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公开(公告)号：US20100060562A1
公开(公告)日：2010-03-11
申请号：US12524021
申请日：2008-04-21
CPC分类号： H01L31/153 , G01J1/4228 , G01J1/44 , G01J1/46 , G01J2001/444 , G01J2001/446 , G02F1/13318 , G02F2001/133626 , H01L31/02164 , H01L31/03682 , H01L31/105
摘要： A method is provided of compensating for stray light in a light sensor having a detection photosensor (7) and a reference photosensor (20), the reference photosensor (7) being for use in compensating for stray light falling on the detection photosensor (20). The method comprises using the reference photosensor (20) at least in part to determine a bias voltage applied to the detection photosensor (7). Based on this method, a display device is provided comprising a backlight and a light sensor for determining an ambient light level with the effects of stray light from the backlight substantially removed, with means provided for controlling the intensity of the backlight in dependence upon the determined ambient light level.
摘要翻译： 提供一种补偿具有检测光传感器（7）和参考光电传感器（20）的光传感器中的杂散光的方法，所述参考光传感器（7）用于补偿落在检测光传感器（20）上的杂散光， 。 该方法包括至少部分地使用参考光传感器（20）来确定施加到检测光传感器（7）的偏置电压。 基于该方法，提供了一种显示装置，其包括背光和光传感器，用于利用来自背光的杂散光的效果基本上被去除来确定环境光级，具有根据所确定的背景来控制背光的强度的装置 环境光级别。
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公开(公告)号：US08976099B2
公开(公告)日：2015-03-10
申请号：US13151445
申请日：2011-06-02
CPC分类号： G09G3/3648 , G09G3/3659 , G09G2300/0465 , G09G2300/0814 , G09G2300/0833
摘要： A charge storage circuit for a pixel comprises a charge storage node. First and second series-connected transistors (8,10) are provided for selectively isolating the charge storage node from a first voltage input (9,SL) for supplying a data voltage. The circuit is provided with a voltage follower circuit for replicating a voltage at the charge storage node (12) at another node in the circuit thereby to reduce the drain-source voltage across the second transistor (10). The first transistor forms part of the voltage follower circuit.
摘要翻译： 用于像素的电荷存储电路包括电荷存储节点。 第一和第二串联晶体管（8,10）被提供用于选择性地将电荷存储节点与用于提供数据电压的第一电压输入（9，SL）隔离。 电路设置有电压跟随器电路，用于在电路中的另一节点处在电荷存储节点（12）处复制电压，从而减小跨越第二晶体管（10）的漏 - 源电压。 第一晶体管构成电压跟随器电路的一部分。
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3.发明申请ARRAY ELEMENT FOR TEMPERATURE SENSOR ARRAY CIRCUIT, TEMPERATURE SENSOR ARRAY CIRCUIT UTILIZING SUCH ARRAY ELEMENT, AND AM-EWOD DEVICE INCLUDING SUCH A TEMPERATURE SENSOR ARRAY CIRCUIT 有权温度传感器阵列电路的阵列元件，采用这种阵列元件的温度传感器阵列电路，以及包括这种温度传感器阵列电路的AM-EWOD器件公开(公告)号：US20110268151A1
公开(公告)日：2011-11-03
申请号：US12772245
申请日：2010-05-03
申请人： Benjamin James Hadwen , Jason Roderick Hector , Adrian Marc Simon Jacobs , Michael Paul Coulson
发明人： Benjamin James Hadwen , Jason Roderick Hector , Adrian Marc Simon Jacobs , Michael Paul Coulson
CPC分类号： G01K7/01 , B01L3/502792 , B01L2200/0673 , B01L2300/0645 , B01L2300/0816 , B01L2300/0887 , B01L2300/089 , B01L2400/0427 , G01K1/026 , G01K2217/00
摘要： An array element for a temperature sensor array circuit. The array element includes a switch transistor; and a temperature sensor element having an impedance which varies as a function of temperature, the temperature sensor element being connected in parallel with a source and drain of the switch transistor
摘要翻译： 用于温度传感器阵列电路的阵列元件。 阵列元件包括开关晶体管; 以及温度传感器元件，其具有作为温度的函数而变化的阻抗，所述温度传感器元件与所述开关晶体管的源极和漏极并联连接
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公开(公告)号：US20110006311A1
公开(公告)日：2011-01-13
申请号：US12934126
申请日：2009-04-15
IPC分类号： H01L27/146 , H01L31/12
CPC分类号： G02F1/13318 , G02F1/13454 , G02F2201/58 , G09G3/36 , G09G2360/144
摘要： A photosensitive structure comprises a plurality of photosenstivie regions (124) which are electrically in series. A light shading layer comprises a plurality of electrically conductive regions (501) disposed so as to shade the photosensitive regions (124) from light incident on a major surface of the structure. The conductive regions (501) are electrically isolated from each other.
