公开(公告)号：US06887522B2

公开(公告)日：2005-05-03

申请号：US10132427

申请日：2002-04-26

申请人： Atsushi Sekiguchi ,  Masami Shibagaki ,  Tomoaki Koide ,  Takafumi Kuninobu ,  Kaoru Suzuki

发明人： Atsushi Sekiguchi ,  Masami Shibagaki ,  Tomoaki Koide ,  Takafumi Kuninobu ,  Kaoru Suzuki

IPC分类号： C25D5/34 ,  C23C16/18 ,  C23C28/02 ,  C25D7/12 ,  H01L21/28 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768 ,  C23C16/06

CPC分类号： H01L21/76873 ,  C23C28/023 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

摘要翻译： 在基板上形成Cu薄膜的方法包括通过CVD工艺在基板的预定表面上形成第一铜膜的Cu-CVD步骤，以及通过电解液在第一铜膜上进一步形成第二铜膜的电镀步骤 使用第一铜膜作为电极的镀铜工艺。 改性步骤通过在Cu-CVD步骤和镀覆步骤之间的活性气氛中曝光来修饰第一铜膜。 从而可以有效地防止在第一铜膜和第二铜膜之间的界面附近形成微细的空隙。

公开(公告)号：US20120070968A1

公开(公告)日：2012-03-22

申请号：US13234594

申请日：2011-09-16

申请人： Masami Shibagaki ,  Masataka Satoh ,  Takahiro Sugimoto ,  Akemi Satoh

发明人： Masami Shibagaki ,  Masataka Satoh ,  Takahiro Sugimoto ,  Akemi Satoh

IPC分类号： H01L21/265 ,  H01L21/26

CPC分类号： H01L21/0445 ,  H01L21/324 ,  H01L21/3247 ,  Y10S438/931

摘要： The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.

摘要翻译： 本发明提供一种处理基板的方法和制造碳化硅（SiC）基板的方法，其中当对结晶碳化硅（SiC）基板进行退火处理时，抑制了表面粗糙度的发生。 根据本发明实施例的基板处理方法包括对单晶碳化硅（SiC）基板（1）进行等离子体照射的步骤和对单晶碳化硅（SiC）进行高温加热处理的步骤， 进行等离子体照射的基板（1）。

公开(公告)号：US20100243618A1

公开(公告)日：2010-09-30

申请号：US12726558

申请日：2010-03-18

申请人： Masami Shibagaki ,  Kaori Mashimo ,  Hiroshi Doi

发明人： Masami Shibagaki ,  Kaori Mashimo ,  Hiroshi Doi

IPC分类号： H01L21/324 ,  H01J37/20

CPC分类号： H01L21/67248 ,  H01L21/046 ,  H01L21/67103

摘要： A temperature control method for a heating apparatus including a chamber which can be evacuated and has a conductive portion, a filament which is positioned in the chamber, a first power supply which supplies a current to the filament, a second power supply which applies, to the filament, a voltage for acceleration to the chamber, an ammeter which measures a current of the filament, and a voltmeter which measures the acceleration voltage, the method comprises a first step of evacuating an interior of the chamber; a second step of supplying the filament current from the first power supply to the filament after the first step; a third step of applying the acceleration voltage to the filament after the second step; and a fourth step of controlling the acceleration voltage to keep a surface temperature of the chamber to be lower than a temperature of the filament after the third step while keeping constant the filament current from the first power supply.

摘要翻译： 一种加热装置的温度控制方法，其特征在于，具备能够抽真空并具有导电部的室，位于所述室内的灯丝，向所述灯丝供给电流的第一电源， 灯丝，用于加速到室的电压，测量灯丝电流的电流表以及测量加速电压的电压表，该方法包括：抽空室的内部的第一步骤; 在第一步骤之后将灯丝电流从第一电源供应到灯丝的第二步骤; 在第二步骤之后将加速电压施加到灯丝​​的第三步骤; 以及第四步骤，在使第一电源的灯丝电流保持恒定的同时，控制加速电压以使室的表面温度保持低于第三步骤之后的灯丝的温度。

