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1.发明申请公开(公告)号：US20210366940A1
公开(公告)日：2021-11-25
申请号：US16471619
申请日：2018-11-07
发明人： Fangbin Fu , Huibin Guo , Jinchao Bai , Shoukun Wang , Hao Han , Yihe Jia , Yongzhi Song
IPC分类号： H01L27/12
摘要： The present disclosure discloses a manufacturing method of an array substrate, an array substrate, a display panel and a display device. The manufacturing method includes: forming a metal layer on a base substrate; forming a protective layer on the side, away from the base substrate, of the metal layer, wherein the protective layer is configured to protect the metal layer; forming photoresist on the side, away from the base substrate, of the protective layer; and processing the base substrate, on which the metal layer, the protective layer and the photoresist are formed, by means of a photoetching process to obtain a metal pattern.
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公开(公告)号：US10403756B2
公开(公告)日：2019-09-03
申请号：US15558104
申请日：2017-02-24
发明人： Jinchao Bai , Huibin Guo , Young Tae Hong
摘要： Embodiments of the present invention relate to a thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The TFT includes an active layer, an amorphous silicon (a-Si) connecting layer and a source-drain electrode layer. The active layer includes a channel region, a source region and a drain region; forming materials of the channel region include polycrystalline silicon (poly-Si); the a-Si connecting layer is disposed on a side of the active layer and includes a first connecting part and a second connecting part which are spaced from each other; the source-drain electrode layer includes a source electrode and a drain electrode which are spaced to each other; the source electrode is electrically connected with the source region through the first connecting part; and the drain electrode is electrically connected with the drain electrode through the second connecting part.
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公开(公告)号：US10197817B2
公开(公告)日：2019-02-05
申请号：US15507122
申请日：2016-09-07
发明人： Jinchao Bai , Yao Liu , Huibin Guo
IPC分类号： G02F1/01 , G02F1/1335 , G09G3/34 , H01L27/32 , H01L51/52 , H05B33/28 , H01L27/12 , H01L51/00
摘要： A substrate and a manufacturing method thereof, and a display device are provided. The substrate comprises a base substrate (101), a metal black matrix (111) and an anti-reflection pattern (112A, 112B) for reducing optical reflectivity of the metal black matrix (111), which are arranged on the base substrate (101), and the anti-reflection pattern (112A, 112B) is arranged on a side of the metal black matrix (111) close to a light emission side of the substrate. The anti-reflection pattern (112A, 112B) reduces reflectivity of the metal black matrix (111) on outside ambient light, increases a display contrast of a display device that includes the substrate, and thus improves display quality of the pictures.
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4.发明申请公开(公告)号：US20180197998A1
公开(公告)日：2018-07-12
申请号：US15741753
申请日：2017-01-25
发明人： Jinchao Bai , Huibin Guo , Xiangqian Ding , Jing Wang
IPC分类号： H01L29/786 , H01L27/12 , H01L21/223 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/223 , H01L27/1229 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678
摘要： The present application discloses A thin film transistor (TFT), including: a substrate; a source-drain layer comprising a source electrode and a drain electrode over the substrate; and an active layer comprising a poly-Si pattern and an amorphous-Si pattern having contact with the poly-Si pattern over the substrate. The amorphous-Si pattern is between the poly-Si pattern and the source-drain layer; the source electrode overlaps with the poly-Si pattern and the amorphous-Si pattern respectively in a direction substantially perpendicular to a surface of the substrate; and the drain electrode overlaps with the poly-Si pattern and the amorphous-Si pattern respectively in the direction substantially perpendicular to the surface of the substrate.
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公开(公告)号：US20150311222A1
公开(公告)日：2015-10-29
申请号：US14310826
申请日：2014-06-20
发明人： Jinchao Bai , Yao Liu , Liangliang Li , Xiangqian Ding , Zongjie Guo
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an array substrate, its manufacturing method, and a display device. The array substrate comprises a gate metal layer, a gate insulating layer, a source/drain metal layer, first common electrode lines arranged on an identical layer to the gate metal layer, a first via hole arranged in the gate insulating layer and corresponding to the first common electrode line, a source/drain metal filling part arranged within the first via hole, a second via hole in communication with the first via hole, and a transparent connection part. The first common electrode lines are, by means of the transparent connection part and the source/drain metal filling part, in electrical connection with each other through the second via hole. According to the present invention, it is able to reduce the depth of the via holes in the array substrate, and improve the uneven diffusion of an alignment layer.
摘要翻译： 本发明提供阵列基板，其制造方法和显示装置。 阵列基板包括栅极金属层，栅极绝缘层，源极/漏极金属层，布置在与栅极金属层相同的层上的第一公共电极线，布置在栅极绝缘层中并对应于栅极金属层的第一通孔 第一公共电极线，设置在第一通孔内的源极/漏极金属填充部，与第一通孔连通的第二通孔和透明连接部。 第一公共电极线通过透明连接部分和源极/漏极金属填充部分通过第二通孔彼此电连接。 根据本发明，能够减小阵列基板中的通孔的深度，并且可以改善取向层的不均匀扩散。
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6.发明授权公开(公告)号：US11094789B2
公开(公告)日：2021-08-17
申请号：US16497658
申请日：2019-04-12
发明人： Xiaolong Li , Jinchao Bai , Huibin Guo , Xiao Han , Yongzhi Song
IPC分类号： H01L29/417 , H01L27/32 , H01L29/40 , H01L29/66 , H01L29/786 , H01L21/3213 , H01L27/12 , H01L29/45
摘要： Embodiments of the present disclosure disclose a thin film transistor, a method for manufacturing a thin film transistor, an array substrate, and a display device. The thin film transistor includes a source electrode and a drain electrode, each of the source electrode and the drain electrode including a metal substrate and a conductive layer covering the metal substrate. An adhesion between the conductive layer and a photoresist material is larger than an adhesion between the metal substrate and the photoresist material. The metal substrate and the conductive layer are both formed on a base substrate, an orthographic projection of the conductive layer on the base substrate covers an orthographic projection of the metal substrate on the base substrate, and. an area of the orthographic projection of the conductive layer on the base substrate is larger than an area of the orthographic projection of the metal substrate on the base substrate.
