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    Diamond supported photocathodes for electron sources
    1.
    发明授权
    Diamond supported photocathodes for electron sources 失效
    用于电子源的金刚石负载光电阴极

    公开(公告)号：US06759800B1

    公开(公告)日：2004-07-06

    申请号：US09363926

    申请日：1999-07-29

    申请人： Andres Fernandez ,  Timothy Thomas ,  Xiaolan Chen ,  Steven T. Coyle ,  Ming Yu ,  Marian Mankos

    发明人： Andres Fernandez ,  Timothy Thomas ,  Xiaolan Chen ,  Steven T. Coyle ,  Ming Yu ,  Marian Mankos

    IPC分类号： H01J4006

    CPC分类号： B82Y10/00 ,  H01J1/34

    摘要： A photocathode as a source of electron beams, having a substrate of optically transmissive diamond and a photoemitter. A photocathode with a single emitting region provides a single electron beam; a photocathode with multiple emitting regions provides multiple electron beams. The photoemitter is positioned on the side of the diamond substrate opposite the surface on which the illumination is incident, and has an irradiation region at the contact with the optically transmissive diamond, and an emission region opposite the irradiation region, these regions being defined by the path of the illumination. The diamond substrate at the irradiation region/emission region interface conducts heat away from this focused region of illumination on the photocathode. Alternately, a diamond film is used for heat conduction, while another material is used as a substrate to provide structural support. The thermal conductivity of diamond is at least three orders of magnitude greater than that of fused silica, which is an alternative substrate material for photocathodes. This allows for efficient conduction of heat away from the irradiation region/emission region interface, and therefore allows higher currents to be achieved from the photocathode. This, in turn, permits higher throughput rates in applications including electron beam lithography.

    摘要翻译： 作为电子束源的光电阴极，具有透光金刚石和光电发射体的基底。 具有单个发射区域的光电阴极提供单个电子束; 具有多个发射区域的光电阴极提供多个电子束。 光发射器位于与照射入射的表面相对的金刚石基底的一侧，并且具有与光学透射金刚石接触的照射区域和与照射区域相对的发射区域，这些区域由 照明路径。 在照射区域/发射区域界面处的金刚石基底将热量远离该聚焦照明区域在光电阴极上。 或者，金刚石膜用于热传导，而另一种材料用作基底以提供结构支撑。 金刚石的热导率比熔融石英的热导率高至少三个数量级，熔融石英是光电阴极的替代基材。 这允许热量从照射区域/发射区域界面有效地传导，因此允许从光电阴极获得更高的电流。 这反过来又允许在包括电子束光刻的应用中更高的生产率。

    Electron beam column using high numerical aperture photocathode source illumination
    3.
    发明授权
    Electron beam column using high numerical aperture photocathode source illumination 失效
    电子束柱采用高数值孔径光电阴极源照明

    公开(公告)号：US06448568B1

    公开(公告)日：2002-09-10

    申请号：US09365604

    申请日：1999-07-30

    申请人： Paul C. Allen ,  Xiaolan Chen ,  Douglas E. Holmgren ,  Samuel C. Howells

    发明人： Paul C. Allen ,  Xiaolan Chen ,  Douglas E. Holmgren ,  Samuel C. Howells

    IPC分类号： H01J4006

    CPC分类号： B82Y10/00 ,  G03F7/70325 ,  G03F7/70375 ,  G03F7/70808 ,  H01J37/073 ,  H01J2237/3175

    摘要： A lithography apparatus including both a laser beam source and an electron beam column, where the electron beam column has a support(in one embodiment a window in the column housing) having an index of refraction n. The support, having a photocathode source material disposed on its remote surface, is located in some embodiments such that the internal angle of the incident laser beam is &thgr; with respect to a line perpendicular to the remote surface. The numerical aperture of the substrate(equal to nsin &thgr;) is greater than one in one embodiment, resulting in a high resolution spot size diameter incident on the photocathode source material at the remote surface. Incident energy from the laser beam thereby emits a corresponding high resolution electron beam from the photocathode source material. Electromagnetic lens components are disposed downstream in the electron beam column to demagnify the electron beam. This apparatus allows the continuously decreasing minimum feature dimension sizes for semiconductor electron beam lithography.

    摘要翻译： 包括激光束源和电子束列的光刻设备，其中电子束柱具有折射率n的支撑（在一个实施例中为柱壳体中的窗口）。 具有设置在其远程表面上的光电阴极源材料的支撑件位于一些实施例中，使得入射激光束的内角相对于垂直于远程表面的线是θ。 在一个实施例中，衬底的数值孔径（等于nsinθ）大于一个，导致入射到远端表面的光电阴极源材料上的高分辨率光斑尺寸直径。 因此来自激光束的入射能量由此从光电阴极源材料发射出相应的高分辨率电子束。 电磁透镜部件设置在电子束列的下游，以使电子束缩小。 该装置允许连续减小用于半导体电子束光刻的最小特征尺寸尺寸。

    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns
    4.
    发明授权
    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns 有权
    用于整合光学和干涉光刻以产生复杂图案的方法和装置

    公开(公告)号：US06233044B1

    公开(公告)日：2001-05-15

    申请号：US09273399

    申请日：1999-03-22

    申请人： Steven R. J. Brueck ,  Xiaolan Chen ,  Andrew Frauenglass ,  Saleem H. Zaidi ,  Janusz Wilczynski

    发明人： Steven R. J. Brueck ,  Xiaolan Chen ,  Andrew Frauenglass ,  Saleem H. Zaidi ,  Janusz Wilczynski

    IPC分类号： G03B2754

    CPC分类号： G03F7/70108 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70308 ,  G03F7/70408 ,  G03F7/7045

    摘要： The present invention provides methods and apparatus for defining a single structure on a semiconductor wafer by spatial frequency components whereby some of the spatial frequency components are derived by optical lithography and some by interferometric lithographic techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone.