摘要翻译： 光敏结构包括电串联的多个照明区域（124）。 遮光层包括多个导电区域（501），所述多个导电区域（501）设置成使得光敏区域（124）不会从入射到该结构的主表面上的光线遮蔽。 导电区域（501）彼此电隔离。
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5.发明授权Array element for temperature sensor array circuit, temperature sensor array circuit utilizing such array element, and AM-EWOD device including such a temperature sensor array circuit 有权用于温度传感器阵列电路的阵列元件，利用这种阵列元件的温度传感器阵列电路和包括这种温度传感器阵列电路的AM-EWOD装置公开(公告)号：US08419273B2
公开(公告)日：2013-04-16
申请号：US12772245
申请日：2010-05-03
申请人： Benjamin James Hadwen , Jason Roderick Hector , Adrian Marc Simon Jacobs , Michael Paul Coulson
发明人： Benjamin James Hadwen , Jason Roderick Hector , Adrian Marc Simon Jacobs , Michael Paul Coulson
CPC分类号： G01K7/01 , B01L3/502792 , B01L2200/0673 , B01L2300/0645 , B01L2300/0816 , B01L2300/0887 , B01L2300/089 , B01L2400/0427 , G01K1/026 , G01K2217/00
摘要： An array element for a temperature sensor array circuit. The array element includes a switch transistor; and a temperature sensor element having an impedance which varies as a function of temperature, the temperature sensor element being connected in parallel with a source and drain of the switch transistor.
摘要翻译： 一种用于温度传感器阵列电路的阵列元件。 阵列元件包括开关晶体管; 以及具有根据温度变化的阻抗的温度传感器元件，所述温度传感器元件与所述开关晶体管的源极和漏极并联连接。
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公开(公告)号：US20100026192A1
公开(公告)日：2010-02-04
申请号：US12444032
申请日：2007-10-04
CPC分类号： G01J1/44 , G01J1/1626 , G01J1/4204 , G09G3/3406 , G09G2360/144 , H01L31/105 , H01L31/111
摘要： A method of operating a photosensor comprising: applying a bias voltage to a photosensor (12) comprising n (n>1) photo-sensitive elements (8) connected in series, and determining the photocurrent in the photosensor (12) at a time when the applied bias voltage across the photosensor maintains the photosensor at or close to the point at which it has the greatest signal-to-noise ratio. This may conveniently be done by determining the current in the photosensor at a time when the applied bias voltage across the photosensor is equal or approximately equal to n×Vbi, where Vbi is the bias voltage about which the current in a single one of the photo-sensitive elements (8), in the dark, changes sign. In an embodiment in which the photo-sensitive elements (8) are photodiodes, the bias voltage Vbi is the “built-in” voltage of the photodiodes. The photocurrent generated when n series-connected photodiodes are illuminated is approximately equal to the photocurrent generated when one photodiode is illuminated. However, the leakage current (i.e., the dark current) for the n series-connected photodiodes is significantly lower than the leakage current for one photodiode. The signal-to-noise-ratio is therefore significantly increased.
