公开(公告)号：US06380096B2

公开(公告)日：2002-04-30

申请号：US09201590

申请日：1998-11-30

申请人： Hoiman Hung ,  Joseph P Caulfield ,  Sum-Yee Betty Tang ,  Jian Ding ,  Tianzong Xu

发明人： Hoiman Hung ,  Joseph P Caulfield ,  Sum-Yee Betty Tang ,  Jian Ding ,  Tianzong Xu

IPC分类号： H01L21302

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76808 ,  Y10S438/906 ,  Y10S438/954

摘要： An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue. The trench etch preferably includes the five substeps of opening the ARC, etching through the upper oxide layer but stopping on the upper nitride layers, a first post-etch treatment for removing residue, a nitride removal of the exposed portions of the upper and lower nitride layers, and a second post-etch treatment for remaining further residues. The oxide etches selective to nitride are accomplished using a fluorocarbon chemistry with high bias and a high temperature for a silicon-based scavenger for fluorine placed next to the plasma. The nitride etches and removal are accomplished by adding an oxygen-containing gas to a fluorocarbon. The final nitride removal is accomplished with very low bias power to increase selectivity to nitride and reduce sputtering of the underlying copper. The post-etch treatments are oxygen plasmas with zero bias power.

摘要翻译： 一种集成的原位氧化物蚀刻工艺，特别适用于铜上的沉孔双镶嵌结构，具有一层间电介质层，一层较低的氮化物阻挡层，一层较低的氧化物介电层，一层较低的氮化物阻挡层， 抗反射涂层（ARC）。 该工艺分别用光刻法分为沉孔蚀刻和沟槽蚀刻，并且每个步骤优选在具有主要产生等离子体的电感耦合等离子体源的高密度等离子体反应器和支撑晶片的电容耦合基座并且产生 偏置力。 沉孔蚀刻优选包括打开ARC的至少四个子步骤，蚀刻通过上部氧化物和氮化物层，选择性地蚀刻低氧化物层但停止在下部氮化物层上，以及用于去除残留物的蚀刻后处理。 沟槽蚀刻优选包括打开ARC的五个子步骤，蚀刻穿过上部氧化物层但停止在上部氮化物层上，第一次蚀刻后处理以除去残余物，去除上部和下部氮化物的暴露部分的氮化物 层，以及用于剩余另外的残余物的第二次蚀刻后处理。 对氮化物的选择性的氧化物蚀刻是使用氟离子化学方法实现的，该化合物具有高偏压和高温，用于放置在等离子体旁边的用于氟的硅基清除剂。 通过向碳氟化合物中加入含氧气体来实现氮化物蚀刻和去除。 最终的氮化物去除通过非常低的偏置功率实现，以增加对氮化物的选择性并减少底层铜的溅射。 蚀刻后处理是具有零偏压功率的氧等离子体。

公开(公告)号：US06399511B2

公开(公告)日：2002-06-04

申请号：US09728294

申请日：2000-12-01

申请人： Betty Tang ,  Jian Ding

发明人： Betty Tang ,  Jian Ding

IPC分类号： H01L213065

CPC分类号： H01L21/76807 ,  H01L21/31116

摘要： A dielectric etch process applicable etching a dielectric layer with an underlying stop layer. It is particularly though not necessarily applicable to forming a dual-damascene interconnect structure by a counterbore process, in which a deep via is etched prior to the formation of a trench connecting two of more vias. A single metallization fills the dual-damascene structure. The substrate is formed with a lower stop layer, a lower dielectric layer, an upper stop layer, and an upper dielectric layer. For example, the dielectric layers may be silicon dioxide, and the stop layers, silicon nitride. The initial deep via etch includes at least two substeps. A first substep includes a non-selective etch through the upper stop layer followed by a second substep of selectively etching through the lower dielectric layer and stopping on the lower stop layer. The first substep may be preceded by yet another substep including a selective etch part ways through the upper dielectric layer. For the oxide/nitride compositions, the selective etch is based on a fluorocarbon and argon chemistry, preferably with a lean etchant of CHF3 combined with a polymer former, such as C2F6, C4F8, or CH2F2, and the non-selective etch includes a fluorocarbon or hydrocarbon, argon and an oxygen-containing gas, such as CO. The counterbore etch is preferably performed in a high-density plasma reactor which allows the plasma source region to be powered separately from a sheath bias located adjacent to the wafer pedestal.

