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    System for tunable workpiece biasing in a plasma reactor
    1.
    发明授权
    System for tunable workpiece biasing in a plasma reactor 有权

    公开(公告)号：US10373804B2

    公开(公告)日：2019-08-06

    申请号：US15424405

    申请日：2017-02-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Travis Koh ,  Philip Allan Kraus ,  Leonid Dorf ,  Prabu Gopalraja

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

    Creating ion energy distribution functions (IEDF)
    3.
    发明授权
    Creating ion energy distribution functions (IEDF) 有权

    公开(公告)号：US10312048B2

    公开(公告)日：2019-06-04

    申请号：US15834939

    申请日：2017-12-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Hugh Rogers

    IPC: H01J37/08 ,  C23C14/54 ,  C23C16/50 ,  H01J37/248

    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

    Method and apparatus for controlling a magnetic field in a plasma chamber
    4.
    发明授权
    Method and apparatus for controlling a magnetic field in a plasma chamber 有权

    公开(公告)号：US10115566B2

    公开(公告)日：2018-10-30

    申请号：US15437757

    申请日：2017-02-21

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Steven Lane ,  Tza-Jing Gung ,  Kartik Ramaswamy ,  Travis Koh ,  Joseph F. Aubuchon ,  Yang Yang

    IPC: H01J37/32

    Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

    System and method for selective coil excitation in inductively coupled plasma processing reactors
    5.
    发明授权
    System and method for selective coil excitation in inductively coupled plasma processing reactors 有权

    公开(公告)号：US09659751B2

    公开(公告)日：2017-05-23

    申请号：US14341492

    申请日：2014-07-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Lawrence Wong ,  Joseph F. Aubuchon ,  Travis Koh

    IPC: H01J7/24 ,  H01J37/32

    CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

    Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

    System for tunable workpiece biasing in a plasma reactor
    7.
    发明授权
    System for tunable workpiece biasing in a plasma reactor 有权

    公开(公告)号：US10923320B2

    公开(公告)日：2021-02-16

    申请号：US16521094

    申请日：2019-07-24

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Travis Koh ,  Philip Allan Kraus ,  Leonid Dorf ,  Prabu Gopalraja

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

    Creating ion energy distribution functions (IEDF)
    9.
    发明授权
    Creating ion energy distribution functions (IEDF) 有权

    公开(公告)号：US11069504B2

    公开(公告)日：2021-07-20

    申请号：US16867034

    申请日：2020-05-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Rogers

    IPC: H01J37/08 ,  H01J37/32 ,  H01J37/248

    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

    PLASMA EMISSION MONITORING SYSTEM WITH CROSS-DISPERSION GRATING
    10.
    发明申请
    PLASMA EMISSION MONITORING SYSTEM WITH CROSS-DISPERSION GRATING 审中-公开

    公开(公告)号：US20200340858A1

    公开(公告)日：2020-10-29

    申请号：US16828609

    申请日：2020-03-24

    Applicant: Applied Materials, Inc.

    Inventor： Philip Allan Kraus ,  Kelvin Chan ,  Travis Koh ,  Blake Erickson ,  Upendra Ummethala

    IPC: G01J3/18 ,  G02B6/42 ,  G01J3/02

    Abstract: Embodiments disclosed herein include an optical sensor system. In an embodiment, the optical sensor system comprises a processing chamber and a sensor. In an embodiment, the sensor comprises a first diffraction grating oriented in a first direction, a second diffraction grating oriented in a second direction, and a detector for detecting electromagnetic radiation diffracted from the first grating and the second grating. In an embodiment, the optical sensor system further comprises an optical coupling element, where the optical coupling element optically couples an interior of the processing chamber to the sensor.

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