摘要:
A coated phosphor, formed by a powder of individual grains of a phosphor as base material, the grains being coated with a coating material. The layer comprises a plurality of individual layers and is particulate in form, the individual primary particles of the layer being at least 5 nm in size. The mean layer thickness is at least 20 nm.
摘要:
A coated phosphor, formed by a powder of individual grains of a phosphor as base material, the grains being coated with a coating material. The layer comprises a plurality of individual layers and is particulate in form, the individual primary particles of the layer being at least 5 nm in size. The mean layer thickness is at least 20 nm.
摘要:
A coated luminescent material having a luminescent material powder formed by grains, the luminescent grains being coated, and the coating being at most 5 nm, preferably at most 2 nm.
摘要:
Phosphor from the class of the oxynitridosilicates, having a cation M which is doped with divalent europium and having the empirical formula M(1-c)Si2O2N2:DC, where M=Sr or M=Sr(1-x-y)BaYCax with x+y
摘要翻译:具有掺杂有二价铕的阳离子M并具有经验式M(1-c)2 Si 2 O 2的氧氮硅酸盐类的荧光体 其中M = Sr或M = Sr(1-xy)Ba Y,其中M = Sr或M = 使用x + y <0.5的氧化硅酸盐,完全或主要包含高温稳定的改性HT的氧氮化硅酸盐。
摘要:
Phosphor from the class of the oxynitridosilicates, having a cation M which is doped with divalent europium and having the empirical formula M(1-c)Si2O2N2:Dc, where M=Sr or M=Sr(1-x-y)BaYCax with x+y
摘要翻译:具有掺杂有二价铕的阳离子M并且具有经验式M(1-c)Si 2 O 2 N 2:Dc的氧基二硅酸盐的荧光体,其中M = Sr或M = Sr(1-xy)BaYCax,其x + 使用y <0.5,完全或主要包含高温稳定的改性HT的氧氮硅酸盐。
摘要:
A method of producing an optoelectronic semiconductor chip includes providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body, wherein a matrix material is incompletely crosslinked and/or cured, and wherein the conversion medium body exhibits at room temperature a hardness of Shore A 0 to Shore A 35 and/or a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body wherein after curing the hardness of the conversion medium body is Shore A 30 to Shore D 80.
摘要:
A method of producing an optoelectronic semiconductor chip includes providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body, wherein a matrix material is incompletely crosslinked and/or cured, and wherein the conversion medium body exhibits at room temperature a hardness of Shore A 0 to Shore A 35 and/or a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body wherein after curing the hardness of the conversion medium body is Shore A 30 to Shore D 80.
摘要:
An optical element (14) is specified which is suitable for an optoelectronic component and has a carrier part (1) and a beam shaping part (12), wherein the beam shaping part is molded onto the carrier part, or vice versa. A corresponding production method and a composite device comprising the optical element are furthermore specified.
摘要:
An optoelectronic component having a basic housing or frame (12) and at least one semiconductor chip (20), specifically a radiation-emitting or -receiving semiconductor chip, in a cavity (18) of the basic housing. In order to increase the efficiency of the optoelectronic component (10), reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound (28) filled at least partly into the cavity (18) is provided, the material and the quantity of the filling compound (28) being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas (30) of the filling compound serve as reflector.
摘要:
Disclosed is a radiation emitting and/or receiving semiconductor component comprising at least one radiation emitting and/or receiving semiconductor chip (1), which is disposed in a recess (2) of a housing base body (3) and is there encapsulated with an encapsulant (4) that is readily transparent to electromagnetic radiation emitted and/or received by the semiconductor chip (1). The recess (2) comprises a chip well (21) in which the semiconductor chip (1) is secured, and a trench (22) that runs at least partway around the chip well (21) inside the recess (2), such that between the chip well (21) and the trench (22) the housing base body (3) comprises a wall (23) whose apex, viewed from a bottom face of the chip well (21), lies below the level of the surface of the housing base body (3) from which the recess (2) leads into the housing base body (3), and the encapsulant (4) extends outward from the chip well (21) over the wall into the trench (22). A corresponding housing base body is also disclosed.