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1.发明授权Utilizing inverse reactive ion etching lag in double patterning contact formation 失效在双重图案化接触形成中利用反向离子蚀刻滞后公开(公告)号：US07786017B1
公开(公告)日：2010-08-31
申请号：US12561612
申请日：2009-09-17
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/76816
摘要： Solutions for solutions for utilizing Inverse Reactive Ion Etching lag in double patterning contact formation are disclosed. In one embodiment, a method includes providing a CMOS device including: an NMOS device having an NMOS gate and a PMOS device having a PMOS gate; a shallow trench isolation located between the NMOS device and the PMOS device; and an inter-level dielectric located over the NMOS device, the PMOS device and the shallow trench isolation; performing a double-patterning etch process on the CMOS device under conditions causing inverse reactive ion etching lag, the performing including forming a first opening, a second opening and a third opening, the second opening being wider than the first opening, and the third opening being contiguous with the second opening; and forming a first contact in the first opening and forming a second contact in both of the second opening and the third opening.
摘要翻译： 公开了用于在双重图案化接触形成中利用反向离子蚀刻滞后的解决方案。 在一个实施例中，一种方法包括提供CMOS器件，其包括：具有NMOS栅极和PMOS器件的NMOS器件，具有PMOS栅极; 位于NMOS器件和PMOS器件之间的浅沟槽隔离; 以及位于NMOS器件，PMOS器件和浅沟槽隔离之上的级间电介质; 在引起反向离子蚀刻滞后的条件下在CMOS器件上进行双图案化蚀刻工艺，其特征在于包括形成第一开口，第二开口和第三开口，第二开口比第一开口宽，第三开口 与第二个开口连续; 以及在所述第一开口中形成第一触点并且在所述第二开口和所述第三开口中形成第二触点。
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2.发明授权Method for post lithographic critical dimension shrinking using thermal reflow process 失效使用热回流工艺的后平版印刷临界尺寸收缩的方法公开(公告)号：US07494919B2
公开(公告)日：2009-02-24
申请号：US10905579
申请日：2005-01-12
申请人： Colin J. Brodsky , Scott D. Allen
发明人： Colin J. Brodsky , Scott D. Allen
IPC分类号： H01L21/4763
CPC分类号： H01L21/0273 , G03F7/091 , G03F7/40 , H01L21/0276
摘要： A method for reducing the size of a patterned semiconductor feature includes forming a first layer over a substrate to be patterned, and forming a photoresist layer over the first layer. The photoresist layer is patterned so as to expose portions of the first layer, and the exposed portions of the first layer are removed in a manner so as to create an undercut region beneath the patterned photoresist layer. The patterned photoresist layer is reflowed so as to cause reflowed portions of the patterned photoresist layer to occupy at least a portion of the undercut region.
摘要翻译： 用于减小图案化半导体特征的尺寸的方法包括在待图案化的衬底上形成第一层，以及在第一层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以暴露第一层的部分，并且以使得在图案化的光致抗蚀剂层下面形成底切区域的方式去除第一层的暴露部分。 图案化的光致抗蚀剂层被回流以使图案化的光致抗蚀剂层的回流部分占据底切区域的至少一部分。
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3.发明申请STRUCTURE RESULTING FROM CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) 失效BARC（底部防反射涂层）化学收缩过程的结构公开(公告)号：US20120076982A1
公开(公告)日：2012-03-29
申请号：US13311638
申请日：2011-12-06
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/31144 , H01L21/76816 , Y10T428/24322 , Y10T428/24331 , Y10T428/24521 , Y10T428/249953
摘要： A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.
摘要翻译： 一个结构。 该结构包括：孔层; 包括顶孔层表面的孔层，其中所述孔层具有垂直于所述孔层表面的第一方向的厚度; 底部抗反射涂层（BARC）层，其在顶部孔层表面上与孔层直接物理接触; 与BARC层直接物理接触的光致抗蚀剂层，其中第一方向上的连续孔完全穿过光致抗蚀剂层，BARC层和空穴层; 以及在光致抗蚀剂层的侧面与顶层孔表面的光致抗蚀剂层直接物理接触的聚合孔收缩区域，其中，所述孔收缩区域在所述孔层表面的方向 从BARC层到孔层。
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公开(公告)号：US20100173247A1
公开(公告)日：2010-07-08
申请号：US12350250
申请日：2009-01-08
申请人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
发明人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.
