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公开(公告)号：US10239982B2
公开(公告)日：2019-03-26
申请号：US15439604
申请日：2017-02-22
发明人： Carlton Grant Willson , Gregory Blachut , Michael Maher , Yusuke Asano , Christopher John Ellison
IPC分类号： C08F297/00 , B32B5/16 , B05D3/10 , B05D7/26 , B05D7/00 , C09D153/00 , G03F7/00 , H01L21/027 , B82Y40/00
摘要： The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.
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公开(公告)号：US20170240681A1
公开(公告)日：2017-08-24
申请号：US15439604
申请日：2017-02-22
发明人： Carlton Grant Willson , Gregory Blachut , Michael Maher , Yusuke Asano , Christopher John Ellison
IPC分类号： C08F297/00 , B05D7/00 , H01L21/027 , B05D7/26 , G03F7/00 , C09D153/00 , B05D3/10
CPC分类号： C08F297/00 , B05D3/108 , B05D7/26 , B05D7/542 , B81C2201/0149 , B82Y40/00 , C09D153/00 , G03F7/0002 , H01L21/0271
摘要： The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.
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公开(公告)号：US20150353763A1
公开(公告)日：2015-12-10
申请号：US14827876
申请日：2015-08-17
IPC分类号： C09D167/00
CPC分类号： C09D167/00 , B05C21/005 , B05D1/005 , B05D3/00 , B05D5/00 , B82Y10/00 , B82Y40/00 , C08F8/02 , C08F112/14 , C08F2810/40 , C08G63/6952 , G03F7/0002 , Y10T428/24851 , Y10T428/31504
摘要： The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
摘要翻译： 本发明包括以非常低的分子量自组装形成非常小的特征的二嵌段共聚物体系。 在一个实施方案中，嵌段共聚物中的一种聚合物含有硅，另一种聚合物是聚丙交酯。 在一个实施方案中，嵌段共聚物通过阴离子和开环聚合反应的组合合成。 在一个实施方案中，该嵌段共聚物的目的是形成可用作光刻图案化中的蚀刻掩模的纳米多孔材料。
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4.发明授权Anhydride copolymer top coats for orientation control of thin film block copolymers 有权用于薄膜嵌段共聚物取向控制的酐共聚物顶涂层公开(公告)号：US09157008B2
公开(公告)日：2015-10-13
申请号：US13761918
申请日：2013-02-07
发明人： Carlton Grant Willson , Christopher John Ellison , Takehiro Seshimo , Julia Cushen , Christopher M. Bates , Leon Dean , Logan J. Santos , Erica L. Rausch
CPC分类号： G03F1/50 , B05D1/005 , B05D5/00 , B05D7/52 , B05D7/56 , B05D2252/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C09D137/00 , C09D167/00 , G03F7/0002 , Y10T428/24802 , Y10T428/31663 , Y10T428/31855
摘要： Random copolymer top coats are described that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films.
摘要翻译： 描述了可以将旋涂在嵌段共聚物薄膜上的无规共聚物顶涂层，并用于控制顶部涂层 - 嵌段共聚物界面的界面能。 顶涂层可溶于弱碱水溶液，一旦沉积在嵌段共聚物薄膜上就可以改变表面能。 使用自组装嵌段共聚物来生产先进的平版印刷图案依赖于它们在薄膜中的取向控制。
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5.发明申请Anhydride Copolymer Top Coats for Orientation Control of Thin Film Block Copolymers 有权酸酐共聚物顶涂层用于薄膜嵌段共聚物的取向控制公开(公告)号：US20130344242A1
公开(公告)日：2013-12-26
申请号：US13922011
申请日：2013-06-19
发明人： Carlton Grant Willson , Christopher John Ellison , Takehiro Seshimo , Julia Cushen , Christopher M. Bates , Leon Dean , Logan J. Santos , Erica L. Rausch , Michael Maher
IPC分类号： C09D137/00
CPC分类号： B05D7/56 , B05D1/005 , B05D5/00 , B05D7/52 , B05D2252/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C09D137/00 , G03F7/0002
摘要： The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae perpendicular to the plane of the block copolymer film is required for most applications. The preferred method to achieve orientation is by heating. The present invention involves the use of polarity-switching top coats to control block copolymer thin film orientation by heating. The top coats can be spin coated onto block copolymer thin films from polar casting solvents and they change composition upon thermal annealing to become “neutral”. Top coats allow for the facile orientation control of block copolymers which would otherwise not be possible by heating alone.
摘要翻译： 使用自组装嵌段共聚物结构产生先进的光刻图案依赖于这些结构在薄膜中的取向的控制。 特别地，对于大多数应用，需要垂直于嵌段共聚物膜的平面的圆柱体和薄片的取向。 实现取向的优选方法是通过加热。 本发明涉及使用极性转换顶涂层通过加热控制嵌段共聚物薄膜取向。 顶涂层可以从极性浇铸溶剂中旋涂到嵌段共聚物薄膜上，并且它们在热退火时改变组成以变成“中性”。 顶涂层允许嵌段共聚物的容易取向控制，否则通过单独加热将不可能。
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6.发明授权Anhydride copolymer top coats for orientation control of thin film block copolymers 有权用于薄膜嵌段共聚物取向控制的酐共聚物顶涂层公开(公告)号：US09314819B2
公开(公告)日：2016-04-19
申请号：US13922011
申请日：2013-06-19
发明人： Carlton Grant Willson , Christopher John Ellison , Takehiro Seshimo , Julia Cushen , Christopher M Bates , Leon Dean , Logan J Santos , Erica L Rausch , Michael Maher
IPC分类号： B05D7/26 , C09D137/00 , B05D7/00 , B05D1/00 , B05D5/00 , B81C1/00 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： B05D7/56 , B05D1/005 , B05D5/00 , B05D7/52 , B05D2252/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C09D137/00 , G03F7/0002
摘要： The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae perpendicular to the plane of the block copolymer film is required for most applications. The preferred method to achieve orientation is by heating. The present invention involves the use of polarity-switching top coats to control block copolymer thin film orientation by heating. The top coats can be spin coated onto block copolymer thin films from polar casting solvents and they change composition upon thermal annealing to become “neutral”. Top coats allow for the facile orientation control of block copolymers which would otherwise not be possible by heating alone.
