公开(公告)号：US11837448B2

公开(公告)日：2023-12-05

申请号：US17242059

申请日：2021-04-27

申请人： Applied Materials, Inc.

发明人： Shuran Sheng ,  Lin Zhang ,  Jiyong Huang ,  Jang Seok Oh ,  Joseph C. Werner ,  Nitin Khurana ,  Ganesh Balasubramanian ,  Jennifer Y. Sun ,  Xinhai Han ,  Zhijun Jiang

IPC分类号： H01J37/32 ,  C23C16/44 ,  B08B7/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/335 ,  H01J2237/3321

摘要： Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

公开(公告)号：US10883932B2

公开(公告)日：2021-01-05

申请号：US16455689

申请日：2019-06-27

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Fa Ji ,  Jang Seok Oh ,  Patrick L. Smith ,  Shawyon Jafari ,  Ralph Peter Antonio

IPC分类号： G01N21/53 ,  G01N1/22 ,  H01L21/67 ,  H01L21/677 ,  G01N15/00 ,  G01N15/06 ,  G01N15/02

摘要： An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US10655223B2

公开(公告)日：2020-05-19

申请号：US16268194

申请日：2019-02-05

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505

摘要： Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

公开(公告)号：US10002745B2

公开(公告)日：2018-06-19

申请号：US15145750

申请日：2016-05-03

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh ,  Xinhai Han

IPC分类号： H01J37/32

CPC分类号： H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

摘要： Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US12068180B2

公开(公告)日：2024-08-20

申请号：US16247026

申请日：2019-01-14

申请人： Applied Materials, Inc.

发明人： Xuesong Lu ,  Lin Zhang ,  Joseph C. Werner ,  Jang Seok Oh ,  Balaji Pasupathy ,  Michael W. Johnson

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01K3/00 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

CPC分类号： H01L21/67248 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02 ,  H01L21/02312 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/68742 ,  H01J2237/24585 ,  H01J2237/3321

摘要： Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US10365216B2

公开(公告)日：2019-07-30

申请号：US15793458

申请日：2017-10-25

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Fa Ji ,  Jang Seok Oh ,  Patrick L. Smith ,  Shawyon Jafari ,  Ralph Peter Antonio

IPC分类号： G01N21/53 ,  G01N1/22 ,  H01L21/67 ,  H01L21/677 ,  G01N15/02 ,  G01N15/00 ,  G01N15/06

摘要： An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US10208380B2

公开(公告)日：2019-02-19

申请号：US15334431

申请日：2016-10-26

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32

摘要： Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.