公开(公告)号：US06774052B2

公开(公告)日：2004-08-10

申请号：US10174889

申请日：2002-06-19

申请人： Bernhard Vögeli ,  Thomas Rueckes ,  Brent M. Segal

发明人： Bernhard Vögeli ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L2131

CPC分类号： H01L51/0504 ,  B82Y10/00 ,  H01L29/7722 ,  H01L51/0048 ,  Y10S438/903 ,  Y10S977/743

摘要： A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.

摘要翻译： 公开了一种制造可渗透的基极晶体管（PBT）的方法。 根据该方法，提供半导体基板，在基板上设置基底层，在基底层上生长半导体层。 基层包括可以在半导体衬底上生长或沉积的金属纳米管。 纳米管基层分离半导体材料的发射极和集电极层。

公开(公告)号：US06759693B2

公开(公告)日：2004-07-06

申请号：US10175586

申请日：2002-06-19

申请人： Bernhard Vögeli ,  Thomas Rueckes ,  Brent M. Segal

发明人： Bernhard Vögeli ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L31109

CPC分类号： H01L51/0575 ,  B82Y10/00 ,  H01L29/7722 ,  H01L51/0048 ,  Y10S977/72 ,  Y10S977/734

摘要： A permeable base transistor (PBT) having a base layer including metallic nanotubes embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter and collector layers of the semiconductor material.

摘要翻译： 公开了一种具有嵌入在半导体晶体材料中的金属纳米管的基底层的可渗透的基极晶体管（PBT）。 纳米管基层分离半导体材料的发射极和集电极层。

公开(公告)号：US08699268B2

公开(公告)日：2014-04-15

申请号：US11973035

申请日：2007-10-05

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： G11C11/50 ,  G11C11/52

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的漏极的场效应器件。 在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。 源区域连接到相应的终端。 栅极结构设置在沟道区域上并连接到相应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。 纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

公开(公告)号：US08400053B2

公开(公告)日：2013-03-19

申请号：US12136624

申请日：2008-06-10

申请人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

发明人： Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01J63/04

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/796 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/943 ,  Y10T428/24893 ,  Y10T428/24917

摘要： Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. To make a nanofabric, a substrate is provided. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density. The nanofabrics and articles have characteristics desirable for various electrical systems such as memory circuits and conductive traces and pads.

摘要翻译： 公开了碳纳米管薄膜，层，织物，丝带，元件和制品。 为了制造各种制品，某些实施方案提供了基材。 将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物。 根据限定的图案选择性地去除无纺织物的部分以产生制品。 为了制造纳米纤维，提供了基材。 将预制的纳米管施加到基底的表面以产生碳纳米管的无纺织物，其中无纺织物具有基本均匀的密度。 纳米材料和制品具有对各种电气系统（诸如存储电路和导电迹线和焊盘）所期望的特性。

公开(公告)号：US08115187B2

公开(公告)日：2012-02-14

申请号：US12124475

申请日：2008-05-21

申请人： Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

发明人： Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

IPC分类号： H01L29/02

CPC分类号： H01J21/10 ,  H01J3/021 ,  H01J19/38 ,  H01J2203/0232 ,  Y10S977/742

摘要： Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.

摘要翻译： 提供具有碳纳米管膜，层，带和织物的真空微电子器件。 本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成 设备。 在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中，使用用于加强纳米管织物层的方法。 公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。 在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

公开(公告)号：US08058089B2

公开(公告)日：2011-11-15

申请号：US12415247

申请日：2009-03-31

申请人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

发明人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

IPC分类号： H01L21/00

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/796 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/943 ,  Y10T428/24893 ,  Y10T428/24917

摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

摘要翻译： 公开了诸如存储单元的机电电路及其制造方法。 这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。 电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。 在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。 每个带包括一个或多个纳米管。

公开(公告)号：US07948082B2

公开(公告)日：2011-05-24

申请号：US12195675

申请日：2008-08-21

申请人： Brent M. Segal ,  Thomas Rueckes ,  Claude L. Bertin

发明人： Brent M. Segal ,  Thomas Rueckes ,  Claude L. Bertin

IPC分类号： H01L23/48 ,  H01L21/302 ,  D01F9/12

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0023 ,  H01L2924/0002 ,  Y10S977/724 ,  Y10S977/762 ,  Y10S977/767 ,  Y10S977/856 ,  H01L2924/00

摘要： Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.

摘要翻译： 公开了纳米线制品及其制造方法。 导电制品包括沿着制品限定多个导电通路的多个接触接触的纳米线段。 纳米线段可以是半导体纳米线，金属纳米线，纳米管，单壁碳纳米管，多壁碳纳米管或与纳米管缠结的纳米线。 各个片段可以具有不同的长度，并且可以包括长度短于制品的长度的片段。 捆扎材料可以被定位成接触多个纳米线段的一部分。 捆扎材料可以被图案化以产生具有暴露纳米线织物的区域的开口的框架的形状。 这种捆扎层也可以用于与纳米线织物的电接触，特别是用于电缝合以降低织物的整体阻力。

公开(公告)号：US07928523B2

公开(公告)日：2011-04-19

申请号：US12512428

申请日：2009-07-30

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash

IPC分类号： H01L29/82

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

摘要翻译： 在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。 另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性 使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

公开(公告)号：US20110083319A1

公开(公告)日：2011-04-14

申请号：US12953076

申请日：2010-11-23

申请人： Claude L. Bertin ,  Brent M. Segal ,  Thomas Rueckes ,  Jonathan W. Ward

发明人： Claude L. Bertin ,  Brent M. Segal ,  Thomas Rueckes ,  Jonathan W. Ward

IPC分类号： H01H11/00 ,  B82Y40/00

CPC分类号： H01L23/62 ,  B82Y10/00 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/0251 ,  H01L51/0048 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3011 ,  H05K1/0259 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49204

摘要： Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.

摘要翻译： 纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关。 用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。 开关耦合到保护电路和放电路径。 纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。 激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。 纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。 纳米管开关可以在芯片载体上。 根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。 可以在激活和去激活状态之间重复地编程ESD电路，以便重复激活和去激活受保护电路的ESD保护。 纳米管开关基于输入焊盘上的信号幅度提供保护。

公开(公告)号：US07911831B2

公开(公告)日：2011-03-22

申请号：US11939316

申请日：2007-11-13

申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

IPC分类号： G11C11/50

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  G11C2213/17 ,  H01L27/112 ,  H01L27/11233 ,  H01L27/115 ,  H01L27/11521 ,  H01L51/0048 ,  H01L51/0052

摘要： Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductive material; and an electromechanically-deflectable nanotube switching element in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region.

摘要翻译： 在一个方面，非易失性晶体管器件包括源极和漏极之间的沟道; 由半导体或导电材料制成的栅极结构，设置在通道上方的绝缘体上; 由半导体或导电材料制成的控制门; 以及与栅极结构和控制栅极结构中的一个固定接触并且不与栅极结构和控制栅极结构中的另一个固定接触的机电偏转的纳米管开关元件。 该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。 网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。