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    Materials and methods for chemical-mechanical planarization
    5.
    发明授权
    Materials and methods for chemical-mechanical planarization 失效
    化学机械平面化的材料和方法

    公开(公告)号：US06910951B2

    公开(公告)日：2005-06-28

    申请号：US10370781

    申请日：2003-02-24

    申请人： Sudhakar Balijepalli ,  Dale J. Aldrich ,  Laura A. Grier

    发明人： Sudhakar Balijepalli ,  Dale J. Aldrich ,  Laura A. Grier

    IPC分类号： B24B37/04 ,  B24B1/00

    CPC分类号： B24B37/245 ,  B24B37/042 ,  B24B53/017

    摘要： Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

    摘要翻译： 提供了在使用具有开孔形成泡沫结构的固定研磨平坦化垫的半导体器件制造期间，在半导体衬底上形成的诸如氧化物或金属的材料层，例如氧化物或金属的化学机械平坦化的材料和方法，通过调节而产生游离磨粒， 与载体液体结合以在平坦化焊盘的抛光表面上形成原位浆料，结合半导体衬底和平坦化焊盘之间的相对运动，倾向于从半导体衬底的表面去除材料层。 根据材料层的组成，可以通过操纵载体液体的pH或氧化剂含量来控制从半导体衬底去除材料的速率。

    Method of manufacturing a fixed abrasive material
    7.
    发明授权
    Method of manufacturing a fixed abrasive material 失效
    制造固定磨料的方法

    公开(公告)号：US07066801B2

    公开(公告)日：2006-06-27

    申请号：US10369628

    申请日：2003-02-21

    申请人： Sudhakar Balijepalli ,  Dale J. Aldrich ,  Laura A. Grier ,  Bedri Erdem ,  Gregory F. Meyers

    发明人： Sudhakar Balijepalli ,  Dale J. Aldrich ,  Laura A. Grier ,  Bedri Erdem ,  Gregory F. Meyers

    IPC分类号： B24D11/00

    CPC分类号： B24D18/00 ,  B24D3/32 ,  B24D13/147

    摘要： Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m3 to 1200 kg/m3.

    摘要翻译： 本发明提供了一种从含水聚合物分散体制造适合于CMP平坦化焊盘的固定研磨材料的方法，所述聚合物分散体还包括包含起泡聚合物分散体的磨料颗粒，将泡沫施加到基材，模具或载体上并固化泡沫以形成 具有包含约5-85重量％的磨料颗粒和约350kg / m 3至1200kg / m 3的干密度的开孔结构的固定磨料。 。

    Materials and methods for low pressure chemical-mechanical planarization
    8.
    发明授权
    Materials and methods for low pressure chemical-mechanical planarization 失效
    低压化学机械平面化的材料和方法

    公开(公告)号：US06918821B2

    公开(公告)日：2005-07-19

    申请号：US10704982

    申请日：2003-11-12

    申请人： Sudhakar Balijepalli ,  Dale J. Aldrich ,  Laura A. Grier ,  Michael E. Mills

    发明人： Sudhakar Balijepalli ,  Dale J. Aldrich ,  Laura A. Grier ,  Michael E. Mills

    IPC分类号： B24B37/04 ,  B24B49/16 ,  B24B53/007 ,  B24B1/00

    CPC分类号： B24B53/017 ,  B24B49/16

    摘要： Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in meatallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.

    摘要翻译： 提供了用于使用小于约2.5psi的向下力的材料层的化学机械平坦化的材料和方法，同时保持材料去除速率通常类似于使用较高下推力获得的材料去除速率，同时提高该方法相对于 在阻挡材料上形成的主要材料。 本文公开的材料和方法适用于半导体器件制造期间的肉食化操作，特别是在主要材料是诸如铜的较软金属的过程中，并且阻挡材料是较硬的材料，例如金属氮化物。