公开(公告)号：US08482357B2

公开(公告)日：2013-07-09

申请号：US13310687

申请日：2011-12-02

申请人： Bin Xiao ,  Ping Lv ,  Wei Hu ,  Jia-Xin Mei ,  Gang Li

发明人： Bin Xiao ,  Ping Lv ,  Wei Hu ,  Jia-Xin Mei ,  Gang Li

IPC分类号： H03B5/18

CPC分类号： H03H9/2436 ,  H03H3/0072 ,  Y10T29/49016

摘要： A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.

摘要翻译： 横波声谐振器包括基座，谐振器部件，固定到基座的多个驱动电极以及连接基座和谐振器部件的多个固定部分。 谐振器部件悬挂在基座的顶表面上方并且垂直于基座。 驱动电极耦合到谐振器部件的侧表面。 谐振器部件形成为基本正多边形的形状。 驱动电极和谐振器部件共同形成用于将电容转换成静电力的机电耦合系统。 此外，还公开了包括横向声波谐振器的电容式横向延伸声波硅振荡器和制造横向声波谐振器的方法。

公开(公告)号：US20130093527A1

公开(公告)日：2013-04-18

申请号：US13310687

申请日：2011-12-02

申请人： BIN XIAO ,  Ping Lv ,  Wei Hu ,  Jia-Xin Mei ,  Gang Li

发明人： BIN XIAO ,  Ping Lv ,  Wei Hu ,  Jia-Xin Mei ,  Gang Li

IPC分类号： H03B5/30 ,  H01P11/00 ,  H01P7/06

CPC分类号： H03H9/2436 ,  H03H3/0072 ,  Y10T29/49016

摘要： A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.

摘要翻译： 横波声谐振器包括基座，谐振器部件，固定到基座的多个驱动电极以及连接基座和谐振器部件的多个固定部分。 谐振器部件悬挂在基座的顶表面上方并且垂直于基座。 驱动电极耦合到谐振器部件的侧表面。 谐振器部件形成为基本正多边形的形状。 驱动电极和谐振器部件共同形成用于将电容转换成静电力的机电耦合系统。 此外，还公开了包括横向声波谐振器的电容式横向延伸声波硅振荡器和制造横向声波谐振器的方法。

公开(公告)号：US09221675B2

公开(公告)日：2015-12-29

申请号：US13561194

申请日：2012-07-30

申请人： Wei Hu ,  Gang Li ,  Jia-Xin Mei

发明人： Wei Hu ,  Gang Li ,  Jia-Xin Mei

IPC分类号： B81C1/00 ,  H04R31/00 ,  H04R19/00

CPC分类号： B81C1/00158 ,  B81C1/00246 ,  H04R19/005 ,  H04R31/00

摘要： A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.

摘要翻译： 一种用于集成IC和MEMS部件的方法包括以下步骤：S1）提供具有第一区域（21）和第二区域（22）的SOI基底（20）; S2）通过标准半导体工艺在第一区域上制造IC，同时形成延伸到第二区域的金属导电层（26）和介质绝缘层（25c）; S3）部分地去除介质绝缘层，然后进一步部分去除硅组分层以形成背板图; S4）在SOI基底上方沉积牺牲层（32）; S5）在牺牲层上形成Poly Sil-xGex膜（33）; S6）形成后腔（34）; 和S7）侵蚀牺牲层以形成与后腔连通的腔室（36）。 此外，还公开了通过上述方法制造的芯片（10）。

公开(公告)号：US20130202136A1

公开(公告)日：2013-08-08

申请号：US13561194

申请日：2012-07-30

申请人： Wei Hu ,  Gang Li ,  Jia-Xin Mei

发明人： Wei Hu ,  Gang Li ,  Jia-Xin Mei

IPC分类号： H04R1/00 ,  H01L21/02

CPC分类号： B81C1/00158 ,  B81C1/00246 ,  H04R19/005 ,  H04R31/00

摘要： A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.