摘要翻译： 使用自组装嵌段共聚物结构产生先进的光刻图案依赖于这些结构在薄膜中的取向的控制。 特别地，对于大多数应用，需要垂直于嵌段共聚物膜的平面的圆柱体和薄片的取向。 实现取向的优选方法是通过加热。 本发明涉及使用极性转换顶涂层通过加热控制嵌段共聚物薄膜取向。 顶涂层可以从极性浇铸溶剂中旋涂到嵌段共聚物薄膜上，并且它们在热退火时改变组成以变成“中性”。 顶涂层允许嵌段共聚物的容易取向控制，否则通过单独加热将不可能。
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7.发明申请Using Chemical Vapor Deposited Films to Control Domain Orientation in Block Copolymer Thin Films 审中-公开使用化学气相沉积膜控制嵌段共聚物薄膜中的畴取向公开(公告)号：US20150232689A1
公开(公告)日：2015-08-20
申请号：US14698253
申请日：2015-04-28
发明人： Carlton Grant Willson , William J. Durand , Christopher John Ellison , Christopher M. Bates , Takehiro Seshimo , Julia Cushen , Logan J. Santos , Leon Dean , Erica L. Rausch
IPC分类号： C09D153/00 , C03C17/30 , C03C17/34
CPC分类号： C09D153/00 , B29C43/32 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C03C17/30 , C03C17/3405 , C03C2218/152 , C23C16/44 , G03F7/0002 , Y10S977/788 , Y10S977/809 , Y10S977/811 , Y10S977/839 , Y10S977/888 , Y10S977/89 , Y10S977/891 , Y10T428/24802 , Y10T428/31504 , Y10T428/31663 , Y10T428/31931
摘要： The present invention uses vacuum deposited thin films of material to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.
摘要翻译： 本发明使用真空沉积的材料薄膜来产生与下面的嵌段共聚物膜的不同区域非优先相互作用的界面。 非优选界面防止形成润湿层并影响嵌段共聚物中结构域的取向。 沉积的聚合物的目的是在嵌段共聚物膜中产生可用作光刻图案的纳米结构特征。
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公开(公告)号：US09834700B2
公开(公告)日：2017-12-05
申请号：US14827876
申请日：2015-08-17
IPC分类号： C09D167/00 , B05D1/00 , B05D3/00 , B05D5/00 , C08G63/695 , B05C21/00 , C08F112/14 , G03F7/00 , B82Y10/00 , B82Y40/00 , C08F8/02
CPC分类号： C09D167/00 , B05C21/005 , B05D1/005 , B05D3/00 , B05D5/00 , B82Y10/00 , B82Y40/00 , C08F8/02 , C08F112/14 , C08F2810/40 , C08G63/6952 , G03F7/0002 , Y10T428/24851 , Y10T428/31504
摘要： The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
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9.发明申请Anhydride Copolymer Top Coats for Orientation Control of Thin Film Block Copolymers 审中-公开酸酐共聚物顶涂层用于薄膜嵌段共聚物的取向控制公开(公告)号：US20150370159A1
公开(公告)日：2015-12-24
申请号：US14839147
申请日：2015-08-28
发明人： Carlton Grant Willson , Christopher John Ellison , Takehiro Sleshimo , Julia Cushen , Christopher M. Bates , Leon Dean , Logan J. Santos , Erica L. Rausch
IPC分类号： G03F1/50 , C09D167/00
CPC分类号： G03F1/50 , B05D1/005 , B05D5/00 , B05D7/52 , B05D7/56 , B05D2252/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C09D137/00 , C09D167/00 , G03F7/0002 , Y10T428/24802 , Y10T428/31663 , Y10T428/31855
摘要： The present invention involves the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.
摘要翻译： 本发明涉及使用可以旋涂在嵌段共聚物薄膜上并用于控制顶部涂层 - 嵌段共聚物界面的界面能的无规共聚物顶涂层。 顶涂层可溶于弱碱水溶液，一旦沉积在嵌段共聚物薄膜上就可以改变表面能。 使用自组装嵌段共聚物来生产先进的平版印刷图案依赖于它们在薄膜中的取向控制。 顶涂层可能允许嵌段共聚物的容易取向控制，否则这将是相当具有挑战性的。
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公开(公告)号：US20150240110A1
公开(公告)日：2015-08-27
申请号：US14698365
申请日：2015-04-28
IPC分类号： C09D153/00
CPC分类号： C09D153/00 , B05D1/005 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/265 , Y10T428/24355 , Y10T428/265 , Y10T428/31935 , Y10T428/31938
摘要： The present invention relates to a method the synthesis and utilization of random, cross-linked, substituted polystyrene copolymers as polymeric cross-linked surface treatments (PXSTs) to control the orientation of physical features of a block copolymer deposited over the first copolymer. Such methods have many uses including multiple applications in the semi-conductor industry including production of templates for nanoimprint lithography.
摘要翻译： 本发明涉及合成和利用随机交联的取代的聚苯乙烯共聚物作为聚合交联表面处理（PXST）的方法，以控制沉积在第一共聚物上的嵌段共聚物的物理特征的取向。 这种方法具有许多用途，包括半导体工业中的多种应用，包括生产纳米压印光刻的模板。
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