摘要:
The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.
摘要:
The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.
摘要:
A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.
摘要:
A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.
摘要:
A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.