公开(公告)号：US20240141498A1

公开(公告)日：2024-05-02

申请号：US18085402

申请日：2022-12-20

申请人： Applied Materials, Inc.

发明人： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Manjunath SUBBANNA ,  Errol Antonio C. SANCHEZ ,  Abhishek DUBE ,  Erika R. WARRICK ,  Martin Jeffrey SALINAS ,  Chandra MOHAPATRA

IPC分类号： C23C16/52 ,  C23C16/448 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/4481 ,  C23C16/45561

摘要： The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

公开(公告)号：US20240018658A1

公开(公告)日：2024-01-18

申请号：US18085371

申请日：2022-12-20

申请人： Applied Materials, Inc.

发明人： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  John TOLLE ,  Manjunath SUBBANNA ,  Martin Jeffrey SALINAS ,  Chia Cheng CHIN ,  Thomas KIRSCHENHEITER ,  Saurabh CHOPRA

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

CPC分类号： C23C16/45591 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

摘要： The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

公开(公告)号：US20230075715A1

公开(公告)日：2023-03-09

申请号：US17869529

申请日：2022-07-20

申请人： Applied Materials, Inc.

发明人： Saurabh CHOPRA ,  Martin Jeffrey SALINAS ,  Masato ISHII ,  Sheng-Chen TWAN ,  Srividya NATARAJAN

IPC分类号： C23C16/44 ,  H01L21/02 ,  H01L21/67

摘要： In one aspect, a process operation is conducted at a first pressure in a process chamber, and an epitaxial deposition operation is conducted at an atmospheric pressure in an epitaxial deposition chamber. The atmospheric pressure is greater than the first pressure. The process chamber is mounted to a first mainframe that operates at the first pressure (a reduced pressure), and the epitaxial deposition chamber is mounted to a second mainframe that operates at the atmospheric chamber. In one aspect, the process chamber is a cleaning chamber (such as a pre-clean chamber) and the process operation is a cleaning operation. In one aspect, the process chamber is an atmospheric pressure epitaxial deposition chamber and the process operation is an atmospheric pressure epitaxial deposition operation.

公开(公告)号：US20240254627A1

公开(公告)日：2024-08-01

申请号：US18122484

申请日：2023-03-16

申请人： Applied Materials, Inc.

发明人： Raja Murali DHAMODHARAN ,  Kalaivanan MOHANADASS ,  Aniketnitin PATIL ,  Martin Jeffrey SALINAS ,  Shu-Kwan LAU

IPC分类号： C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC分类号： C23C16/45563 ,  C23C16/4586 ,  C30B25/12 ,  C30B25/14

摘要： Embodiments of the present disclosure relate to injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing operations. In one or more embodiments, the liners facilitate gas flow uniformity in batch processing. In one or more embodiments, a liner includes a plurality of inlet openings on an inlet side, the plurality of inlet openings extending into an outer face of the liner. The plurality of inlet openings include a plurality of first inlet openings that include a first row extending into a first side face, and a second row extending into a second side face. The plurality of inlet openings include a plurality of second inlet openings extending between an inner face and the outer face. The liner includes one or more outlet openings on an outlet side. The outlet side opposes the inlet side. The one or more outlet openings extend into the inner face.

公开(公告)号：US20130105088A1

公开(公告)日：2013-05-02

申请号：US13646069

申请日：2012-10-05

申请人： APPLIED MATERIALS, INC.

发明人： Aniruddha PAL ,  Martin Jeffrey SALINAS ,  Dmitry LUBOMIRSKY ,  Imad YOUSIF ,  Andrew NGUYEN

IPC分类号： H01L21/306

CPC分类号： H01L21/67103 ,  C23C16/4585

摘要： Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

摘要翻译： 本文提供了半导体处理装置。 在一些实施例中，用于处理衬底的装置可以包括：围绕衬底支撑件同心地设置的第一环，所述第一环被配置为在处理期间将衬底定位在衬底支撑件顶部; 以及设置在所述基板支撑件和所述第一环之间的第二环，所述第二环构造成提供从所述第一环到所述基板支撑件的传热路径。

公开(公告)号：US20240198468A1

公开(公告)日：2024-06-20

申请号：US18106155

申请日：2023-02-06

申请人： Applied Materials, Inc.