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公开(公告)号：US11049889B2
公开(公告)日：2021-06-29
申请号：US16332882
申请日：2018-09-21
发明人： Xiao Han , Jinchao Bai , Xiangqian Ding , Huibin Guo
IPC分类号： H01L27/12 , G02F1/1343 , G02F1/1368 , H01L21/3065 , H01L21/308 , H01L21/3213
摘要： This disclosure provides an array substrate, a method for fabricating the same, a display panel, and a display device, where a first photo-resist layer is stripped in a changed order in that the first photo-resist layer on a source-drain is stripped through wet etching before a ohm contact layer film and an active layer film are etched in an electrically-conductive channel area (i.e., an electrically-conductive channel of a TFT is etched) to form an ohm contact layer and an active layer.
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8.发明授权公开(公告)号：US10236394B2
公开(公告)日：2019-03-19
申请号：US15741753
申请日：2017-01-25
发明人： Jinchao Bai , Huibin Guo , Xiangqian Ding , Jing Wang
IPC分类号： H01L27/12 , H01L29/786 , H01L21/223 , H01L29/66 , H01L29/417
摘要： The present application discloses A thin film transistor (TFT), including: a substrate; a source-drain layer comprising a source electrode and a drain electrode over the substrate; and an active layer comprising a poly-Si pattern and an amorphous-Si pattern having contact with the poly-Si pattern over the substrate. The amorphous-Si pattern is between the poly-Si pattern and the source-drain layer; the source electrode overlaps with the poly-Si pattern and the amorphous-Si pattern respectively in a direction substantially perpendicular to a surface of the substrate; and the drain electrode overlaps with the poly-Si pattern and the amorphous-Si pattern respectively in the direction substantially perpendicular to the surface of the substrate.
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公开(公告)号：US09673229B2
公开(公告)日：2017-06-06
申请号：US15177795
申请日：2016-06-09
发明人： Jinchao Bai , Yao Liu , Liangliang Li , Zhaohui Hao , Liang Sun
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L27/12 , G02F1/1368 , G02F1/1362 , G02F1/1345 , G02F1/1333 , H01L23/31 , G02F1/1343
CPC分类号： H01L27/124 , G02F1/133345 , G02F1/1345 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/134318 , G02F2201/121 , G02F2201/123 , G02F2201/40 , H01L23/3171 , H01L27/1214 , H01L27/1218 , H01L27/1248
摘要： An array substrate, a method for manufacturing the same and a display apparatus are provided. The array substrate comprises: a substrate (1); a common electrode (2) and a pixel electrode (10) sequentially formed on the substrate (1) and insulated from each other; a thin film transistor comprising a gate electrode (4), an active layer (7), a source electrode (8a) and a drain electrode (8b), wherein the drain electrode (8b) is electrically connected with the pixel electrode (10); a common electrode line (5) disposed in a same layer as the gate electrode (4); and an insulating layer (3) between the gate electrode (4) and the common electrode (2), wherein the common electrode (2) is connected with the common electrode line (5) through a through hole in the insulating layer (3).
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10.发明授权公开(公告)号：US09879343B2
公开(公告)日：2018-01-30
申请号：US14496062
申请日：2014-09-25
发明人： Xiaowei Liu , Yao Liu , Xiangqian Ding , Jinchao Bai
IPC分类号： C23C14/54 , C23C16/52 , C23C2/14 , G01N27/22 , C23C16/455 , C23C16/44 , G01R27/26 , C23C14/56 , H01L21/67 , H01J37/32 , G01B7/06
CPC分类号： C23C16/52 , C23C2/14 , C23C14/545 , C23C14/564 , C23C16/4401 , C23C16/45589 , C23C16/45591 , G01B7/085 , G01B7/105 , G01N27/228 , G01R27/26 , H01J37/32568 , H01L21/67253
摘要： A detection device includes a chamber for vacuum coating, a capacitance measurement device and a baffle mechanism located in the chamber. The baffle mechanism is a closed structure encompassed by a number of baffle walls, wherein at least one baffle wall includes a fixed baffle plate and a moveable baffle plate. The moveable baffle plate is pivotable about the fixed baffle plate. The moveable baffle plate, after pivoting, may get parallel with an adjacent baffle wall. The adjacent baffle wall and the moveable baffle plate are respectively connected to the capacitance measurement device, and the capacitance measurement device is used to measure the capacitance between the adjacent baffle wall and the moveable baffle plate. The detection device may accurately detect the service life of the baffle mechanism and achieve precise management of the apparatus.
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