode is deposited on a side of the substrate opposite the wires.

摘要翻译： 提供了制造纳米线/微丝基太阳能电池的技术。 其中，提供了太阳能电池的制造方法。 该方法包括以下步骤。 提供掺杂的衬底。 单层球体沉积在基材上。 球体包括纳米球，微球或其组合。球体被修整以在单层中的单个球体之间引入空间。 修剪的球体用作掩模以在基底中图案线。 导线包括纳米线，微丝或其组合。在图案化导线上形成掺杂的发射极层。 顶部接触电极沉积在发射极层上。 底部接触电极沉积在与电线相对的基板的一侧上。

公开(公告)号：US09103652B2

公开(公告)日：2015-08-11

申请号：US13529097

申请日：2012-06-21

申请人： Oki Gunawan

发明人： Oki Gunawan

IPC分类号： G01B7/14 ,  G01B7/06 ,  G01R27/00 ,  G01B7/02

CPC分类号： G01B7/087 ,  G01B7/023 ,  G01R27/00

摘要： A non-contact sheet conductivity measurement system includes a magnetic head apparatus, a computing system coupled to the magnetic head apparatus, a linear actuator coupled to the magnetic head apparatus, a motor controller coupled to the magnetic head apparatus, a power supply coupled to the magnetic head apparatus and a frequency meter coupled to the magnetic head apparatus.

摘要翻译： 非接触片电导率测量系统包括磁头设备，耦合到磁头设备的计算系统，耦合到磁头设备的线性致动器，耦合到磁头设备的电机控制器，耦合到磁头设备的电源 磁头装置和耦合到磁头装置的频率计。

公开(公告)号：US20140032166A1

公开(公告)日：2014-01-30

申请号：US13568619

申请日：2012-08-07

申请人： Oki Gunawan

发明人： Oki Gunawan

IPC分类号： G06F15/00

CPC分类号： G01B7/14 ,  G01B7/023 ,  G01R33/0035

摘要： One or more embodiments are directed to a magnet configured to be coupled to an object under test, an array of sensors configured to measure a magnetic field associated with the magnet, and a circuit configured to obtain voltage readings based on the measured magnetic field from the array of sensors and compute a distance between the array of sensors and the magnet based on the obtained voltage readings.

公开(公告)号：US20130316512A1

公开(公告)日：2013-11-28

申请号：US13495148

申请日：2012-06-13

申请人： Oki Gunawan ,  Amlan Majumdar ,  Katherine L. Saenger

发明人： Oki Gunawan ,  Amlan Majumdar ,  Katherine L. Saenger

IPC分类号： H01L49/02

CPC分类号： H01L28/40 ,  H01L27/0203 ,  H01L27/0808 ,  H01L29/93

摘要： Semiconductor variable capacitor (varactor) devices are provided, which are formed with an array of radial p-n junction structures to provide improved dynamic range and sensitivity. For example, a semiconductor varactor device includes a doped semiconductor substrate having first and second opposing surfaces and an array of pillar structures formed on the first surface of the doped semiconductor substrate. Each pillar structure includes a radial p-n junction structure. A first metallic contact layer is conformally formed over the array of pillar structures on the first surface of the doped semiconductor substrate. A second metallic contact layer formed on the second surface of the doped semiconductor substrate. An insulating layer is formed on the doped semiconductor substrate surrounding the array of pillar structures.

摘要翻译： 提供半导体可变电容器（变容二极管）器件，其形成有径向p-n结结构的阵列，以提供改善的动态范围和灵敏度。 例如，半导体变容二极管器件包括具有第一和第二相对表面的掺杂半导体衬底和形成在掺杂半导体衬底的第一表面上的柱结构阵列。 每个柱结构包括径向p-n结结构。 第一金属接触层在掺杂半导体衬底的第一表面上的柱结构阵列上共形地形成。 形成在掺杂半导体衬底的第二表面上的第二金属接触层。 在包围柱结构阵列的掺杂半导体衬底上形成绝缘层。

公开(公告)号：US20130269764A1

公开(公告)日：2013-10-17

申请号：US13445406

申请日：2012-04-12

申请人： David Aaron Randolph Barkhouse ,  Tayfun Gokmen ,  Oki Gunawan ,  Richard Alan Haight

发明人： David Aaron Randolph Barkhouse ,  Tayfun Gokmen ,  Oki Gunawan ,  Richard Alan Haight

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/0326 ,  Y02E10/50

摘要： Techniques for increasing conversion efficiency of thin film photovoltaic devices through back contact work function modification are provided. In one aspect, a photovoltaic device is provided having a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer. The absorber layer preferably has thickness that is less than a depletion width+an accumulation width+a carrier diffusion length.

摘要翻译： 提供了通过背接触功能修改来提高薄膜光伏器件的转换效率的技术。 一方面，提供一种具有基板的光伏器件; 在所述衬底上的背接触，其中所述背接触的至少一部分具有大于约4.5电子伏特的功函数; 在与所述基板相对的所述背接触侧的吸收层; 在与吸收层相反的一侧的缓冲层; 以及在缓冲层的与吸收层相对的一侧的顶部电极。 吸收层优选具有小于耗尽宽度+积累宽度+载体扩散长度的厚度。

公开(公告)号：US08551558B2

公开(公告)日：2013-10-08

申请号：US12039953

申请日：2008-02-29

申请人： Supratik Guha ,  Oki Gunawan

发明人： Supratik Guha ,  Oki Gunawan

IPC分类号： B05D5/12 ,  C23C16/00 ,  H01L21/00

CPC分类号： H01L31/07 ,  H01L31/022425 ,  H01L31/02327 ,  H01L31/0256 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

摘要： Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.