摘要翻译： 一种用于集成IC和MEMS部件的方法包括以下步骤：S1）提供具有第一区域（21）和第二区域（22）的SOI基底（20）; S2）通过标准半导体工艺在第一区域上制造IC，同时形成延伸到第二区域的金属导电层（26）和介质绝缘层（25c）; S3）部分地去除介质绝缘层，然后进一步部分去除硅组分层以形成背板图; S4）在SOI基底上方沉积牺牲层（32）; S5）在牺牲层上形成Poly Sil-xGex膜（33）; S6）形成后腔（34）; 和S7）侵蚀牺牲层以形成与后腔连通的腔室（36）。 此外，还公开了通过上述方法制造的芯片（10）。

公开(公告)号：US20110007914A1

公开(公告)日：2011-01-13

申请号：US12571389

申请日：2009-09-30

申请人： Gang Li ,  Wei Hu ,  Jia Xin Mei

发明人： Gang Li ,  Wei Hu ,  Jia Xin Mei

IPC分类号： H04R1/00

CPC分类号： H04R1/04 ,  H04R1/06 ,  H04R19/02

摘要： An electrostatic loudspeaker includes a backplate having a metal film acting as one electrode of a capacitor and defining a number of sound apertures therein; a diaphragm insulatively spaced a distance from the backplate to form the capacitor; the diaphragm comprising a metal film acting as the other electrode of the capacitor; a back chamber having a substrate and an insulative spacer for joining edge portions of the diaphragm and the substrate; a driving circuit element for converting electrical signals from exterior input pads into driving signals to drive the diaphragm to vibrate and sound; the driving circuit element being mounted on an inner surface of the substrate and being accommodated in the back chamber; and a first, second and third connection paths for respectively electrically connecting the driving circuit element with the two electrodes of the capacitor, and the exterior input pads. An electrostatic loudspeaker with two backplates is also disclosed.

摘要翻译： 静电扬声器包括具有作为电容器的一个电极并在其中限定多个声孔的金属膜的背板; 隔膜与背板隔开间隔一定距离以形成电容器; 所述隔膜包括用作所述电容器的另一电极的金属膜; 具有基板的后室和用于连接隔膜和基板的边缘部分的绝缘间隔件; 驱动电路元件，用于将来自外部输入焊盘的电信号转换成驱动信号以驱动振膜振动和发出声音; 所述驱动电路元件安装在所述基板的内表面上并被容纳在所述后室中; 以及用于将驱动电路元件与电容器的两个电极和外部输入焊盘分别电连接的第一，第二和第三连接路径。 还公开了具有两个背板的静电扬声器。

公开(公告)号：US20100258950A1

公开(公告)日：2010-10-14

申请号：US12544415

申请日：2009-08-20

申请人： GANG LI ,  Wei Hu ,  Jia-Xin Mei

发明人： GANG LI ,  Wei Hu ,  Jia-Xin Mei

IPC分类号： H01L23/52 ,  H01L21/50

CPC分类号： H01L23/10 ,  B81C1/00269 ,  B81C2203/019 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/838 ,  H01L2224/83801 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2224/29099

摘要： A multichip package includes a first chip and a second chip coupled with the first chip. The first chip includes a first base with a semiconductor device mounted on one side of the first base, a first electrical connection unit, a first bonding ring surrounding the semiconductor device, a first insulating layer formed on the other side of the first base and a first external bonding portion formed on the first insulating layer. The first external bonding portion is electrically connected to the first electrical connection unit. The second chip includes an integrated circuit corresponding to the semiconductor device, a second electrical connection unit fusing with the first electrical connection unit, and a second bonding ring fusing with the first bonding ring in order to form a hermetic cavity surrounding the semiconductor device, the integrated circuit, the first electrical connection unit and the second electrical connection unit.

摘要翻译： 多芯片封装包括第一芯片和与第一芯片耦合的第二芯片。 第一芯片包括：第一基座，其具有安装在第一基座的一侧上的半导体器件;第一电连接单元;围绕半导体器件的第一接合环;形成在第一基座的另一侧上的第一绝缘层;以及 第一外部接合部分形成在第一绝缘层上。 第一外部接合部分电连接到第一电连接单元。 第二芯片包括对应于半导体器件的集成电路，与第一电连接单元融合的第二电连接单元和与第一结合环熔合以形成围绕半导体器件的密封腔的第二接合环， 集成电路，第一电连接单元和第二电连接单元。