摘要翻译： 电介质蚀刻工艺可以用下面的停止层蚀刻电介质层。 特别地，不一定适用于通过沉孔工艺形成双镶嵌互连结构，其中在形成连接两个更多通孔的沟槽之前蚀刻深通孔。 单一的金属化填充了双镶嵌结构。 衬底形成有下停止层，下介电层，上阻挡层和上电介质层。 例如，电介质层可以是二氧化硅，并且阻挡层，氮化硅。 初始深通孔蚀刻包括至少两个子步骤。 第一子步骤包括通过上停止层的非选择性蚀刻，然后是选择性蚀刻穿过下介电层并停止在下停止层上的第二子步骤。 第一子步骤之前可以有另一子步骤，其中包括通过上电介质层的选择性蚀刻部分。 对于氧化物/氮化物组合物，选择性蚀刻基于碳氟化合物和氩气化学，优选用与聚合物形成剂如C 2 F 6，C 4 F 8或CH 2 F 2结合的CHF 3的贫蚀刻剂，并且非选择性蚀刻包括碳氟化合物 或烃，氩气和含氧气体，例如CO。沉孔蚀刻优选在高密度等离子体反应器中进行，其允许等离子体源区域与位于晶片基座附近的护套偏压分开供电。

公开(公告)号：US06211092B1

公开(公告)日：2001-04-03

申请号：US09112864

申请日：1998-07-09

申请人： Betty Tang ,  Jian Ding

发明人： Betty Tang ,  Jian Ding

IPC分类号： H01L213065

CPC分类号： H01L21/76807 ,  H01L21/31116

摘要： A dielectric etch process particularly applicable to forming a dual-damascene interconnect structure by a counterbore process, in which a deep via is etched prior to the formation of a trench connecting two of more vias. A single metallization fills the dual-damascene structure. The substrate is formed with a lower stop layer, a lower dielectric layer, an upper stop layer, and an upper dielectric layer. For example, the dielectric layers may be silicon dioxide, and the stop layers, silicon nitride. The initial deep via etch includes at least two substeps. A first substep includes a non-selective etch through the upper stop layer followed by a second substep of selectively etching through the lower dielectric layer and stopping on the lower stop layer. The first substep may be preceded by yet another substep including a selective etch part ways through the upper dielectric layer. For the oxide/nitride compositions, the selective etch is based on a fluorocarbon and argon chemistry, preferably with a lean etchant of CHF3 combined with a polymer former, such as C2F6, C4F8, or CH2F2, and the non-selective etch includes a fluorocarbon or hydrocarbon, argon and an oxygen-containing gas, such as CO. The counterbore etch is preferably performed in a high-density plasma reactor which allows the plasma source region to be powered separately from a sheath bias located adjacent to the wafer pedestal.

摘要翻译： 特别适用于通过沉孔工艺形成双镶嵌互连结构的电介质蚀刻工艺，其中在形成连接两个更多通孔的沟槽之前蚀刻深通孔。 单一的金属化填充了双镶嵌结构。 衬底形成有下停止层，下介电层，上阻挡层和上电介质层。 例如，电介质层可以是二氧化硅，并且阻挡层，氮化硅。 初始深通孔蚀刻包括至少两个子步骤。 第一子步骤包括通过上停止层的非选择性蚀刻，然后是选择性蚀刻穿过下介电层并停止在下停止层上的第二子步骤。 第一子步骤之前可以有另一子步骤，其中包括通过上电介质层的选择性蚀刻部分。 对于氧化物/氮化物组合物，选择性蚀刻基于碳氟化合物和氩气化学，优选用与聚合物形成剂如C 2 F 6，C 4 F 8或CH 2 F 2结合的CHF 3的贫蚀刻剂，并且非选择性蚀刻包括碳氟化合物 或烃，氩气和含氧气体，例如CO。沉孔蚀刻优选在高密度等离子体反应器中进行，其允许等离子体源区域与位于晶片基座附近的护套偏压分开供电。