摘要翻译： 一种操作光传感器的方法，包括：将偏置电压施加到包括串联连接的n（n> 1）个光敏元件（8）的光电传感器（12），并且在光电传感器（12）中确定光电流 光电传感器两端施加的偏置电压将光电传感器保持在或接近于具有最大信噪比的点。 这可以通过确定光电传感器中的电流在光电传感器两端施加的偏置电压等于或近似等于nxVbi的时间来确定光电传感器的电流，其中Vbi是单个光敏电流中的电流的偏置电压 元素（8），在黑暗中改变迹象。 在光敏元件（8）是光电二极管的实施例中，偏置电压Vbi是光电二极管的“内置”电压。 当n个串联连接的光电二极管被照亮时产生的光电流近似等于当一个光电二极管被照亮时产生的光电流。 然而，n个串联连接的光电二极管的漏电流（即暗电流）明显低于一个光电二极管的漏电流。 因此，信噪比显着增加。
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公开(公告)号：US08138463B2
公开(公告)日：2012-03-20
申请号：US12444032
申请日：2007-10-04
CPC分类号： G01J1/44 , G01J1/1626 , G01J1/4204 , G09G3/3406 , G09G2360/144 , H01L31/105 , H01L31/111
摘要： A method of operating a photosensor comprising: applying a bias voltage to a photosensor (12) comprising n (n>1) photo-sensitive elements (8) connected in series, and determining the photocurrent in the photosensor (12) at a time when the applied bias voltage across the photosensor maintains the photosensor at or close to the point at which it has the greatest signal-to-noise ratio. This may conveniently be done by determining the current in the photosensor at a time when the applied bias voltage across the photosensor is equal or approximately equal to n×Vbi, where Vbi is the bias voltage about which the current in a single one of the photo-sensitive elements (8), in the dark, changes sign. In an embodiment in which the photo-sensitive elements (8) are photodiodes, the bias voltage Vbi is the “built-in” voltage of the photodiodes. The photocurrent generated when n series-connected photodiodes are illuminated is approximately equal to the photocurrent generated when one photodiode is illuminated. However, the leakage current (i.e., the dark current) for the n series-connected photodiodes is significantly lower than the leakage current for one photodiode. The signal-to-noise-ratio is therefore significantly increased.
摘要翻译： 一种操作光传感器的方法，包括：将偏置电压施加到包括串联连接的n（n> 1）个光敏元件（8）的光电传感器（12），并且在光电传感器（12）中确定光电流 光电传感器两端施加的偏置电压将光电传感器保持在或接近于具有最大信噪比的点。 这可以通过确定光电传感器中的电流在光电传感器上施加的偏置电压等于或近似等于n×Vbi的时间来确定光电传感器的电流，其中Vbi是单个照片中的电流的偏置电压 敏感元素（8），在黑暗中改变迹象。 在光敏元件（8）是光电二极管的实施例中，偏置电压Vbi是光电二极管的“内置”电压。 当n个串联连接的光电二极管被照亮时产生的光电流近似等于当一个光电二极管被照亮时产生的光电流。 然而，n个串联连接的光电二极管的漏电流（即暗电流）明显低于一个光电二极管的漏电流。 因此，信噪比显着增加。
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公开(公告)号：US20100308345A1
公开(公告)日：2010-12-09
申请号：US12525911
申请日：2008-02-06
IPC分类号： H01L27/144 , H01L31/105 , H01L31/12
CPC分类号： H01L27/1446 , G02F1/13318 , G02F1/133555 , G02F1/13454 , G02F1/136209 , G09G3/3406 , G09G3/3648 , G09G2360/144 , H01L31/153
摘要： A light sensing system comprises a first light sensor (21′), a second light sensor (21) and a first light shielding material (24) disposed over the first light sensor (21′) but not over the second light sensor (21) so as to block ambient light from being incident on the first light sensor (21). A first electrically conductive material (23a) is disposed between the first light shielding layer (24) and the first light sensor and a second electrically conductive material (23b) is disposed over the second light sensor. The second electrically conductive material (23b) is at least partially light-transmissive. Providing the first electrically conductive material (23a) between the first light shielding layer (24) and the first light sensor eliminates any parasitic capacitance that would otherwise be set up by the light shielding layer (24) (which is typically a metallic layer). Providing the second electrically conductive material (23b) over the second light sensor ensures that the two light sensors are as closely electrically matched to one another as possible. Thus, a difference between the output of the first light sensor and the output of the second light sensor may reliably be taken as an indication of the level of ambient light. The first electrically conductive material (23a) and the second electrically conductive material (23b) may be provided by disposing a layer of electrically conductive material, which is at least partially light-transmissive, so as to cover both light sensors.