公开(公告)号：US20100226630A1

公开(公告)日：2010-09-09

申请号：US12715951

申请日：2010-03-02

申请人： Masami Shibagaki

发明人： Masami Shibagaki

IPC分类号： F27D11/00 ,  A21B1/22 ,  F26B3/30 ,  F25B29/00

CPC分类号： H01L21/67751 ,  F27B17/0025 ,  H01L21/67115

摘要： In a substrate annealing apparatus, a substrate holder unit including a substrate stage made of carbon with a high emissivity or a material coated with carbon is accommodated in a vacuum chamber to be liftable. Also, a heating unit having a heat radiating surface facing the substrate stage is disposed above the substrate holder unit within the vacuum chamber. The substrate annealing apparatus brings the substrate stage close to the heat radiating surface so that a substrate mounted on the substrate stage can be heated by radiant heat from the heat radiating surface while the heat radiating surface is not in contact with the substrate. The substrate holder unit includes a radiating plate and a reflecting plate made of one of a metal carbide, a metal nitride, and a nickel alloy.

摘要翻译： 在基板退火装置中，包括由具有高发射率的碳制成的基板台或涂覆有碳的材料的基板保持器单元容纳在真空室中以可升降。 此外，具有面向基板台的散热面的加热单元设置在真空室内的基板保持器单元的上方。 衬底退火装置使衬底台靠近散热表面，使得安装在衬底台上的衬底可以在散热表面不与衬底接触的同时来自散热表面的辐射热加热。 衬底保持器单元包括散热板和由金属碳化物，金属氮化物和镍合金中的一种制成的反射板。

公开(公告)号：US20100151695A1

公开(公告)日：2010-06-17

申请号：US12636928

申请日：2009-12-14

申请人： Nobuyuki Masaki ,  Yuichi Sasuga ,  Masami Shibagaki ,  Hiroshi Doi

发明人： Nobuyuki Masaki ,  Yuichi Sasuga ,  Masami Shibagaki ,  Hiroshi Doi

IPC分类号： H01L21/477 ,  F27D11/00 ,  F27D11/06 ,  F27D11/02

CPC分类号： F27B17/0025 ,  H01L21/67109 ,  H01L21/67115

摘要： A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage.

摘要翻译： 基板处理装置包括能够被抽真空的室，适于安装基板的基板台，适于设置在基板台的基板安装表面上方的加热单元，面对安装在至少基板安装表面上的基板， 并且通过辐射热加热基板而不与基板接触，适于可缩回地插入在加热单元和安装在基板安装表面上的基板之间的空间中的闸板以及适于延伸/缩回的快门驱动单元 快门进/从空间。 将基板安装在基板台上以面对加热单元，通过从加热单元的辐射热加热基板来对基板进行退火，并且快门延伸到加热单元和基板台之间的空间中。

公开(公告)号：US20100025695A1

公开(公告)日：2010-02-04

申请号：US11813621

申请日：2007-04-20

申请人： Masami Shibagaki ,  Akihiro Egami

发明人： Masami Shibagaki ,  Akihiro Egami

IPC分类号： H01L29/24 ,  H01L21/24

CPC分类号： H01L21/046 ,  H01L21/0465 ,  H01L21/67109 ,  H01L29/66068

摘要： In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.

摘要翻译： 在其中注入杂质的碳化硅（SiC）衬底退火以活化杂质的气氛中，通过将H 2 O的分压设定为不大于10-2Pa，优选不大于10 -3 Pa，表面不规则性 的碳化硅（SiC）衬底被控制为不大于2nm，更优选不大于1nm的RMS值。

公开(公告)号：US20090202231A1

公开(公告)日：2009-08-13

申请号：US12368525

申请日：2009-02-10

申请人： Masami Shibagaki ,  Hiroshi Doi

发明人： Masami Shibagaki ,  Hiroshi Doi

IPC分类号： A21B2/00

CPC分类号： H01L21/67115 ,  H01L21/324 ,  H01L21/67098

摘要： A heating apparatus including a filament arranged in a vacuum heating vessel comprises a base plate arranged in the vacuum heating vessel to fix the filament at a predetermined position with respect to a conductive heater forming one surface of the vacuum heating vessel. The base plate comprises a plate body having a carbon fiber.