    摘要翻译： 本发明提供用于通过空间频率分量在半导体晶片上定义单个结构的方法和装置，由此通过光学光刻获得一些空间频率分量，而通过干涉光刻技术导出一些空间频率分量。 干涉光刻成像高频分量，而光刻成像低频分量。 光学收集许多空间频率，干涉测量将空间频率移动到高空间频率。 因此，由于掩模不需要提供高空间频率，所以掩模被配置为仅产生低频分量，从而允许制造具有较大结构的更简单的掩模。 这些方法和设备有助于在单次曝光中以比目前可用的已知光刻单独的分辨率更高的分辨率编写更复杂的重复和非重复图案。

    High efficacy antisense RIαPKA poly-DNP oligoribonucleotides
    8.
    发明授权
    High efficacy antisense RIαPKA poly-DNP oligoribonucleotides 失效
    高效反义RIalphaPKA多聚DNP寡核糖核苷酸

    公开(公告)号：US07528117B2

    公开(公告)日：2009-05-05

    申请号：US10728491

    申请日：2003-12-05

    申请人： Jui H. Wang ,  Long Shen ,  Xiaolan Chen

    发明人： Jui H. Wang ,  Long Shen ,  Xiaolan Chen

    IPC分类号： A01N43/04 ,  C12Q1/68 ,  C12P19/34 ,  C07H21/02 ,  C07H21/04

    CPC分类号： C12N15/113 ,  A61K38/00 ,  C12N15/1137 ,  C12N2310/321 ,  C12N2310/3529

    摘要： The present invention discloses antisense poly-2′-O-(2,4-dinitrophenyl) oligoribonucleotides which are capable of down regulating the expression of the RIα subunit of protein kinase A. An example is 5′-GGCUGCGUGCCUCCUCACUGG (named antisense poly-DNP RNA-21) or a sequence which has a one-base mismatch therewith. The antisense oligoribonucleotide can be synthesized by in vitro transcription followed by chemical derivatization. The base sequence of the oligoribonucleotides is complementary to that of nt 110 to 130 in RIα/PKA mRNA. The antisense poly-DNP RNA-21 was found to inhibit cell growth with IC50 values in the nanomolar range. These oligonucleotides can be used as effective anti-cancer agents.

    摘要翻译： 本发明公开了能够下调蛋白激酶A的RIalpha亚基表达的反式多聚-2'-O-（2,4-二硝基苯基）寡核糖核苷酸。一个实例是5'-GGCUGCGUGCCUCCUCACUGG（命名为反义多聚DNP RNA-21）或与其单碱基错配的序列。 反义寡核苷酸可以通过体外转录，然后进行化学衍生化合成。 寡核糖核苷酸的碱基序列与RIalpha / PKA mRNA中的nt 110至130的碱基序列互补。 发现反义多聚DNP RNA-21抑制细胞生长，其IC50值在纳摩尔范围内。 这些寡核苷酸可以用作有效的抗癌剂。

    Method and apparatus for improving pattern fidelity in diffraction-limited imaging
    9.
    发明授权
    Method and apparatus for improving pattern fidelity in diffraction-limited imaging 有权
    用于改善衍射极限成像中图案保真度的方法和装置

    公开(公告)号：US06320648B1

    公开(公告)日：2001-11-20

    申请号：US09414861

    申请日：1999-10-12

    申请人： Steven R. J. Brueck ,  Xiaolan Chen

    发明人： Steven R. J. Brueck ,  Xiaolan Chen

    IPC分类号： G03B2742

    CPC分类号： G03F7/70091 ,  G03F7/70308 ,  G03F7/70425

    摘要： The present invention involves the use of pupil plane filters to enhance optical imaging for both lithography and microscopy. The present invention includes numerous pupil plane filter strategies for enhancing optical lithography. A square pupil plane filter suitably restricts the imaging to a nearly diffraction limited regime. Moreover, pupil plane filters are suitably used in off-axis illumination (OAI) and imaging interferometric lithography (ILL). The techniques of OAI and ILL along with the use of pupil-plane filters are applicable in, for example, any diffraction-limited situation where the limit is imposed by the characteristics of the optical system rather than the transmission medium and where the illumination system is under the control of the experimenter.

    摘要翻译： 本发明涉及使用光瞳平面滤光片来增强光刻和显微镜两者的光学成像。 本发明包括用于增强光学光刻的许多光瞳平面滤波器策略。 平方瞳平面滤光片适当地将成像限制在接近衍射限制的状态。 此外，瞳孔平面滤光片适用于离轴照明（OAI）和成像干涉光刻（ILL）。 OAI和ILL的技术以及使用光瞳平面滤波器的技术适用于例如任何衍射限制的情况，其中限制是由光学系统的特性而不是传输介质施加的，而照明系统是 在实验者的控制下。