公开(公告)号：US08103028B2

公开(公告)日：2012-01-24

申请号：US12571389

申请日：2009-09-30

申请人： Gang Li ,  Wei Hu ,  Jia Xin Mei

发明人： Gang Li ,  Wei Hu ,  Jia Xin Mei

IPC分类号： H04R1/02 ,  H04R25/00

CPC分类号： H04R1/04 ,  H04R1/06 ,  H04R19/02

摘要： An electrostatic loudspeaker includes a backplate having a metal film acting as one electrode of a capacitor and defining a number of sound apertures therein; a diaphragm insulatively spaced a distance from the backplate to form the capacitor; the diaphragm comprising a metal film acting as the other electrode of the capacitor; a back chamber having a substrate and an insulative spacer for joining edge portions of the diaphragm and the substrate; a driving circuit element for converting electrical signals from exterior input pads into driving signals to drive the diaphragm to vibrate and sound; the driving circuit element being mounted on an inner surface of the substrate and being accommodated in the back chamber; and a first, second and third connection paths for respectively electrically connecting the driving circuit element with the two electrodes of the capacitor, and the exterior input pads. An electrostatic loudspeaker with two backplates is also disclosed.

摘要翻译： 静电扬声器包括具有作为电容器的一个电极并在其中限定多个声孔的金属膜的背板; 隔膜与背板隔开间隔一定距离以形成电容器; 所述隔膜包括用作所述电容器的另一电极的金属膜; 具有基板的后室和用于连接隔膜和基板的边缘部分的绝缘间隔件; 驱动电路元件，用于将来自外部输入焊盘的电信号转换成驱动信号以驱动振膜振动和发出声音; 所述驱动电路元件安装在所述基板的内表面上并被容纳在所述后室中; 以及用于将驱动电路元件与电容器的两个电极和外部输入焊盘分别电连接的第一，第二和第三连接路径。 还公开了具有两个背板的静电扬声器。

公开(公告)号：US07998776B1

公开(公告)日：2011-08-16

申请号：US12910801

申请日：2010-10-23

申请人： Gang Li ,  Wei Hu

发明人： Gang Li ,  Wei Hu

IPC分类号： H01L21/00

CPC分类号： G01L9/0042 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0376 ,  B81C1/00182 ,  B81C2201/0132 ,  B81C2201/0177 ,  G01L9/0045 ,  G01P15/123 ,  G01P2015/0828

摘要： A method for manufacturing a MEMS sensor and a thin film thereof includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an isotropic DRIE process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.

摘要翻译： MEMS传感器及其薄膜的制造方法包括以下步骤：结合沉积工艺，各向同性DRIE工艺，湿蚀刻工艺和背蚀刻工艺来蚀刻单晶硅晶片的顶表面，以便 形成压敏单晶硅膜，悬臂梁，质量块，前室，后室和连接前室和后室的沟槽。 防止单晶硅膜蚀刻，从而可以良好地控制其厚度。 本发明的方法可以用于代替从硅晶片的底表面形成后室和压敏单晶硅膜的传统方法。

公开(公告)号：US07972888B1

公开(公告)日：2011-07-05

申请号：US12813503

申请日：2010-06-10

申请人： Gang Li ,  Wei Hu

发明人： Gang Li ,  Wei Hu

IPC分类号： H01L21/00

CPC分类号： G01L9/0042 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/0376 ,  B81C1/00182 ,  B81C2201/0132 ,  B81C2201/0177 ,  B81C2203/0118 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

摘要： A method for manufacturing a MEMS sensor and its thin film and cantilever beam includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an outer epitaxial growth process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.

摘要翻译： MEMS传感器及其薄膜和悬臂梁的制造方法包括以下步骤：将沉积工艺，外部外延生长工艺，湿蚀刻工艺和背蚀刻工艺结合在一起蚀刻单晶硅晶片的顶表面 以形成压敏单晶硅膜，悬臂梁，质量块，前室，后室和连接前室和后室的沟槽。 防止单晶硅膜蚀刻，从而可以良好地控制其厚度。 本发明的方法可以用于代替从硅晶片的底表面形成后室和压敏单晶硅膜的传统方法。

公开(公告)号：USD1047541S1

公开(公告)日：2024-10-22

申请号：US29937297

申请日：2024-04-14

申请人： Wei Hu

设计人： Wei Hu

摘要： FIG. 1 is a front, top, and left perspective view of a 8-shelf shoe organizer showing my new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof; and,
FIG. 8 is a rear, bottom, and right perspective view thereof.