公开(公告)号：USD740433S1

公开(公告)日：2015-10-06

申请号：US29461275

申请日：2013-07-20

申请人： Megan Zhu ,  Jian Ding

设计人： Megan Zhu ,  Jian Ding

CPC分类号： A61H15/0085

公开(公告)号：US08978134B2

公开(公告)日：2015-03-10

申请号：US13882579

申请日：2011-11-18

申请人： Baichuan Nie ,  Jianpeng Sun ,  Jian Ding ,  Dong Xu ,  Zhen Zhou

发明人： Baichuan Nie ,  Jianpeng Sun ,  Jian Ding ,  Dong Xu ,  Zhen Zhou

IPC分类号： G06F11/10 ,  H04L29/06

CPC分类号： H04L63/1408 ,  H04L63/1433

摘要： The invention discloses a security configuration verification device for performing a security configuration verification on a network device, which comprises: one or more preconfigured scanning policies; a scanning policy generator, which selects a scanning policy from the one or more preconfigured scanning policies to generate a new scanning policy corresponding to the network device; and a scanner, which performs the security scanning on the network device with the generated new scanning policy and thereby performs the security configuration verification. The invention also discloses a corresponding security configuration verification method and a network system employing the verification device.

摘要翻译： 本发明公开了一种用于在网络设备上执行安全配置验证的安全配置验证设备，包括：一个或多个预配置的扫描策略; 扫描策略生成器，其从所述一个或多个预配置的扫描策略中选择扫描策略，以生成与所述网络设备相对应的新的扫描策略; 以及扫描器，其利用所生成的新扫描策略在网络设备上执行安全扫描，从而执行安全配置验证。 本发明还公开了一种对应的安全配置验证方法和采用验证设备的网络系统。

公开(公告)号：US07521000B2

公开(公告)日：2009-04-21

申请号：US10925887

申请日：2004-08-25

申请人： Madhavi R. Chandrachood ,  Nicole Sandlin ,  Yung-Hee Yvette Lee ,  Jian Ding

发明人： Madhavi R. Chandrachood ,  Nicole Sandlin ,  Yung-Hee Yvette Lee ,  Jian Ding

IPC分类号： C03C15/00

CPC分类号： C03C17/06 ,  C03C2217/26 ,  C03C2218/33 ,  C03C2218/34 ,  C23F4/00 ,  G03F1/54 ,  G03F1/80 ,  H01J37/321 ,  H01J2237/3341

摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

公开(公告)号：US20060257946A1

公开(公告)日：2006-11-16

申请号：US10559687

申请日：2004-06-04

申请人： Jian Ding ,  Lee Lomas

发明人： Jian Ding ,  Lee Lomas

IPC分类号： G01N33/542 ,  G01N33/53

CPC分类号： G01N33/6887 ,  G01N33/6893 ,  G01N2333/4724 ,  G01N2333/75 ,  G01N2800/324

摘要： Certain biomarkers and biomarker combinations are useful in a qualifying ischaemic heart disease status in a patient. A diagnostic methodology employing these biomarkers and combinations can distinguish between ischaemic heart disease and normal, as well as between cases of severe myocardial infarction versus mild myocardial infarction.

摘要翻译： 某些生物标志物和生物标志物组合在患者的合格缺血性心脏病状态中是有用的。 使用这些生物标志物和组合的诊断方法可以区分缺血性心脏病和正常，以及严重心肌梗死与轻度心肌梗死的病例。

公开(公告)号：US20050207569A1

公开(公告)日：2005-09-22

申请号：US11016479

申请日：2004-12-16

申请人： Ji Zhang ,  Hain-Ching Liu ,  Jian Ding

发明人： Ji Zhang ,  Hain-Ching Liu ,  Jian Ding

IPC分类号： H04L29/06 ,  H04N7/167 ,  H04N7/24 ,  H04L9/00

CPC分类号： H04L29/06 ,  H04L29/06027 ,  H04L63/0428 ,  H04L65/4084 ,  H04L65/607 ,  H04L65/80 ,  H04N21/23476 ,  H04N21/6373

