MODULE MOISTURE BARRIER
    2.
    发明申请
    MODULE MOISTURE BARRIER 审中-公开
    模块水分障碍

    公开(公告)号:US20110083734A1

    公开(公告)日:2011-04-14

    申请号:US12901188

    申请日:2010-10-08

    IPC分类号: H01L31/0224 H01L31/18

    摘要: A photovoltaic module may include a substrate; a semiconductor layer adjacent to the substrate; a lead foil adjacent to the semiconductor layer; a cover glass adjacent to the lead foil, where the cover glass includes a top surface, a bottom surface, and an opening, where the opening penetrates the top and bottom surfaces of the cover glass, and the opening includes an opening lateral dimension; and a barrier layer between the cover glass and the semiconductor layer, where the barrier layer includes a barrier lateral dimension, where the barrier lateral dimension is greater than the opening lateral dimension.

    摘要翻译: 光伏模块可以包括基板; 邻近衬底的半导体层; 邻近半导体层的铅箔; 与所述铅箔相邻的盖玻片,其中所述盖玻璃包括顶表面,底表面和开口,其中所述开口穿透所述盖玻璃的顶表面和底表面,并且所述开口包括开口横向尺寸; 以及所述覆盖玻璃和所述半导体层之间的阻挡层,其中所述阻挡层包括阻挡侧向尺寸,其中所述阻挡侧向尺寸大于所述开口横向尺寸。

    PHOTOVOLTAIC DEVICE WITH A METAL SULFIDE OXIDE WINDOW LAYER
    3.
    发明申请
    PHOTOVOLTAIC DEVICE WITH A METAL SULFIDE OXIDE WINDOW LAYER 审中-公开
    具有金属硫化物窗户层的光伏器件

    公开(公告)号:US20120067422A1

    公开(公告)日:2012-03-22

    申请号:US13240101

    申请日:2011-09-22

    摘要: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

    摘要翻译: 描述了用于光伏器件和衬底结构的方法和器件。 在一个实施例中,光伏器件包括衬底结构和在衬底结构上形成的MS 1-xO x窗口层,其中M是来自由Zn,Sn和In组成的组的元素。 另一个实施方案涉及一种用于制造光伏器件的方法,包括通过溅射,蒸发沉积,CVD,化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成MS 1-xO x窗口层,其中M为 元素由Zn,Sn和In组成。