公开(公告)号：US20050091336A1

公开(公告)日：2005-04-28

申请号：US10676180

申请日：2003-10-01

申请人： Brian DeHamer ,  Peter Johnson

发明人： Brian DeHamer ,  Peter Johnson

IPC分类号： G06F15/16 ,  H04L29/08

CPC分类号： H04L67/02

摘要： The disclosed embodiments relate to a system and method that creates applications. The system comprises a controller generator that is adapted to provide an application with a controller that receives requests for data from users and responds to the requests by obtaining requested data. The system also comprises a cookie management generator that is adapted to prevent conflicting cookie values associated with multiple actions invoking a particular cookie.

摘要翻译： 所公开的实施例涉及创建应用的系统和方法。 该系统包括控制器发生器，其适于向应用提供接收来自用户的数据请求并通过获得所请求的数据来响应请求的控制器。 该系统还包括一个cookie管理生成器，适用于防止与调用特定cookie的多个动作相关联的冲突cookie值。

公开(公告)号：US20050198149A1

公开(公告)日：2005-09-08

申请号：US10765519

申请日：2004-01-27

申请人： Peter Johnson ,  Brian Dehamer

发明人： Peter Johnson ,  Brian Dehamer

IPC分类号： G06F15/16

CPC分类号： H04L12/58 ,  H04L29/06 ,  H04L51/00 ,  H04L51/02 ,  H04L51/04 ,  H04L67/02

摘要： In accordance with at least one embodiment, a system comprising an HTTP gateway which is adapted to establish a communication link with an HTTP server. The system further comprises an instant messaging communication subsystem which is adapted to enable communication between a plurality of instant messaging user interfaces coupled to the instant messaging communication subsystem. The HTTP gateway also establishes a communication link with the instant messaging communication subsystem and receives commands from the instant messaging user interfaces. The received commands are converted to HTTP requests, which are then sent to the HTTP server. The HTTP gateway receives HTTP responses to the HTTP requests from the HTTP server and sends the HTTP responses to the instant messaging user interfaces via the instant messaging communication subsystem.

摘要翻译： 根据至少一个实施例，一种系统包括适于与HTTP服务器建立通信链路的HTTP网关。 该系统还包括即时消息通信子系统，其适于实现耦合到即时消息通信子系统的多个即时消息收发用户界面之间的通信。 HTTP网关还建立与即时消息通信子系统的通信链路并从即时消息用户接口接收命令。 接收到的命令将转换为HTTP请求，然后将其发送到HTTP服务器。 HTTP网关接收来自HTTP服务器的HTTP请求的HTTP响应，并通过即时消息通信子系统将HTTP响应发送到即时消息接发用户界面。

公开(公告)号：US20050050456A1

公开(公告)日：2005-03-03

申请号：US10652469

申请日：2003-08-29

申请人： Brian DeHamer ,  Peter Johnson ,  Sankar Sundaresan ,  Wayne Lee

发明人： Brian DeHamer ,  Peter Johnson ,  Sankar Sundaresan ,  Wayne Lee

IPC分类号： G06F9/44 ,  G06F15/00 ,  G06Q10/00

CPC分类号： G06F8/20 ,  G06Q10/10

摘要： The disclosed embodiments relate to a system and method for creating web applications. The system comprises a controller generator that is adapted to provide a web application with a controller that receives requests for data from a user and responds to the requests by obtaining requested data. The system additionally comprises a web services interface generator that is adapted to provide a web services interface that formats a web service request, communicates the web service request to a web service and processes information received from the web service prior to providing the requested data to the user.