发明人： Aniketnitin PATIL ,  Raja Murali DHAMODHARAN ,  Martin Jeffrey SALINAS ,  Shu-Kwan LAU

IPC分类号： B23Q3/10 ,  C30B25/12 ,  C30B35/00

CPC分类号： B23Q3/106 ,  C30B25/12 ,  C30B35/005

摘要： The present disclosure relates to lift assemblies, and related methods and components, for substrate processing chambers. In one implementation, a lift assembly for disposition in relation to a substrate processing chamber includes a first motor, a first drive assembly coupled to the first motor, and a first support block coupled to the first drive assembly. The first motor is configured to linearly move the first support block using the first drive assembly. The lift assembly includes a second motor, a second drive assembly coupled to the second motor, and a second support block coupled to the second drive assembly. The second motor is configured to linearly move the second support block using the second drive assembly, and the second motor is configured to linearly move the second support block independently of the first motor linearly moving the first support block.

公开(公告)号：US20240035162A1

公开(公告)日：2024-02-01

申请号：US18156102

申请日：2023-01-18

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Tao SHENG ,  Martin Jeffrey SALINAS

IPC分类号： C23C16/46 ,  C23C16/44 ,  H01L21/68 ,  H01L21/67 ,  C23C16/52 ,  C23C16/458

CPC分类号： C23C16/46 ,  C23C16/4408 ,  H01L21/681 ,  H01L21/67259 ,  H01L21/67017 ,  C23C16/52 ,  C23C16/4583

摘要： Embodiments described herein relate semiconductor manufacturing and processing. More particularly, a processing systems for auto correcting misalignments of substrates in process chambers is provided. The processing system includes a process chamber having a substrate support disposed within a chamber volume of the process chamber. The substrate support includes a pocket for receiving a substrate, and a plurality of flow conduits extending between a top surface of the pocket and a bottom surface of the substrate support. An imaging device is coupled to the process chamber and configured to monitor a position of a substrate when loaded in the pocket of the substrate support.

公开(公告)号：US20240021444A1

公开(公告)日：2024-01-18

申请号：US18074239

申请日：2022-12-02

申请人： Applied Materials, Inc.

发明人： Manjunath SUBBANNA ,  Ala MORADIAN ,  Errol Antonio C. SANCHEZ ,  Zuoming ZHU ,  Peydaye Saheli GHAZAL ,  Martin Jeffrey SALINAS ,  Aniketnitin PATIL ,  Raja Murali DHAMODHARAN ,  Shu-Kwan LAU

IPC分类号： H01L21/67 ,  H01L21/20 ,  C23C16/44 ,  C23C16/455

CPC分类号： H01L21/67017 ,  H01L21/67103 ,  H01L21/20 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67739

摘要： The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.

公开(公告)号：US20230402268A1

公开(公告)日：2023-12-14

申请号：US17836657

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Songjae LEE ,  Masato ISHII ,  Martin TRUEMPER ,  Richard O. COLLINS ,  Martin Jeffrey SALINAS ,  Yong ZHENG ,  Anita ZHAO ,  Adele MARIADASS ,  Christophe MARCADAL ,  Henry BARANDICA ,  Ernesto J. ULLOA

IPC分类号： H01J37/32 ,  C23C14/02 ,  B08B7/00 ,  B08B13/00

CPC分类号： H01J37/32834 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32899 ,  C23C14/022 ,  B08B7/0035 ,  B08B13/00 ,  H01J37/32825 ,  H01J2237/335 ,  H01J2237/186 ,  H01J2237/182

摘要： A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.

公开(公告)号：US20190198295A1

公开(公告)日：2019-06-27

申请号：US16286152

申请日：2019-02-26

申请人： Applied Materials, Inc.

发明人： Aniruddha PAL ,  Victor CALDERON ,  Martin Jeffrey SALINAS ,  Valentin N. TODOROW

IPC分类号： H01J37/32

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32633

摘要： Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.