摘要翻译： 包括布置在真空加热容器中的细丝的加热装置包括布置在真空加热容器中的基板，用于将丝线相对于形成真空加热容器的一个表面的导电加热器固定在预定位置。 基板包括具有碳纤维的板体。

公开(公告)号：US20080213988A1

公开(公告)日：2008-09-04

申请号：US11951807

申请日：2007-12-06

申请人： Masami Shibagaki ,  Kenji Numajiri ,  Akihiro Egami ,  Akira Kumagai ,  Susumu Akiyama

发明人： Masami Shibagaki ,  Kenji Numajiri ,  Akihiro Egami ,  Akira Kumagai ,  Susumu Akiyama

IPC分类号： H01L21/425 ,  F26B19/00

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L21/67103 ,  H01L21/67109 ,  H01L29/0878 ,  H01L29/66068

摘要： A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

摘要翻译： 具有用于加热放置在能够抽真空的处理室中的基板的加热单元的基板加热装置包括安装在加热单元和基板之间并且其上安装有基板的可变元件和 安装成与夹在其间的基板相对的接收器，并且经由接收器从加热单元接收热量。 形成通气部，其使形成在受热部件和基板之间的空间与处理室中的空间连通。

公开(公告)号：US09431281B2

公开(公告)日：2016-08-30

申请号：US13511092

申请日：2010-12-21

申请人： Masami Shibagaki ,  Kaori Mashimo

发明人： Masami Shibagaki ,  Kaori Mashimo

IPC分类号： F27D19/00 ,  H01L21/425 ,  G05D23/00 ,  H01L21/67

CPC分类号： H01L21/67248

摘要： The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment.A temperature control method for a substrate heat treatment apparatus (1) that includes a heating element includes: increasing the treatment temperature; continuing the temperature increase by reducing the value of power in a stepwise manner after the treatment temperature reaches a preset temperature (T1) before reaching the annealing temperature, the power being applied to heat the heating element; and maintaining the treatment temperature at a fixed value until an annealing treatment is completed after the treatment temperature reaches the annealing temperature (TA).

摘要翻译： 本发明提供了一种用于基板热处理装置的温度控制方法，其在确保其中具有杂质离子的大直径碳化硅（SiC）基板经受活化退火处理的快速加热的稳定性的同时实现高产量。 包括加热元件的基板热处理设备（1）的温度控制方法包括：提高处理温度; 在达到退火温度之前处理温度达到预设温度（T1）后逐步降低功率值继续升温，加热加热元件; 并且在处理温度达到退火温度（TA）后，将处理温度保持在固定值直到退火处理完成。

公开(公告)号：US08691676B2

公开(公告)日：2014-04-08

申请号：US13808338

申请日：2011-08-03

申请人： Masami Shibagaki ,  Kaori Mashimo

发明人： Masami Shibagaki ,  Kaori Mashimo

IPC分类号： H01L21/265 ,  H01L21/425

CPC分类号： H01L22/26 ,  H01L21/046 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a temperature control method capable of equivalently maintaining qualities of substrates even when treated substrates are continuously carried in a treatment container in the case in which activation annealing treatment is performed by an electron impact heating method. The temperature control method of a substrate heat treating apparatus performing annealing treatment of a substrate by an electron impact heating method includes performing preheating for heating the inside of a treating chamber 2a at a higher temperature than the annealing treatment temperature of a substrate 21 and over a longer period of time than the annealing treatment time and then, cools the inside of the treatment container to a temperature lower than the annealing treatment temperature, prior to carrying the substrate 21 in a vacuum exhaustible container 3 and carrying the substrate 21 in the preheated vacuum exhaustible treatment container 3 and then, increasing a temperature of the treatment container to the annealing treatment temperature to perform the annealing treatment.

摘要翻译： 即使在通过电子冲击加热方法进行活化退火处理的情况下，即使处理过的基板连续地载置在处理容器中也能够等效地保持基板的质量。 通过电子冲击加热法对基板进行退火处理的基板热处理装置的温度控制方法包括：在比基板21的退火处理温度高的温度下进行加热处理室2a的内部的预热， 比退火处理时间长的时间段，然后将处理容器的内部冷却至低于退火处理温度的温度，然后将基板21运送到真空可消耗容器3中，并将基板21运送在预热的真空中 然后将处理容器的温度提高到退火处理温度，进行退火处理。