摘要翻译： 所公开的实施例涉及用于创建web应用的系统和方法。 该系统包括控制器生成器，其适于向web应用提供接收来自用户的数据请求并通过获得所请求的数据来响应请求的控制器。 所述系统还包括web服务接口生成器，其适于提供格式化Web服务请求的web服务接口，将Web服务请求传送到web服务，并且在向所述Web服务提供所请求的数据之前处理从web服务接收到的信息 用户。

公开(公告)号：US20160251318A1

公开(公告)日：2016-09-01

申请号：US14241374

申请日：2012-08-28

申请人： Stephen Martin Courtney ,  Michael Prime ,  William Mitchell ,  Christopher John Brown ,  Paula C. De Aguiar Pena ,  Peter Johnson ,  Celia Dominguez ,  Leticia M. Toledo-Sherman ,  Ignacio Munoz

发明人： Stephen Martin Courtney ,  Michael Prime ,  William Mitchell ,  Christopher John Brown ,  Paula C. De Aguiar Pena ,  Peter Johnson ,  Celia Dominguez ,  Leticia M. Toledo-Sherman ,  Ignacio Munoz

IPC分类号： C07D239/28 ,  C07D403/12 ,  C07D405/12 ,  C07D405/14 ,  C07D401/12 ,  C07D405/04 ,  C07D491/048 ,  C07D491/052 ,  C07H13/10 ,  C07D413/04 ,  C07D471/04 ,  C07D409/04 ,  C07D417/04 ,  C07D403/10 ,  C07D405/10 ,  C07D401/04

CPC分类号： C07D239/28 ,  C07D239/42 ,  C07D401/04 ,  C07D401/12 ,  C07D403/04 ,  C07D403/10 ,  C07D403/12 ,  C07D405/04 ,  C07D405/10 ,  C07D405/12 ,  C07D405/14 ,  C07D409/04 ,  C07D413/04 ,  C07D417/04 ,  C07D471/04 ,  C07D491/048 ,  C07D491/052 ,  C07H13/10

摘要： Certain chemical entities are provided herein. Also provided are pharmaceutical compositions comprising at least one chemical entity and one or more pharmaceutically acceptable vehicle. Methods of treating patients suffering from certain diseases and disorders responsive to the inhibition of KMO activity are described, which comprise administering to such patients an amount of at least one chemical entity effective to reduce signs or symptoms of the disease or disorder are disclosed. These diseases include neurodegenerative disorders such as Huntington's disease. Also described are methods of treatment include administering at least one chemical entity as a single active agent or administering at least one chemical entity in combination with one or more other therapeutic agents. Also provided are methods for screening compounds capable of inhibiting KMO activity.

摘要翻译： 本文提供了某些化学实体。 还提供了包含至少一种化学物质和一种或多种药学上可接受的载体的药物组合物。 描述了治疗患有对KMO活性的抑制作用的某些疾病和病症的患者的方法，其包括给予这些患者一定量的至少一种有效减少疾病或病症的体征或症状的化学实​​体。 这些疾病包括神经变性疾病如亨廷顿氏病。 还描述了治疗方法，包括给予至少一种作为单一活性剂的化学实体或与一种或多种其它治疗剂组合施用至少一种化学实体。 还提供了用于筛选能够抑制KMO活性的化合物的方法。

公开(公告)号：US08674418B2

公开(公告)日：2014-03-18

申请号：US13214069

申请日：2011-08-19

申请人： Anindya Poddar ,  Vijaylaxmi Khanolkar ,  Ashok S. Prabhu ,  Peter Johnson

发明人： Anindya Poddar ,  Vijaylaxmi Khanolkar ,  Ashok S. Prabhu ,  Peter Johnson

IPC分类号： H01L31/062 ,  H01L21/70 ,  H01L23/552

CPC分类号： H01F17/0013 ,  H01F27/32 ,  H01F27/36 ,  H01F2017/008

摘要： An inductor device having an improved galvanic isolation layer arranged between a pair of coil and methods of its construction are described.