摘要： Methods and apparatus for preparing data for encrypted transmission. According to the current invention, a data bitstream may be processed to create side information. After extracting, generating and/or acquiring the side data, some or all of the data bitstream may be encrypted and then combined to create a combined data bitstream, ready for transmission. Subsequently, the combined data bitstream may be transmitted over a network. By processing a data bitstream to extract metadata about the bitstream before encrypting the data, some processing such as splicing, bit rate switching and/or statistical multiplexing done after encryption may be executed without requiring costly de-encryption/re-encryption steps based, in part, on inspecting the contents of the side data. The bitstream may represent video, audio, image or other data types. In some examples according to the current invention, a combined data bitstream may comprise multiple bitstreams, each at a different bit rate.

摘要翻译： 用于准备加密传输数据的方法和装置。 根据本发明，可以处理数据比特流以创建边信息。 在提取，生成和/或获取边数据之后，可以对数据比特流中的一些或全部进行加密，然后组合以产生准备传输的组合数据比特流。 随后，组合的数据比特流可以通过网络传输。 通过处理数据比特流以在加密数据之前提取关于比特流的元数据，可以在不需要昂贵的去加密/重新加密步骤的情况下执行加密之后完成的诸如拼接，比特率切换和/或统计多路复用的一些处理， 部分，检查边数据的内容。 比特流可以表示视频，音频，图像或其他数据类型。 在根据本发明的一些示例中，组合数据比特流可以包括多个比特流，每个比特流以不同的比特率。

公开(公告)号：US06887895B2

公开(公告)日：2005-05-03

申请号：US10486880

申请日：2002-08-14

申请人： Jianmin Yue ,  Shengping Yang ,  Jian Ding ,  Dong Xiao ,  Shengtao Yuan

发明人： Jianmin Yue ,  Shengping Yang ,  Jian Ding ,  Dong Xiao ,  Shengtao Yuan

IPC分类号： C07D493/08 ,  A61K31/365 ,  A61K31/366 ,  A61P9/00 ,  A61P17/00 ,  A61P31/10 ,  A61P35/00 ,  A61P35/04 ,  C07B61/00 ,  C07D311/94 ,  C07D311/78

CPC分类号： A61K31/365 ,  C07D311/94

摘要： The invention relates to pseudolaric acid-B derivatives of general formula (I), wherein (a) R1 is cyano, heterocyclyl, COXR′ or CON(R″)2, wherein X is O or NH, R′ is H, cycloalkyl, alkyl, heterocyclic alkyl or arylalkyl, each R″ is independently alkyl, cycloalkyl or heterocyclicalkyl; (b) R2 is H, alkylacyl, arylalkylacyl, arylacyl or heterocyclylacyl; (c) R3 is COXY, amino or halogen, wherein X is O or NH, Y is H, NH2, hydroxy, alkyl, cycloalkyl, heterocyclicalkyl, hetroatom-substituted alkyl, tertiary amino-substituted ammonioalkyl, aryl, arylalkyl or polyhydroxyalkyl. The invention also relates to processes for preparing such derivatives and antitumor or antifungal pharmaceutical compositions containing the same.

摘要翻译： 本发明涉及通式（I）的假极酸-B衍生物，其中（a）R 1是氰基，杂环基，COXR'或CON（R“）2 其中X是O或NH，R'是H，环烷基，烷基，杂环烷基或芳烷基，每个R“独立地是烷基，环烷基或杂环烷基; （b）R 2是H，烷基酰基，芳基烷基酰基，芳基酰基或杂环基酰基; （c）R 3是COXY，氨基或卤素，其中X是O或NH，Y是H，NH 2，羟基，烷基，环烷基，杂环烷基，杂原子 - 取代的烷基，叔氨基取代的氨基烷基，芳基，芳烷基或聚羟烷基。 本发明还涉及制备此类衍生物的方法和含有该衍生物的抗肿瘤或抗真菌药物组合物。

公开(公告)号：US06818140B2

公开(公告)日：2004-11-16

申请号：US10002397

申请日：2001-10-31

申请人： Jian Ding

发明人： Jian Ding

IPC分类号： H01L2100

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

摘要翻译： 一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。