公开(公告)号：US20220157604A1

公开(公告)日：2022-05-19

申请号：US17099454

申请日：2020-11-16

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying WU ,  Yi-Chiau HUANG ,  Zhiyuan YE ,  Schubert S. CHU ,  Errol Antonio C. SANCHEZ ,  Brian Hayes BURROWS

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C23C16/52

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

公开(公告)号：US20250101629A1

公开(公告)日：2025-03-27

申请号：US18976591

申请日：2024-12-11

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Zhiyuan YE ,  Richard O. COLLINS ,  Brian Hayes BURROWS

IPC: C30B25/08 ,  C30B25/14 ,  H01L21/67

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

公开(公告)号：US20220254634A1

公开(公告)日：2022-08-11

申请号：US17579762

申请日：2022-01-20

Applicant: Applied Materials, Inc.

Inventor： Brian Hayes BURROWS ,  Ala MORADIAN ,  Zuoming ZHU ,  Chia Cheng CHIN

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/458

Abstract: A method and apparatus for providing uniform heating of substrates disposed within a processing chamber is provided. The apparatus includes one or more heating coils disposed in the processing chamber. The one or more heating coils are electrically coupled to a power source using heater rods. The heater rods are coupled to a socket on a distal end opposite the connection to the heating coils. The socket includes a feedthrough and a cooling plate configured to remove contaminants, such as methane, from the area surrounding the heater rod.

公开(公告)号：US20220195617A1

公开(公告)日：2022-06-23

申请号：US17131290

申请日：2020-12-22

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Zhiyuan YE ,  Richard O. COLLINS ,  Brian Hayes BURROWS

IPC: C30B25/08 ,  C30B25/14

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal scaling grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

公开(公告)号：US20170362702A9

公开(公告)日：2017-12-21

申请号：US14195423

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： David Keith CARLSON ,  Satheesh KUPPURAO ,  Howard BECKFORD ,  Herman DINIZ ,  Kailash Kiran PATALAY ,  Brian Hayes BURROWS ,  Jeffery Ronald CAMPBELL ,  Zuoming ZHU ,  Xiaowei LI ,  Errol Antonio SANCHEZ

IPC: C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02

CPC classification number: C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T137/0318

Abstract: In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

公开(公告)号：US20250087485A1

公开(公告)日：2025-03-13

申请号：US18954712

申请日：2024-11-21

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying WU ,  Yi-Chiau HUANG ,  Zhiyuan YE ,  Schubert S. CHU ,  Errol Antonio C. SANCHEZ ,  Brian Hayes BURROWS

IPC: H01L21/02 ,  C30B25/08 ,  C30B25/18 ,  C30B29/06 ,  C30B33/02 ,  C30B33/12 ,  C30B35/00 ,  H01L21/3065 ,  H01L21/324

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

公开(公告)号：US20220322492A1

公开(公告)日：2022-10-06

申请号：US17223940

申请日：2021-04-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Brian Hayes BURROWS ,  Zhiyuan YE ,  Richard O. COLLINS ,  Enle CHOO ,  Danny D. WANG ,  Shainish NELLIKKA ,  Toshiyuki NAKAGAWA ,  Abhishek DUBE ,  Ala MORADIAN ,  Kartik Bhupendra SHAH

IPC: H05B3/00

Abstract: A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

公开(公告)号：US20250132155A1

公开(公告)日：2025-04-24

申请号：US18983235

申请日：2024-12-16

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying WU ,  Yi-Chiau HUANG ,  Zhiyuan YE ,  Schubert S. CHU ,  Errol Antonio C. SANCHEZ ,  Brian Hayes BURROWS

IPC: H01L21/02 ,  C30B25/08 ,  C30B25/18 ,  C30B29/06 ,  C30B33/02 ,  C30B33/12 ,  C30B35/00 ,  H01L21/3065 ,  H01L21/324

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

公开(公告)号：US20230167581A1

公开(公告)日：2023-06-01

申请号：US17919896

申请日：2021-07-16

Applicant: Applied Materials, Inc.

Inventor： Kartik Bhupendra SHAH ,  Schubert S. CHU ,  Adel George TANNOUS ,  Ala MORADIAN ,  Nyi Oo MYO ,  Surajit KUMAR ,  Zuoming ZHU ,  Brian Hayes BURROWS ,  Vishwas Kumar PANDEY ,  Shu-Kwan LAU ,  Srinivasa RANGAPPA

IPC: C30B25/10 ,  H01L21/687 ,  H01L21/67 ,  C30B25/18 ,  C30B25/08 ,  C23C16/02

CPC classification number: C30B25/105 ,  H01L21/68771 ,  H01L21/68764 ,  H01L21/67248 ,  H01L21/68757 ,  C30B25/186 ,  C30B25/08 ,  C23C16/0209 ,  C23C16/0227

Abstract: A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

公开(公告)号：US20140175054A1

公开(公告)日：2014-06-26

申请号：US14195423

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： David Keith CARLSON ,  Satheesh KUPPURAO ,  Howard BECKFORD ,  Herman DINIZ ,  Kailash Kiran PATALAY ,  Brian Hayes BURROWS ,  Jeffery Ronald CAMPBELL ,  Zuoming ZHU ,  Xiaowei LI ,  Errol Antonio SANCHEZ

IPC: C23C16/455 ,  C23C16/22

CPC classification number: C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T137/0318

Abstract: In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Abstract translation: 在一个实施例中，气体分配组件包括注入块，其具有至少一个入口，以将前体气体从至少两个气体源输送到多个增压室，多孔板限定多个通气室中的每一个的至少一侧， 至少一个辐射能源，其定位在所述多个增压室的每一个内，以从所述至少两个气体源中的一个或两个向所述前体气体提供能量，并且使通电气体通过所述多孔板中的开口并进入腔室，并且 可变电源耦合到位于多个通风室中的每一个内的每个辐射能源。