摘要翻译： 描述了一种具有布置在一对线圈之间的改进的电隔离层和其构造方法的电感器件。

公开(公告)号：US08314676B1

公开(公告)日：2012-11-20

申请号：US13098656

申请日：2011-05-02

申请人： Peter Smeys ,  Andrei Papou ,  Peter Johnson ,  Anuraag Mohan

发明人： Peter Smeys ,  Andrei Papou ,  Peter Johnson ,  Anuraag Mohan

IPC分类号： H01F5/00 ,  H01F7/06 ,  H01L27/08

CPC分类号： H01F17/0033 ,  H01F41/046 ,  Y10T29/4902 ,  Y10T29/49075 ,  Y10T29/49078

摘要： A controlled seam magnetic core lamination utilizable in an inductor structure includes a magnetic base and first and second spaced-apart magnetic sidewalls extending substantially orthogonally from the base to define a seam therebetween. The controlled seam magnetic core lamination is utilizable in an inductor structure that includes: a non-conductive lower mold; a plurality of spaced-apart controlled seam lower laminations formed in the lower mold, each magnetic lower lamination having a horizontal base and first and second spaced-apart sidewalls extending substantially vertically upward from the base to define a seam therebetween; a non-conductive isolation layer formed on the lower mold and the magnetic lower laminations; a conductive trace formed on the isolation layer; a non-conductive upper mold formed over the isolation layer and the conductive trace; and a plurality of spaced-apart controlled seam magnetic upper laminations formed in the upper mold, each magnetic upper lamination having a horizontal base and first and second spaced-apart sidewalls that extend substantially vertically upward from the base to define a seam therebetween.

摘要翻译： 可用于电感器结构的受控接缝磁芯层叠体包括磁性基座和从基座基本正交地延伸的第一和第二隔开的磁性侧壁，以在其间限定接缝。 受控接缝磁芯层叠可用于电感器结构，其包括：非导电下模; 形成在下模具中的多个间隔开的受控接缝下层叠片，每个磁下层层叠件具有水平底座以及从底座基本垂直向上延伸的第一和第二间隔开的侧壁，以在其间限定接缝; 形成在下模具和磁性下层叠板上的非导电隔离层; 形成在隔离层上的导电迹线; 形成在隔离层和导电迹线上的非导电上模; 以及形成在上模具中的多个间隔开的受控接缝磁性上层叠片，每个磁性上层压板具有水平底座和第一和第二隔开的侧壁，其从基座基本上垂直向上延伸以在其间限定接缝。

公开(公告)号：US20120280781A1

公开(公告)日：2012-11-08

申请号：US13098656

申请日：2011-05-02

申请人： Peter Smeys ,  Andrei Papou ,  Peter Johnson ,  Anuraag Mohan

发明人： Peter Smeys ,  Andrei Papou ,  Peter Johnson ,  Anuraag Mohan

IPC分类号： H01F27/24 ,  H01F41/02

CPC分类号： H01F17/0033 ,  H01F41/046 ,  Y10T29/4902 ,  Y10T29/49075 ,  Y10T29/49078

摘要： A controlled seam magnetic core lamination utilizable in an inductor structure includes a magnetic base and first and second spaced-apart magnetic sidewalls extending substantially orthogonally from the base to define a seam therebetween. The controlled seam magnetic core lamination is utilizable in an inductor structure that includes: a non-conductive lower mold; a plurality of spaced-apart controlled seam lower laminations formed in the lower mold, each magnetic lower lamination having a horizontal base and first and second spaced-apart sidewalls extending substantially vertically upward from the base to define a seam therebetween; a non-conductive isolation layer formed on the lower mold and the magnetic lower laminations; a conductive trace formed on the isolation layer; a non-conductive upper mold formed over the isolation layer and the conductive trace; and a plurality of spaced-apart controlled seam magnetic upper laminations formed in the upper mold, each magnetic upper lamination having a horizontal base and first and second spaced-apart sidewalls that extend substantially vertically upward from the base to define a seam therebetween.

摘要翻译： 可用于电感器结构的受控接缝磁芯层叠体包括磁性基座和从基座基本正交地延伸的第一和第二隔开的磁性侧壁，以在其间限定接缝。 受控接缝磁芯层叠可用于电感器结构，其包括：非导电下模; 形成在下模具中的多个间隔开的受控接缝下层叠片，每个磁下层片具有水平底座和第一和第二间隔开的侧壁，从侧面基本垂直向上延伸以在其间限定接缝; 形成在下模具和磁性下层叠板上的非导电隔离层; 形成在隔离层上的导电迹线; 形成在隔离层和导电迹线上的非导电上模; 以及形成在上模具中的多个间隔开的受控接缝磁性上层叠片，每个磁性上层压板具有水平底座和第一和第二隔开的侧壁，其从基座基本上垂直向上延伸以在其间限定接缝。

