公开(公告)号：US11851759B2

公开(公告)日：2023-12-26

申请号：US18083173

申请日：2022-12-16

申请人： Applied Materials, Inc.

发明人： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

CPC分类号： C23C16/45565 ,  C23C16/4583 ,  C23C16/45536 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/3321

摘要： A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US11798803B2

公开(公告)日：2023-10-24

申请号：US16844794

申请日：2020-04-09

申请人： Applied Materials, Inc.

发明人： Daemian Raj Benjamin Raj ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Abhigyan Keshri ,  Allison Yau

IPC分类号： H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H10B41/20 ,  H10B43/20

CPC分类号： H01L21/022 ,  C23C16/4583 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H10B41/20 ,  H10B43/20

摘要： In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US11530482B2

公开(公告)日：2022-12-20

申请号：US16894355

申请日：2020-06-05

申请人： Applied Materials, Inc.

发明人： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

摘要： A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US12110590B2

公开(公告)日：2024-10-08

申请号：US18381534

申请日：2023-10-18

申请人： Applied Materials, Inc.

发明人： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/45536 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/3321

摘要： A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20220020570A1

公开(公告)日：2022-01-20

申请号：US16932794

申请日：2020-07-19

申请人： Applied Materials, Inc.

发明人： Sai Susmita Addepalli ,  Yue Chen ,  Abhigyan Keshri ,  Qiang Ma ,  Zhijun Jiang ,  Shailendra Srivastava ,  Daemian Raj Benjamin Raj ,  Ganesh Balasubramanian

IPC分类号： H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

摘要： Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.

公开(公告)号：US12094689B2

公开(公告)日：2024-09-17

申请号：US16932794

申请日：2020-07-19

申请人： Applied Materials, Inc.

发明人： Sai Susmita Addepalli ,  Yue Chen ,  Abhigyan Keshri ,  Qiang Ma ,  Zhijun Jiang ,  Shailendra Srivastava ,  Daemian Raj Benjamin Raj ,  Ganesh Balasubramanian

IPC分类号： H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  H01L21/67

CPC分类号： H01J37/32449 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32357 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069

摘要： Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.

公开(公告)号：US11339475B2

公开(公告)日：2022-05-24

申请号：US16678996

申请日：2019-11-08

申请人： Applied Materials, Inc.

发明人： Xinhai Han ,  Deenesh Padhi ,  Daemian Raj Benjamin Raj ,  Kristopher Enslow ,  Wenjiao Wang ,  Masaki Ogata ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Jonghoon Baek ,  Zakaria Ibrahimi ,  Juan Carlos Rocha-Alvarez ,  Tza-Jing Gung

IPC分类号： C23C16/505 ,  C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/34 ,  H01J37/32 ,  C23C16/40

摘要： An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US20210047730A1

公开(公告)日：2021-02-18

申请号：US16986438

申请日：2020-08-06

申请人： Applied Materials, Inc.

发明人： Sai Susmita Addepalli ,  Yue Chen ,  Zhijun Jiang ,  Shailendra Srivastava ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Greg Chichkanoff ,  Qiang Ma ,  Abhigyan Keshri ,  Xinhai Han ,  Ganesh Balasubramanian ,  Deenesh Padhi

IPC分类号： C23C16/458 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/52

摘要： Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.