公开(公告)号：US20210399147A1

公开(公告)日：2021-12-23

申请号：US17356185

申请日：2021-06-23

申请人： Arizona Board of Regents on behalf of Arizona State University ,  The Board of Trustees of the University of Arkansas

发明人： Yong-Hang Zhang ,  Shui-Qing Yu

IPC分类号： H01L31/028 ,  H01L31/105 ,  H01L31/18

摘要： High-performance long-lifetime charge-separation photodetectors are provided. A new device design is described based on novel band structure engineering of semiconductor materials for photodetectors, such as photosensors, solar cells, and thermophotovoltaic devices. In an exemplary aspect, photodetectors described herein include a charge-separated photo absorber region. This comprises a semiconductor with a band structure that has an indirect fundamental bandgap, with a direct bandgap (┌-┌ transition) only slightly above the indirect fundamental bandgap (L- or X-┌ transitions) (e.g., approximately equal to or larger than an energy of a product of the Boltzmann constant (kB), and temperature (T), with kBT=26 millielectron-volts (meV) at room temperature). This design not only improves photogenerated-carrier lifetime (similar to indirect bandgap semiconductors), but also maintains a strong absorption coefficient (similar to direct bandgap semiconductors).

公开(公告)号：US20220130887A1

公开(公告)日：2022-04-28

申请号：US17509635

申请日：2021-10-25

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Shui-Qing Yu ,  Gregory J. Salamo ,  Rahul Kumar ,  Samir K. Saha ,  Yang Zhang ,  Samir M. El-Ghazaly

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/0304 ,  H04N5/32

摘要： An integrated microwave photonics (IMWP) apparatus is provided using sapphire as a platform. The IMWP apparatus includes: a sapphire substrate having a step-terrace surface; and a III-V stack layer epitaxially grown on the sapphire substrate. The III-V stack layer includes: a first III-V layer disposed on the sapphire substrate; a low temperature (LT) III-V buffer layer disposed on the first III-V layer; multiple second III-V layers disposed and stacked on the LT III-V buffer layer; a third III-V layer disposed on the second III-V layers; a III-V quantum well layer disposed on the third III-V layers; and a fourth III-V layer disposed on the III-V quantum well layer. The second III-V layers are respectively annealed. A growth temperature of the LT III-V layer and a growth temperature of the III-V quantum well layer are lower than a growth temperature of each of the first, second, third and fourth III-V layers.

公开(公告)号：US20200350409A1

公开(公告)日：2020-11-05

申请号：US16931246

申请日：2020-07-16

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Shui-Qing Yu ,  Hugh Churchill ,  Gregory J. Salamo

IPC分类号： H01L29/18 ,  C30B29/02 ,  C30B23/02 ,  H01L21/02 ,  H01L31/0272 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/66 ,  C30B29/60 ,  H01L31/108

摘要： A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

公开(公告)号：US20230290707A1

公开(公告)日：2023-09-14

申请号：US18155612

申请日：2023-01-17

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Amirreza Ghadimi Avval ,  Samir El-Ghazaly ,  Gregory J. Salamo ,  Shui-Qing Yu

IPC分类号： H01L23/433

CPC分类号： H01L23/433 ,  H01L29/2003

摘要： A semiconductor heat sink made of a first material including a plurality of spaced-apart depressions and an area surrounding the depressions filled with one or more materials having a heat conductivity greater than the first material.

公开(公告)号：US11757257B2

公开(公告)日：2023-09-12

申请号：US17487140

申请日：2021-09-28

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Shui-Qing Yu ,  Yiyin Zhou ,  Wei Du

IPC分类号： H01S5/00 ,  H01S5/32 ,  H01S5/34 ,  H01S5/02 ,  H01S5/042 ,  H01S5/30

CPC分类号： H01S5/322 ,  H01S5/021 ,  H01S5/3223 ,  H01S5/3427 ,  H01S5/04256 ,  H01S5/3054 ,  H01S5/3077 ,  H01S5/32 ,  H01S5/3407 ,  H01S5/3426

摘要： A laser diode including a double heterostructure comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer. The top layer and the buffer layer have opposite types of conductivity. The active layer has a bandgap smaller than that of the buffer layer or the top layer. The double heterostructure includes Ge, SiGe, GeSn, and/or SiGeSn materials.

公开(公告)号：US20220102942A1

公开(公告)日：2022-03-31

申请号：US17487140

申请日：2021-09-28

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Shui-Qing Yu ,  Yiyin Zhou ,  Wei Du

IPC分类号： H01S5/34 ,  H01S5/042 ,  H01S5/30

摘要： A laser diode including a double heterostructure comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer. The top layer and the buffer layer have opposite types of conductivity. The active layer has a bandgap smaller than that of the buffer layer or the top layer. The double heterostructure includes Ge, SiGe, GeSn, and/or SiGeSn materials.

公开(公告)号：US20180254325A1

公开(公告)日：2018-09-06

申请号：US15910789

申请日：2018-03-02

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

发明人： Shui-Qing Yu ,  Hugh Churchill ,  Gregory J. Salamo

IPC分类号： H01L29/18 ,  C30B29/02 ,  C30B23/02 ,  H01L21/02

CPC分类号： H01L29/18 ,  B82Y10/00 ,  C30B23/02 ,  C30B29/02 ,  C30B29/60 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02631 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/66469 ,  H01L29/66977 ,  H01L29/66984 ,  H01L29/78681 ,  H01L31/0272 ,  H01L31/108 ,  H01L33/005 ,  H01L33/26 ,  H01L39/12

摘要： A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.