公开(公告)号：US08222065B1

公开(公告)日：2012-07-17

申请号：US12587139

申请日：2009-10-02

申请人： Peter Smeys ,  Peter Johnson ,  Gokhan Percin

发明人： Peter Smeys ,  Peter Johnson ,  Gokhan Percin

IPC分类号： H01L29/72

CPC分类号： B06B1/0292 ,  H01L27/0688

摘要： A method for forming a capacitive micromachined ultrasonic transducer (CMUT) is provided that includes forming oxide features outwardly of a CMUT control chip in a silicon wafer. The oxide features are planarized. A silicon-on-insulator (SOI) wafer is bonded to the planarized oxide features. For a particular embodiment, the SOI wafer comprises a single crystal epitaxial layer, a buried oxide layer and a silicon layer, and the single crystal epitaxial layer is bonded to the planarized oxide features, after which the silicon layer and the buried oxide layer of the SOI wafer are removed, leaving the single crystal epitaxial layer bonded to the oxide layer.

摘要翻译： 提供一种用于形成电容微加工超声换能器（CMUT）的方法，其包括在硅晶片中的CMUT控制芯片外部形成氧化物特征。 氧化物的特征被平坦化。 绝缘体上硅（SOI）晶片与平坦化的氧化物特征结合。 对于特定实施例，SOI晶片包括单晶外延层，掩埋氧化物层和硅层，并且单晶外延层结合到平坦化的氧化物特征，之后硅层和掩埋氧化物层 去除SOI晶片，留下单晶外延层与氧化物层结合。

公开(公告)号：US20120161294A1

公开(公告)日：2012-06-28

申请号：US12978492

申请日：2010-12-24

申请人： Peter J. Hopper ,  Peter Johnson ,  Peter Smeys ,  William French

发明人： Peter J. Hopper ,  Peter Johnson ,  Peter Smeys ,  William French

IPC分类号： H01L23/48 ,  H01L23/544 ,  H01L21/66

CPC分类号： H01L22/20 ,  H01L22/14 ,  H01L23/5228 ,  H01L23/5252 ,  H01L27/0802 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Multiple wafers that each has multiple high-precision circuits and corresponding trim control circuits are batch trimmed in a process where each wafer is formed to include openings that expose trimmable circuit elements that are internal to the circuitry of the high-precision circuits. The high-precision circuits and trim control circuits are electrically activated during the trimming phase by metal traces that run along the saw streets. The method attaches a wafer contact structure to each wafer to electrically activate the metal traces. The method places the wafers with the wafer contact structures into a solution where the exposed trimmable circuit elements are electroplated or anodized when the actual output voltage of a high-precision circuit does not match the predicted output voltage of the high-precision circuit.

摘要翻译： 在每个晶片被形成为包括暴露高精度电路的电路内部的可调节电路元件的开口的过程中，每个具有多个高精度电路和相应的微调控制电路的多个晶片被批量修整。 高精度电路和微调控制电路在修整阶段通过沿着锯木街道行进的金属轨迹进行电激活。 该方法将晶片接触结构连接到每个晶片以电激活金属迹线。 该方法将具有晶片接触结构的晶片放置在当高精度电路的实际输出电压与高精度电路的预测输出电压不匹配时，暴露的可调节电路元件被电镀或阳极化的解决方案中。

公开(公告)号：US20110260248A1

公开(公告)日：2011-10-27

申请号：US12768295

申请日：2010-04-27

申请人： Peter Smeys ,  Peter Johnson ,  Peter J. Hopper ,  William French

发明人： Peter Smeys ,  Peter Johnson ,  Peter J. Hopper ,  William French

IPC分类号： H01L29/786 ,  H01L21/768

CPC分类号： H01L27/1203 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L23/522 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00

摘要： A silicon-on-insulator (SOI) wafer is formed to have through-the-wafer contacts, and trench based interconnect structures on the back side of the SOI wafer that electrically connect the through-the-wafer contacts. In addition, selected ones of the through-the-wafer contacts bias the bodies of the MOS transistors.

摘要翻译： 形成绝缘体上硅（SOI）晶片以具有贯穿晶片的触点，以及SOI晶片的背侧上的沟槽基互连结构，其电连接晶片间的触点。 此外，通过晶片间接触的选定的一个偏压MOS晶体管的主体。