公开(公告)号：US20140106083A1

公开(公告)日：2014-04-17

申请号：US13968057

申请日：2013-08-15

申请人： Applied Materials, Inc.

发明人： KAI WU ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC分类号： C23C16/452

CPC分类号： C23C16/452 ,  C23C16/08 ,  C23C16/50

摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

摘要翻译： 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US20190390949A1

公开(公告)日：2019-12-26

申请号：US16432104

申请日：2019-06-05

申请人： APPLIED MATERIALS, INC.

发明人： KAI WU ,  WEI MIN CHAN ,  PEIQI WANG ,  PAUL MA ,  EDWARD BUDIARTO ,  KUN XU ,  TODD J. EGAN

IPC分类号： G01B7/06 ,  C23C16/52

摘要： A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.

公开(公告)号：US20160300731A1

公开(公告)日：2016-10-13

申请号：US15091951

申请日：2016-04-06

申请人： APPLIED MATERIALS, INC.

发明人： KAI WU ,  VIKASH BANTHIA

IPC分类号： H01L21/3213 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of controlling an etch profile includes introducing a tungsten containing gas into a processing chamber; depositing a first tungsten film lining sidewalls of a feature formed in a substrate using the tungsten containing gas in the processing chamber; and treating the first tungsten film in the processing chamber using the tungsten containing gas until a particular etch profile is attained by repeatedly alternating between etching the first tungsten film for a first interval and stopping the etching of the first tungsten film for a second interval by at least one of purging the tungsten containing gas from the process chamber or turning off a power supply that powers the etching of the first tungsten film.

摘要翻译： 控制蚀刻轮廓的方法包括将含钨气体引入到处理室中; 在处理室中使用含钨气体沉积衬底中形成的特征的第一钨膜; 以及使用含钨气体处理处理室中的第一钨膜，直到通过在第一间隔刻蚀第一钨膜之间重复交替进行特定蚀刻轮廓，并且通过在第二间隔处停止第一钨膜的蚀刻而停止第二间隔的蚀刻 从处理室清除含钨气体的至少一个，或者关闭对第一钨膜的蚀刻提供动力的电源。

公开(公告)号：US20190157102A1

公开(公告)日：2019-05-23

申请号：US16196056

申请日：2018-11-20

申请人： APPLIED MATERIALS, INC.

发明人： GUOQIANG JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL F. MA ,  KAI WU ,  VIKASH BANTHIA ,  MEI CHANG ,  JIA YE ,  WENYU ZHANG ,  JING ZHOU

IPC分类号： H01L21/321 ,  H01L21/768 ,  H01L21/285

摘要： Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.

公开(公告)号：US20170148670A1

公开(公告)日：2017-05-25

申请号：US15358690

申请日：2016-11-22

申请人： APPLIED MATERIALS, INC.

发明人： YU LEI ,  VIKASH BANTHIA ,  KAI WU ,  XINYU FU ,  YI XU ,  KAZUYA DAITO ,  FEIYUE MA ,  PULKIT AGARWAL ,  CHI-CHOU LIN ,  DIEN-YEH WU ,  GUOQIANG JIAN ,  WEI V. TANG ,  JONATHAN BAKKE ,  MEI CHANG ,  SUNDAR RAMAMURTHY

IPC分类号： H01L21/768 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/311 ,  C23C16/44

CPC分类号： H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

摘要： Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20150294906A1

公开(公告)日：2015-10-15

申请号：US14300773

申请日：2014-06-10

申请人： APPLIED MATERIALS, INC.

发明人： LIQI WU ,  SANG HO YU ,  KAZUYA DAITO ,  KIE JIN PARK ,  KAI WU ,  DAVID THOMPSON

IPC分类号： H01L21/768

CPC分类号： H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

摘要： Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

摘要翻译： 本文提供了用于生产中间线（MOL）应用的金属有机钨的方法。 在一些实施例中，处理衬底的方法包括向处理室提供衬底，其中衬底包括形成在衬底的电介质层的第一表面中的特征; 将衬底暴露于由包括金属有机钨前体的第一气体形成的等离子体，以在该介电层的顶部和特征内形成钨阻挡层，其中在形成钨阻挡层期间处理室的温度小于约 225摄氏度; 以及在所述钨阻挡层上沉积钨填充层以将所述特征填充到所述第一表面。