摘要:
A web-browser plug-in is described herein that detects the type of content a user selects on a web page and allows the user to retrieve additional information about selected web content or initiate a communication application. The plug-in analyzes the user's selection to determine what type of web content was selected. A smart menu is created and presented to the user with options relating to the type of web content selected. The user can then either download additional information about the web content or initiate a communication application without having to navigate to another web page or request information from a web service. Without having to navigate to a second web page, the user can select an option and either view the additional web information or initiate the communication application.
摘要:
Methods and systems are provided for searching time series information in a distributed data processing system. A method of processing a semantic search query comprises receiving a structured search query, processing the structured search query to deconstruct into query elements, identifying a set of connected elements based on the query elements, processing a time series data structure of the identified set of connected elements to determine a command data element, utilizing the command data element to process the time series data structure of the identified set of connected elements, annotating the time series data structure of each of the identified set of connected elements to form a queried data set, and providing the queried data set.
摘要:
A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.
摘要:
A method for manufacturing a memory device includes forming an oxide layer adjacent a substrate. A floating gate layer is formed and disposed outwardly from the oxide layer. A dielectric layer is formed, such that it is disposed outwardly from the floating gate layer. Then, a conductive material layer is formed and disposed outwardly from the dielectric layer, wherein the conductive material layer forms a control gate that is substantially isolated from the floating gate layer by the dielectric layer.
摘要:
Characteristics of partially assembled photovoltaic modules can be determined using electrical connection apparatuses and methods. By providing deformable electrical contacts against a partially assembled module on an assembly line, an electrical bias can be applied to the module before the module is completely assembled. An electrical connection apparatus for a photovoltaic module may include a first contact configured to engage a first lead on the photovoltaic module, a second contact configured to engage a second lead on the photovoltaic module, and an electrical power source configured to apply an electrical bias between the first contact and the second contact.
摘要:
Embodiments contemplate one or more techniques for packet filtering. One or more embodiments may apply specific routing and/or forwarding rules on some or each packet when a device has one or more, or multiple, interfaces. Contemplated filtering techniques may be implemented in a module and/or without modifying an IP stack. The contemplated packet filtering techniques may apply to a terminal in uplink and/or downlink as well as to any network node. An incoming packet table may be created using 5-tuple, 6-tuple, and/or tags, among other mechanisms, to support incoming and/or outgoing packet filtering.
摘要:
A zero temperature coefficient (ZTC) capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3. An integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3. A process of forming an integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3.
摘要:
Making gates having multiple thicknesses on the same substrate in a given process flow is provided. For example, a method of making a semiconductor structure having at least two gates of different thickness involves forming a first gate layer having a first thickness; patterning a first hard mask over a portion of the first gate layer to define a first gate underneath the first hard mask having a first gate thickness; forming a second gate layer having a second thickness over the first gate layer and the first hard mask; patterning a second hard mask over a portion of the second gate layer to define a second gate underneath the second hard mask having a second gate thickness; removing portions of the first gate layer and the second gate layer that are not under the first hard mask and the second hard mask; and removing the first hard mask and the second hard mask to provide two gates of different thicknesses.