摘要翻译： 光感测系统包括第一光传感器（21'），第二光传感器（21）和设置在第一光传感器（21'）之上但不在第二光传感器（21）上的第一遮光材料（24） 以阻止环境光入射到第一光传感器（21）上。 第一导电材料（23a）设置在第一遮光层（24）和第一光传感器之间，第二导电材料（23b）设置在第二光传感器上。 第二导电材料（23b）至少部分是透光的。 在第一遮光层（24）和第一光传感器之间提供第一导电材料（23a）消除了否则由遮光层（通常为金属层）设置的寄生电容。 在第二光传感器上提供第二导电材料（23b）确保两个光传感器尽可能彼此紧密地电气匹配。 因此，可以可靠地将第一光传感器的输出与第二光传感器的输出之间的差作为环境光的水平的指示。 可以通过设置至少部分透光的导电材料层来覆盖两个光传感器来提供第一导电材料（23a）和第二导电材料（23b）。
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公开(公告)号：US08368676B2
公开(公告)日：2013-02-05
申请号：US12526887
申请日：2008-05-19
IPC分类号： G06F3/038
CPC分类号： H01L31/02164 , G01J1/4204 , G01J2001/0276 , G02F1/136209 , H01L27/12 , H01L29/78633 , H01L31/02019 , H01L31/035281 , H01L31/112
摘要： A light shield (204) for blocking light traveling toward a PIN photodiode (413) from a glass substrate (314) side is formed of a conductive material, and a reference electric potential (Vr−nVoc) equal to that of a cathode of the PIN photodiode (413) is applied to the light shield (204) from a power supply circuit (266). Thus, inductive noise for a photoelectric conversion device used for an ambient light sensor is further reduced in a display device.
摘要翻译： 用于阻挡从玻璃基板（314）侧朝向PIN光电二极管（413）移动的光的遮光罩（204）由导电材料形成，并且基准电位（Vr-nVoc）等于 PIN光电二极管（413）从电源电路（266）施加到遮光罩（204）。 因此，在显示装置中，用于环境光传感器的光电转换装置的感应噪声进一步降低。
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公开(公告)号：US08164719B2
公开(公告)日：2012-04-24
申请号：US12445153
申请日：2007-06-21
IPC分类号： G02F1/1333 , G02F1/133
CPC分类号： G02F1/136209 , G02F2001/13312 , G02F2202/10 , H01L31/02164
摘要： The present invention provides a liquid crystal display device capable of preventing the occurrence of dark currents in photodiodes. Thus, the liquid crystal display device includes a liquid crystal display panel 1 including an active matrix substrate and a backlight 13 for illuminating the liquid crystal display panel. The active matrix substrate 1 includes a photodiode 7 formed by a silicon film and a light shielding film 8 for shielding the photodiode 7 against illumination light from the backlight 13. The photodiode 7 and the light shielding film 8 are provided on a base substrate 5. The light shielding film 8 is formed by a semiconductor or an insulator. Preferably, the photodiode 7 is made of, for example, polycrystalline silicon or continuous grain silicon so as to have a characteristic that its sensitivity increases as the wavelength of light entering the photodiode becomes shorter. The light-shielding film 8 is formed by a silicon film, for example amorphous silicon, that reduces the transmittance of light entering the light shielding film as the wavelength of the light becomes shorter.
摘要翻译： 本发明提供能够防止光电二极管中的暗电流发生的液晶显示装置。 因此，液晶显示装置包括：液晶显示面板1，其包括有源矩阵基板和用于照亮液晶显示面板的背光源13。 有源矩阵基板1包括由硅膜形成的光电二极管7和用于屏蔽来自背光源13的照明光的光电二极管7的遮光膜8.光电二极管7和遮光膜8设置在基底基板5上。 遮光膜8由半导体或绝缘体形成。 优选地，光电二极管7例如由多晶硅或连续晶粒硅制成，以具有随着进入光电二极管的光的波长变短的灵敏度而增加的特性。 遮光膜8由硅膜（例如非晶硅）形成，其随着光的波长变短而降低进入遮光膜的光的透射率。
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