摘要翻译： 本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。 在基板上形成平坦化组合物的平坦化层。 平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。 基本平坦的表面与平坦化层接触。 平坦化层通过暴露于第一辐射或通过烘烤而固化。然后去除基本平坦的表面。 在平坦化层上形成光致抗蚀剂层。 将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。 然后将浮雕图像转移到基底中。
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公开(公告)号：US20080286683A1
公开(公告)日：2008-11-20
申请号：US11750026
申请日：2007-05-17
申请人： Colin J. Brodsky , Allen H. Gabor , Javier Perez
发明人： Colin J. Brodsky , Allen H. Gabor , Javier Perez
CPC分类号： G03F7/0035
摘要： A method and a structure. The structure includes: a solid core comprising a first photoresist material, the core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between the top surface and the bottom surface; and a shell comprising a second photoresist material, the shell on the top surface of the substrate, the shell containing a cavity open to the top surface of the substrate, the shell formed over the top surface and the first and second side surfaces walls of the core, the core completely filling the cavity. The core is stiffer than the shell. The method includes: forming the core from a first photoresist layer and forming the shell from a second photoresist layer applied over the core. The core may be cross-linked to increase its stiffness.
摘要翻译： 一种方法和结构。 该结构包括：固体芯，其包括第一光致抗蚀剂材料，所述芯在基底上具有底表面，顶表面以及在顶表面和底表面之间的相对的第一和第二侧表面; 以及壳体，其包括第二光致抗蚀剂材料，所述壳体在所述基板的顶表面上，所述外壳包含通向所述基板的顶表面的空腔，所述外壳形成在所述顶表面上以及所述第一和第二侧表面壁上 核心，核心完全填充空腔。 核心比壳更僵硬。 该方法包括：从第一光致抗蚀剂层形成芯并从施加在芯上的第二光致抗蚀剂层形成壳。 芯可以交联以增加其刚度。
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公开(公告)号：US07354779B2
公开(公告)日：2008-04-08
申请号：US11276707
申请日：2006-03-10
CPC分类号： H01L21/0271 , H01L21/0276
摘要： Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable depth of a film to the wafer, such that the variable depth is modulated based on the local topography of the wafer. The resultant topography of the applied film and wafer is substantially planar (e.g., within approximately 100 nm) across the wafer.
摘要翻译： 公开了在半导体晶片制造工艺中应用地形学补偿膜的方法。 这些过程包括预先处理晶片的表面，以便确定晶片的局部形貌（例如，z-高度），然后将薄膜的可变深度施加到晶片，使得可变深度基于本地 晶圆的形貌。 所施加的膜和晶片的所得形貌在晶片上基本上是平面的（例如在大约100nm内）。
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7.发明授权Method for performing chemical shrink process over BARC (bottom anti-reflective coating) 失效在BARC（底部防反射涂层）上进行化学收缩工艺的方法公开(公告)号：US07288478B2
公开(公告)日：2007-10-30
申请号：US11160670
申请日：2005-07-05
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/31144 , H01L21/76816 , Y10T428/24322 , Y10T428/24331 , Y10T428/24521 , Y10T428/249953
摘要： A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
摘要翻译： 一种结构及其形成方法。 该方法包括提供一种结构，其包括（a）空穴层，（b）在空穴层顶部的BARC（底部抗反射涂层）层，和（c）在BARC层的顶部上的图案化光致抗蚀剂层， 光致抗蚀剂孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层，以在孔层中形成孔。
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公开(公告)号：US07132316B2
公开(公告)日：2006-11-07
申请号：US11029812
申请日：2005-01-05
申请人： Wai-Kin Li , Colin J. Brodsky , Steven A. Scheer
发明人： Wai-Kin Li , Colin J. Brodsky , Steven A. Scheer
IPC分类号： H01L21/00 , H01L21/8238
CPC分类号： G03F7/11 , H01L21/312
摘要： A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.
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公开(公告)号：US08582078B2
公开(公告)日：2013-11-12
申请号：US13098723
申请日：2011-05-02
CPC分类号： G03B27/52 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.
摘要翻译： 通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。 检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。 使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。 掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。 这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。
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公开(公告)号：US08084185B2
公开(公告)日：2011-12-27
申请号：US12350250
申请日：2009-01-08
申请人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
发明人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking. The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.
摘要翻译： 本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。 在基板上形成平坦化组合物的平坦化层。 平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。 基本平坦的表面与平坦化层接触。 平坦化层通过暴露于第一辐射或通过烘烤而固化。 然后去除基本平坦的表面。 在平坦化层上形成光致抗蚀剂层。 将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。 然后将浮雕图像转移到基底中。
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