中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.031 seconds)

    SUBSTRATE PROCESSING SYSTEM FOR MANUFACTURING TANDEM CELL STRUCTURES
    1.
    发明申请
    SUBSTRATE PROCESSING SYSTEM FOR MANUFACTURING TANDEM CELL STRUCTURES 有权

    公开(公告)号：US20240379896A1

    公开(公告)日：2024-11-14

    申请号：US18656825

    申请日：2024-05-07

    Applicant: Applied Materials, Inc.

    Inventor： Shinobu Abe ,  Scott Yongkee Chae ,  Shinichi Kurita ,  Duoyan Shen

    IPC: H01L31/20 ,  H01L31/0224 ,  H01L31/043

    Abstract: A substrate processing system includes two or more process tools including multiple process chambers to perform a corresponding substrate processing procedure and a substrate transport to transport substrates between the two or more process tools. The system further includes a control system to cause one or more first layers to be deposited on a substrate in one or more first process chambers to form a first cell of a tandem cell structure. The control system is further to cause the substrate to be transported from the one or more first process chambers to one or more second process chambers. A combination process tool includes the one or more second process chambers. The control system is further to cause one or more second layers to be deposited on the substrate in the one or more second process chambers to form a second cell of the tandem cell structure.

    Substrate support assembly with non-uniform gas flow clearance
    4.
    发明授权
    Substrate support assembly with non-uniform gas flow clearance 有权

    公开(公告)号：US10280510B2

    公开(公告)日：2019-05-07

    申请号：US15082015

    申请日：2016-03-28

    Applicant: Applied Materials, Inc.

    Inventor： Shinichi Kurita ,  Robin L. Tiner

    IPC: C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/687

    Abstract: The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.

    Plasma uniformity control by gas diffuser hole design
    5.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权

    公开(公告)号：US10262837B2

    公开(公告)日：2019-04-16

    申请号：US14932618

    申请日：2015-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

    Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    ISOLATION OF MICROWAVE SOURCES THROUGH BELLOWS
    7.
    发明申请
    ISOLATION OF MICROWAVE SOURCES THROUGH BELLOWS 有权
    通过BELLOWS分离微波源

    公开(公告)号：US20150002019A1

    公开(公告)日：2015-01-01

    申请号：US14371415

    申请日：2013-01-11

    Applicant: Applied Materials, Inc.

    Inventor： Benjamin M. Johnston ,  Shinichi Kurita

    IPC: C23C16/511 ,  H01J37/32

    CPC classification number: C23C16/511 ,  C23C16/4409 ,  H01J37/3222 ,  H01J37/32513

    Abstract: A bellows which forms a flexible coupling between the lid of a processing chamber and an antenna feed through. One embodiment provides an apparatus comprising a chamber body having a chamber lid, a feed through extending through the chamber lid, an antenna coupled to and extending through the feed through to an internal volume of the chamber body, and a bellows comprising a first flange, the first flange coupled to the feed through, a second flange, the second flange coupled to the chamber lid, and a center portion extending between the first flange and the second flange.

    Abstract translation: 波纹管，其形成处理室的盖和天线馈通之间的柔性耦合。 一个实施例提供了一种装置，其包括具有室盖的室主体，延伸穿过室盖的进料，耦合到并通过进料通过室主体内部空间的天线，以及包括第一凸缘的波纹管， 联接到进料通道的第一凸缘，第二凸缘，联接到室盖的第二凸缘以及在第一凸缘和第二凸缘之间延伸的中心部分。

    METHODS AND APPARATUS FOR PROVIDING A FLOATING SEAL FOR CHAMBER DOORS
    8.
    发明申请
    METHODS AND APPARATUS FOR PROVIDING A FLOATING SEAL FOR CHAMBER DOORS 审中-公开
    用于提供室门浮动密封的方法和装置

    公开(公告)号：US20140111074A1

    公开(公告)日：2014-04-24

    申请号：US14146332

    申请日：2014-01-02

    Applicant: Applied Materials, Inc.

    Inventor： Billy C. Leung ,  David E. Berkstresser ,  Shinichi Kurita

    IPC: E06B7/232

    CPC classification number: E06B7/232 ,  B65D53/00 ,  H01L21/67772

    Abstract: An apparatus is provided that includes a chamber wall section prone to deflection, a stationary section providing a sealing surface, and a flexible bellows attached to the chamber wall section and the stationary section. A system is also provided that includes a chamber including a chamber wall having an opening, a door disposed to seal the opening, a sealing surface adjacent the opening and isolated from the chamber wall, and a seal between the sealing surface and the chamber wall. Numerous other aspects are provided.

    Abstract translation: 提供了一种装置，其包括易于偏转的室壁部分，提供密封表面的固定部分和附接到室壁部分和固定部分的柔性波纹管。 还提供了一种系统，其包括：腔室，其包括具有开口的腔室壁，设置成密封开口的门，邻近开口并与腔壁隔离的密封表面，以及密封表面和腔壁之间的密封。 提供了许多其他方面。

    Grooved backing plate for standing wave compensation
    10.
    发明授权
    Grooved backing plate for standing wave compensation 有权

    公开(公告)号：US10373809B2

    公开(公告)日：2019-08-06

    申请号：US15274608

    申请日：2016-09-23

    Applicant: Applied Materials, Inc.

    Inventor： Shinichi Kurita ,  Robin L. Tiner

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/458 ,  C23C16/505

    Abstract: Implementations described herein generally relate to components and methods used in plasma processing, and more specifically relate to grooved surfaces for controlling RF return path lengths in plasma processing chambers and methods for forming the same. In one implementation, a backing plate for a plasma processing chamber is provided. The backing plate comprises a rectangular body. The rectangular body has a front surface, a back surface opposing the front surface, a first axis perpendicular to a center of the rectangular body and a plurality of grooves formed in the front surface. At least one groove of the plurality of grooves has a first length across the groove in a first location and a second length across the groove in a second location.

Patent Agency Ranking